DE3576013D1 - Nichtfluechtiger halbleiterspeicher. - Google Patents

Nichtfluechtiger halbleiterspeicher.

Info

Publication number
DE3576013D1
DE3576013D1 DE8585308245T DE3576013T DE3576013D1 DE 3576013 D1 DE3576013 D1 DE 3576013D1 DE 8585308245 T DE8585308245 T DE 8585308245T DE 3576013 T DE3576013 T DE 3576013T DE 3576013 D1 DE3576013 D1 DE 3576013D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585308245T
Other languages
English (en)
Inventor
Hideki C O Asahi-So Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3576013D1 publication Critical patent/DE3576013D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
DE8585308245T 1984-11-13 1985-11-13 Nichtfluechtiger halbleiterspeicher. Expired - Fee Related DE3576013D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59237435A JPS61117794A (ja) 1984-11-13 1984-11-13 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3576013D1 true DE3576013D1 (de) 1990-03-15

Family

ID=17015313

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585308245T Expired - Fee Related DE3576013D1 (de) 1984-11-13 1985-11-13 Nichtfluechtiger halbleiterspeicher.

Country Status (5)

Country Link
US (1) US5051958A (de)
EP (1) EP0182595B1 (de)
JP (1) JPS61117794A (de)
KR (1) KR920007451B1 (de)
DE (1) DE3576013D1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256296A (ja) * 1986-04-30 1987-11-07 Fujitsu Ltd 半導体不揮発性記憶装置
JPS6478489A (en) * 1987-06-08 1989-03-23 Fujitsu Ltd Nonvolatile memory device
US5189641A (en) * 1987-06-08 1993-02-23 Fujitsu Limited Non-volatile random access memory device
US5212664A (en) * 1989-04-05 1993-05-18 Mitsubishi Denki Kabushiki Kaisha Information card with dual power detection signals to memory decoder
JPH0654873B2 (ja) * 1989-09-04 1994-07-20 株式会社東芝 プログラマブル型論理装置
JP2626160B2 (ja) * 1990-04-27 1997-07-02 日本電気株式会社 半導体メモリ
US5181187A (en) * 1991-03-29 1993-01-19 Silicon Storage Technology, Inc. Low power voltage sensing circuit
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
TW297158B (de) 1994-05-27 1997-02-01 Hitachi Ltd
US5602776A (en) * 1994-10-17 1997-02-11 Simtek Corporation Non-Volatile, static random access memory with current limiting
JP3474665B2 (ja) * 1995-03-02 2003-12-08 富士通株式会社 計算機システムの電源制御装置及び方法
US5566110A (en) * 1995-03-21 1996-10-15 Texas Instruments Incorporated Electrically erasable programmable read only memory and method of operation
US6424011B1 (en) 1997-04-14 2002-07-23 International Business Machines Corporation Mixed memory integration with NVRAM, dram and sram cell structures on same substrate
US5880991A (en) * 1997-04-14 1999-03-09 International Business Machines Corporation Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure
US5923582A (en) * 1997-06-03 1999-07-13 Cypress Semiconductor Corp. SRAM with ROM functionality
US5991191A (en) * 1997-12-05 1999-11-23 Silicon Aquarius, Inc. Methods and circuits for single-memory cell multivalue data storage
KR100260281B1 (ko) * 1997-12-09 2000-07-01 윤덕용 비휘발성 정적 기억소자
TW402843B (en) * 1998-07-08 2000-08-21 Winbond Electronics Corp Voltage sense circuit with low power dissipation
US6452856B1 (en) 1999-02-26 2002-09-17 Micron Technology, Inc. DRAM technology compatible processor/memory chips
IT1313226B1 (it) * 1999-07-02 2002-06-17 St Microelectronics Srl Architettura di memoria avente ridotto valore di settling time deiriferimenti interni di tensione, e relativo metodo di generazione di
US6259126B1 (en) 1999-11-23 2001-07-10 International Business Machines Corporation Low cost mixed memory integration with FERAM
US8072834B2 (en) 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
US20080151654A1 (en) 2006-12-22 2008-06-26 Allan James D Method and apparatus to implement a reset function in a non-volatile static random access memory
US7881118B2 (en) * 2007-05-25 2011-02-01 Cypress Semiconductor Corporation Sense transistor protection for memory programming
US7852699B2 (en) * 2007-10-04 2010-12-14 Macronix International Co., Ltd. Power saving method and circuit thereof for a semiconductor memory
US8064255B2 (en) 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8378425B2 (en) * 2008-01-29 2013-02-19 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757313A (en) * 1972-06-29 1973-09-04 Ibm Data storage with predetermined settable configuration
US4263664A (en) * 1979-08-31 1981-04-21 Xicor, Inc. Nonvolatile static random access memory system
JPS5641585A (en) * 1979-09-07 1981-04-18 Nec Corp Memory
JPS58118091A (ja) * 1981-09-01 1983-07-13 Kino Chikayuki 半導体記憶回路
US4400799A (en) * 1981-09-08 1983-08-23 Intel Corporation Non-volatile memory cell

Also Published As

Publication number Publication date
EP0182595A3 (en) 1987-08-26
EP0182595A2 (de) 1986-05-28
EP0182595B1 (de) 1990-02-07
JPS61117794A (ja) 1986-06-05
US5051958A (en) 1991-09-24
KR920007451B1 (en) 1992-09-01
JPH0411953B2 (de) 1992-03-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee