DE68909732D1 - Photoleitende zelle. - Google Patents
Photoleitende zelle.Info
- Publication number
- DE68909732D1 DE68909732D1 DE89903245T DE68909732T DE68909732D1 DE 68909732 D1 DE68909732 D1 DE 68909732D1 DE 89903245 T DE89903245 T DE 89903245T DE 68909732 T DE68909732 T DE 68909732T DE 68909732 D1 DE68909732 D1 DE 68909732D1
- Authority
- DE
- Germany
- Prior art keywords
- photoconducting
- cell
- photoconducting cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photoreceptors In Electrophotography (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63051891A JP2591031B2 (ja) | 1988-03-04 | 1988-03-04 | 光導電素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68909732D1 true DE68909732D1 (de) | 1993-11-11 |
DE68909732T2 DE68909732T2 (de) | 1994-02-03 |
Family
ID=12899507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89903245T Expired - Fee Related DE68909732T2 (de) | 1988-03-04 | 1989-03-02 | Photoleitende zelle. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5091765A (de) |
EP (1) | EP0364597B1 (de) |
JP (1) | JP2591031B2 (de) |
KR (1) | KR950007487B1 (de) |
DE (1) | DE68909732T2 (de) |
WO (1) | WO1989008329A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69305794T2 (de) * | 1992-07-10 | 1997-06-12 | Asahi Glass Co Ltd | Transparenter, leitfähiger Film und Target und Material zur Gasphasenabscheidung für seine Herstellung |
WO1994008912A2 (en) * | 1992-10-13 | 1994-04-28 | Ushers Inc. | Improved aggregates, and apparatus and method for making same |
US5674802A (en) * | 1992-10-13 | 1997-10-07 | Ushers, Inc. | Shares for catalyst carrier elements, and catalyst apparatuses employing same |
US5441726A (en) * | 1993-04-28 | 1995-08-15 | Sunsmart, Inc. | Topical ultra-violet radiation protectants |
AU6627394A (en) * | 1993-04-28 | 1994-11-21 | Mark Mitchnick | Conductive polymers |
US5391432A (en) * | 1993-04-28 | 1995-02-21 | Mitchnick; Mark | Antistatic fibers |
JPH07316546A (ja) * | 1994-05-23 | 1995-12-05 | Matsushita Electric Ind Co Ltd | 撥水表面構造及びその形成方法 |
AU713540B2 (en) * | 1994-10-25 | 1999-12-02 | Osteonics Corp. | Interlocking structural elements and method for bone repair, augmentation and replacement |
US6649824B1 (en) | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
DE19951207A1 (de) * | 1999-10-15 | 2001-04-19 | Twlux Halbleitertechnologien B | Halbleiterbauelement |
US20070292339A1 (en) * | 2004-03-23 | 2007-12-20 | Kanazawa R And D Ltd. | Iron Oxide Whisker of High Aspect Ratio, Titanium Oxide Whisker of High Aspect Ratio, Structure Containing These and Process for Producing Them |
US7048795B1 (en) | 2005-07-27 | 2006-05-23 | Carty William M | Bonding of cement paste to porcelain shaped articles through the use of ceramic glazes |
US20070269605A1 (en) * | 2006-05-22 | 2007-11-22 | Carty William M | Bonding of cement paste to porcelain bodies through the use of ceramic glazes |
US20070298172A1 (en) * | 2006-06-09 | 2007-12-27 | Carty William M | Tile and substrate bonding system |
USD904725S1 (en) * | 2018-10-05 | 2020-12-08 | Mid-American Gunite, Inc. | Tetrapod |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3420763A (en) * | 1966-05-06 | 1969-01-07 | Bell Telephone Labor Inc | Cathodic sputtering of films of stoichiometric zinc oxide |
US3503029A (en) * | 1968-04-19 | 1970-03-24 | Matsushita Electric Ind Co Ltd | Non-linear resistor |
US3867145A (en) * | 1969-04-05 | 1975-02-18 | Rank Xerox Ltd | Methanol and heat treated zinc oxide |
JPS4830510B1 (de) * | 1969-06-18 | 1973-09-20 | ||
JPS4834492A (de) * | 1971-09-06 | 1973-05-18 | ||
JPS50146345A (de) * | 1974-05-15 | 1975-11-25 | ||
KR920009567B1 (ko) * | 1987-12-29 | 1992-10-19 | 마쯔시다덴기산교 가부시기가이샤 | 산화아연위스커 및 그 제조방법 |
-
1988
- 1988-03-04 JP JP63051891A patent/JP2591031B2/ja not_active Expired - Lifetime
-
1989
- 1989-03-02 EP EP89903245A patent/EP0364597B1/de not_active Expired - Lifetime
- 1989-03-02 DE DE89903245T patent/DE68909732T2/de not_active Expired - Fee Related
- 1989-03-02 WO PCT/JP1989/000216 patent/WO1989008329A1/ja active IP Right Grant
- 1989-03-02 KR KR1019890702035A patent/KR950007487B1/ko not_active IP Right Cessation
-
1991
- 1991-04-03 US US07/680,800 patent/US5091765A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0364597A1 (de) | 1990-04-25 |
US5091765A (en) | 1992-02-25 |
JPH01225375A (ja) | 1989-09-08 |
KR950007487B1 (ko) | 1995-07-11 |
EP0364597B1 (de) | 1993-10-06 |
JP2591031B2 (ja) | 1997-03-19 |
KR900701048A (ko) | 1990-08-17 |
EP0364597A4 (en) | 1990-11-22 |
DE68909732T2 (de) | 1994-02-03 |
WO1989008329A1 (en) | 1989-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |