DE3775379D1 - Nichtfluechtige speicherzellenanordnung. - Google Patents

Nichtfluechtige speicherzellenanordnung.

Info

Publication number
DE3775379D1
DE3775379D1 DE8787905900T DE3775379T DE3775379D1 DE 3775379 D1 DE3775379 D1 DE 3775379D1 DE 8787905900 T DE8787905900 T DE 8787905900T DE 3775379 T DE3775379 T DE 3775379T DE 3775379 D1 DE3775379 D1 DE 3775379D1
Authority
DE
Germany
Prior art keywords
memory cell
volatile memory
cell arrangement
arrangement
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787905900T
Other languages
English (en)
Inventor
David Poeppelman
Alexander Turi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
NCR International Inc
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Application granted granted Critical
Publication of DE3775379D1 publication Critical patent/DE3775379D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE8787905900T 1986-09-22 1987-09-04 Nichtfluechtige speicherzellenanordnung. Expired - Lifetime DE3775379D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/910,053 US4769788A (en) 1986-09-22 1986-09-22 Shared line direct write nonvolatile memory cell array
PCT/US1987/002230 WO1988002174A2 (en) 1986-09-22 1987-09-04 Nonvolatile memory cell array

Publications (1)

Publication Number Publication Date
DE3775379D1 true DE3775379D1 (de) 1992-01-30

Family

ID=25428241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787905900T Expired - Lifetime DE3775379D1 (de) 1986-09-22 1987-09-04 Nichtfluechtige speicherzellenanordnung.

Country Status (5)

Country Link
US (1) US4769788A (de)
EP (1) EP0281597B1 (de)
JP (1) JP2585669B2 (de)
DE (1) DE3775379D1 (de)
WO (1) WO1988002174A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870304A (en) * 1987-12-08 1989-09-26 Cypress Semiconductor Corporation Fast EPROM programmable logic array cell
EP0389693B1 (de) * 1989-03-31 1994-02-16 Koninklijke Philips Electronics N.V. EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht
US5168464A (en) * 1989-11-29 1992-12-01 Ncr Corporation Nonvolatile differential memory device and method
US5313605A (en) * 1990-12-20 1994-05-17 Intel Corporation High bandwith output hierarchical memory store including a cache, fetch buffer and ROM
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2809191C3 (de) * 1978-03-03 1981-10-08 Industrie-Werke Karlsruhe Augsburg Ag, 7500 Karlsruhe Müllfahrzeug mit als Sammelbehälter dienender Drehtrommel
JPS6046554B2 (ja) * 1978-12-14 1985-10-16 株式会社東芝 半導体記憶素子及び記憶回路
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
DE2916884C3 (de) * 1979-04-26 1981-12-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Programmierbare Halbleiterspeicherzelle
JPS5929155B2 (ja) * 1979-11-12 1984-07-18 富士通株式会社 半導体記憶装置
US4387447A (en) * 1980-02-04 1983-06-07 Texas Instruments Incorporated Column and ground select sequence in electrically programmable memory
DE3136517C2 (de) * 1980-09-26 1985-02-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Nichtflüchtige Halbleiter-Speichervorrichtung
JPS6034198B2 (ja) * 1980-11-26 1985-08-07 富士通株式会社 不揮発性メモリ
US4628487A (en) * 1984-08-14 1986-12-09 Texas Instruments Incorporated Dual slope, feedback controlled, EEPROM programming
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
US4683554A (en) * 1985-09-13 1987-07-28 Ncr Corporation Direct write nonvolatile memory cells
US4698900A (en) * 1986-03-27 1987-10-13 Texas Instruments Incorporated Method of making a non-volatile memory having dielectric filled trenches

Also Published As

Publication number Publication date
WO1988002174A2 (en) 1988-03-24
WO1988002174A3 (en) 1988-07-28
US4769788A (en) 1988-09-06
JPH01501023A (ja) 1989-04-06
JP2585669B2 (ja) 1997-02-26
EP0281597A1 (de) 1988-09-14
EP0281597B1 (de) 1991-12-18

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NCR INTERNATIONAL INC., DAYTON, OHIO, US

8328 Change in the person/name/address of the agent

Free format text: KAHLER, K., DIPL.-ING., 8948 MINDELHEIM KAECK, J., DIPL.-ING. DIPL.-WIRTSCH.-ING., 8910 LANDSBERG FIENER, J., PAT.-ANWAELTE, 8948 MINDELHEIM

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN

8327 Change in the person/name/address of the patent owner

Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN

8327 Change in the person/name/address of the patent owner

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR

8327 Change in the person/name/address of the patent owner

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR

8328 Change in the person/name/address of the agent

Free format text: V. BEZOLD & SOZIEN, 80799 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DEL, US