DE3788645D1 - Sonnenzelle mit verbesserter stirnflächenmetallisierung. - Google Patents
Sonnenzelle mit verbesserter stirnflächenmetallisierung.Info
- Publication number
- DE3788645D1 DE3788645D1 DE87907689T DE3788645T DE3788645D1 DE 3788645 D1 DE3788645 D1 DE 3788645D1 DE 87907689 T DE87907689 T DE 87907689T DE 3788645 T DE3788645 T DE 3788645T DE 3788645 D1 DE3788645 D1 DE 3788645D1
- Authority
- DE
- Germany
- Prior art keywords
- improved face
- face metalization
- sun cell
- sun
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001465 metallisation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/927,282 US4694115A (en) | 1986-11-04 | 1986-11-04 | Solar cell having improved front surface metallization |
PCT/US1987/002426 WO1988003709A1 (en) | 1986-11-04 | 1987-09-25 | Solar cell having improved front surface metallization |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3788645D1 true DE3788645D1 (de) | 1994-02-10 |
DE3788645T2 DE3788645T2 (de) | 1994-04-28 |
Family
ID=25454514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE87907689T Expired - Fee Related DE3788645T2 (de) | 1986-11-04 | 1987-09-25 | Sonnenzelle mit verbesserter stirnflächenmetallisierung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4694115A (de) |
EP (1) | EP0289579B1 (de) |
JP (1) | JPH01501511A (de) |
DE (1) | DE3788645T2 (de) |
WO (1) | WO1988003709A1 (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4694115A (en) * | 1986-11-04 | 1987-09-15 | Spectrolab, Inc. | Solar cell having improved front surface metallization |
US4897123A (en) * | 1987-11-28 | 1990-01-30 | Mitsubishi Denki Kabushiki Kaisha | Solar cells and method for producing solar cells |
US4966437A (en) * | 1988-04-19 | 1990-10-30 | Litton Systems, Inc. | Fault-tolerant anti-reflective coatings |
US5019176A (en) * | 1990-03-20 | 1991-05-28 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Thin solar cell and lightweight array |
US5104899A (en) * | 1990-08-13 | 1992-04-14 | Sepracor, Inc. | Methods and compositions for treating depression using optically pure fluoxetine |
US5215599A (en) * | 1991-05-03 | 1993-06-01 | Electric Power Research Institute | Advanced solar cell |
JP2703673B2 (ja) * | 1991-05-17 | 1998-01-26 | 三菱電機株式会社 | 半導体装置 |
CA2087707A1 (en) * | 1991-06-11 | 1992-12-12 | Fritz Wald | Solar cell and method of making same |
JPH05235388A (ja) * | 1992-02-24 | 1993-09-10 | Mitsubishi Electric Corp | 低抵抗線状パターンの形成方法及び形成装置並びに太陽電池 |
DE4435219C1 (de) * | 1994-09-30 | 1996-01-04 | Siemens Solar Gmbh | Solarzelle und deren Verwendung in einem Solarmodul |
DE19819200B4 (de) | 1998-04-29 | 2006-01-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle mit Kontaktstrukturen und Verfahren zur Herstellung der Kontaktstrukturen |
DE10345736A1 (de) * | 2003-10-01 | 2005-05-04 | Wulf Naegel | Photovoltaikelement |
EP1555695B1 (de) * | 2004-01-13 | 2011-05-04 | Sanyo Electric Co., Ltd. | Photovoltaisches Bauelement |
BRPI0506541A (pt) * | 2004-01-20 | 2007-02-27 | Cyrium Technologies Inc | célula solar com material de ponto quántico epitaxialmente crescido |
US9018515B2 (en) | 2004-01-20 | 2015-04-28 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
DE102006042617B4 (de) * | 2006-09-05 | 2010-04-08 | Q-Cells Se | Verfahren zur Erzeugung von lokalen Kontakten |
US8253010B2 (en) | 2007-11-23 | 2012-08-28 | Big Sun Energy Technology Inc. | Solar cell with two exposed surfaces of ARC layer disposed at different levels |
KR20100135618A (ko) * | 2009-06-17 | 2010-12-27 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
WO2011017659A1 (en) * | 2009-08-06 | 2011-02-10 | Energy Focus, Inc. | Method of passivating and reducing reflectance of a photovoltaic cell |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US8294027B2 (en) * | 2010-01-19 | 2012-10-23 | International Business Machines Corporation | Efficiency in antireflective coating layers for solar cells |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
KR101203623B1 (ko) * | 2010-06-18 | 2012-11-21 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
DE102010017461B4 (de) * | 2010-06-18 | 2013-11-14 | Hanwha Q.CELLS GmbH | Solarzelle, Solarzellenherstellungsverfahren und Prüfverfahren |
US9773928B2 (en) * | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
DE102010048437B4 (de) * | 2010-10-15 | 2014-06-05 | Centrotherm Photovoltaics Ag | Solarzelle mit dielektrischer Rückseitenbeschichtung und Verfahren zu deren Herstellung |
KR20120091629A (ko) * | 2011-02-09 | 2012-08-20 | 엘지전자 주식회사 | 태양전지 |
DE102011017292A1 (de) * | 2011-04-15 | 2012-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vefahren zur Erzeugung einer Metallstruktur zur lokalen elektrischen Kontaktierung einer Halbleiterstruktur |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
AU2013326971B2 (en) | 2012-10-04 | 2016-06-30 | Tesla, Inc. | Photovoltaic devices with electroplated metal grids |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
US20150096615A1 (en) * | 2013-10-04 | 2015-04-09 | Electronics And Telecommunications Research Institute | Solar cell and solar cell module including the same |
KR101519765B1 (ko) * | 2013-12-30 | 2015-05-12 | 현대자동차주식회사 | 무베젤 태양전지 어레이 방법 |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3982964A (en) * | 1975-01-17 | 1976-09-28 | Communications Satellite Corporation (Comsat) | Dotted contact fine geometry solar cell |
US4126930A (en) * | 1975-06-19 | 1978-11-28 | Varian Associates, Inc. | Magnesium doping of AlGaAs |
US4122476A (en) * | 1976-11-22 | 1978-10-24 | International Business Machines Corporation | Semiconductor heterostructure |
US4395583A (en) * | 1980-04-30 | 1983-07-26 | Communications Satellite Corporation | Optimized back contact for solar cells |
US4401840A (en) * | 1981-07-22 | 1983-08-30 | Photowatt International, Inc. | Semicrystalline solar cell |
US4564720A (en) * | 1983-05-13 | 1986-01-14 | The United States Of America As Represented By The United States Department Of Energy | Pure silver ohmic contacts to N- and P- type gallium arsenide materials |
DE3328869A1 (de) * | 1983-08-10 | 1985-02-28 | Nukem Gmbh, 6450 Hanau | Photovoltaische zelle und verfahren zum herstellen dieser |
US4589191A (en) * | 1983-10-20 | 1986-05-20 | Unisearch Limited | Manufacture of high efficiency solar cells |
JPS60157269A (ja) * | 1984-01-26 | 1985-08-17 | Natl Space Dev Agency Japan<Nasda> | GaAs太陽電池およびその製造方法 |
US4694115A (en) * | 1986-11-04 | 1987-09-15 | Spectrolab, Inc. | Solar cell having improved front surface metallization |
-
1986
- 1986-11-04 US US06/927,282 patent/US4694115A/en not_active Expired - Lifetime
-
1987
- 1987-09-25 DE DE87907689T patent/DE3788645T2/de not_active Expired - Fee Related
- 1987-09-25 WO PCT/US1987/002426 patent/WO1988003709A1/en active IP Right Grant
- 1987-09-25 EP EP87907689A patent/EP0289579B1/de not_active Expired - Lifetime
- 1987-09-25 JP JP62507117A patent/JPH01501511A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4694115A (en) | 1987-09-15 |
WO1988003709A1 (en) | 1988-05-19 |
EP0289579A1 (de) | 1988-11-09 |
DE3788645T2 (de) | 1994-04-28 |
EP0289579B1 (de) | 1993-12-29 |
JPH01501511A (ja) | 1989-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |