KR900701048A - 광전노 소자 - Google Patents
광전노 소자Info
- Publication number
- KR900701048A KR900701048A KR1019890702035A KR890702035A KR900701048A KR 900701048 A KR900701048 A KR 900701048A KR 1019890702035 A KR1019890702035 A KR 1019890702035A KR 890702035 A KR890702035 A KR 890702035A KR 900701048 A KR900701048 A KR 900701048A
- Authority
- KR
- South Korea
- Prior art keywords
- whiskey
- zinc oxide
- photoelectric element
- photoconductive device
- acicular
- Prior art date
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 235000015041 whisky Nutrition 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000005054 agglomeration Methods 0.000 claims 1
- 230000002776 aggregation Effects 0.000 claims 1
- 238000000635 electron micrograph Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photoreceptors In Electrophotography (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도와 제 2도는 본 발명의 광전도 소자에 사용되는 산화아연 위스키의 결정구조를 도시한 전자현미경 사진.
제 3도는 본 발명의 광전도 소자의 한 구조를 도시한 평면도.
제 4도는 제 3도 광전도 소자의 단면도,
제 5도는 몇몇 광전도 소자의 저항 변화율을 나타낸 그래프.
Claims (2)
- 코어와 코어로부터 네 다른 방향에서 연장된 침상 결정체도 각각 구성된 사각체형 산화아연 위스키의 응집으로 구성되는 광검출기 구간을 이룸을 특징으로 하는 광전도 소자.
- 제 1항에 있어서, 산화아연 위스키의 침상 결정체의 뿌리 부분에서 직경이 0.7-14㎛이고, 침상결정체의 뿌리에서 첨단부까지의 길이가 3-200㎛임을 특징으로하는 광전도 소자.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88-52891 | 1988-03-04 | ||
JP88-51891 | 1988-03-04 | ||
JP63051891A JP2591031B2 (ja) | 1988-03-04 | 1988-03-04 | 光導電素子 |
PCT/JP1989/000216 WO1989008329A1 (en) | 1988-03-04 | 1989-03-02 | Photoconductive cell |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900701048A true KR900701048A (ko) | 1990-08-17 |
KR950007487B1 KR950007487B1 (ko) | 1995-07-11 |
Family
ID=12899507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890702035A KR950007487B1 (ko) | 1988-03-04 | 1989-03-02 | 광전도 소자 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5091765A (ko) |
EP (1) | EP0364597B1 (ko) |
JP (1) | JP2591031B2 (ko) |
KR (1) | KR950007487B1 (ko) |
DE (1) | DE68909732T2 (ko) |
WO (1) | WO1989008329A1 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69305794T2 (de) * | 1992-07-10 | 1997-06-12 | Asahi Glass Co Ltd | Transparenter, leitfähiger Film und Target und Material zur Gasphasenabscheidung für seine Herstellung |
WO1994008912A2 (en) * | 1992-10-13 | 1994-04-28 | Ushers Inc. | Improved aggregates, and apparatus and method for making same |
US5674802A (en) * | 1992-10-13 | 1997-10-07 | Ushers, Inc. | Shares for catalyst carrier elements, and catalyst apparatuses employing same |
US5441726A (en) * | 1993-04-28 | 1995-08-15 | Sunsmart, Inc. | Topical ultra-violet radiation protectants |
AU6627394A (en) * | 1993-04-28 | 1994-11-21 | Mark Mitchnick | Conductive polymers |
US5391432A (en) * | 1993-04-28 | 1995-02-21 | Mitchnick; Mark | Antistatic fibers |
JPH07316546A (ja) * | 1994-05-23 | 1995-12-05 | Matsushita Electric Ind Co Ltd | 撥水表面構造及びその形成方法 |
AU713540B2 (en) * | 1994-10-25 | 1999-12-02 | Osteonics Corp. | Interlocking structural elements and method for bone repair, augmentation and replacement |
US6649824B1 (en) | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
DE19951207A1 (de) * | 1999-10-15 | 2001-04-19 | Twlux Halbleitertechnologien B | Halbleiterbauelement |
US20070292339A1 (en) * | 2004-03-23 | 2007-12-20 | Kanazawa R And D Ltd. | Iron Oxide Whisker of High Aspect Ratio, Titanium Oxide Whisker of High Aspect Ratio, Structure Containing These and Process for Producing Them |
US7048795B1 (en) | 2005-07-27 | 2006-05-23 | Carty William M | Bonding of cement paste to porcelain shaped articles through the use of ceramic glazes |
US20070269605A1 (en) * | 2006-05-22 | 2007-11-22 | Carty William M | Bonding of cement paste to porcelain bodies through the use of ceramic glazes |
US20070298172A1 (en) * | 2006-06-09 | 2007-12-27 | Carty William M | Tile and substrate bonding system |
USD904725S1 (en) * | 2018-10-05 | 2020-12-08 | Mid-American Gunite, Inc. | Tetrapod |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3420763A (en) * | 1966-05-06 | 1969-01-07 | Bell Telephone Labor Inc | Cathodic sputtering of films of stoichiometric zinc oxide |
US3503029A (en) * | 1968-04-19 | 1970-03-24 | Matsushita Electric Ind Co Ltd | Non-linear resistor |
US3867145A (en) * | 1969-04-05 | 1975-02-18 | Rank Xerox Ltd | Methanol and heat treated zinc oxide |
JPS4830510B1 (ko) * | 1969-06-18 | 1973-09-20 | ||
JPS4834492A (ko) * | 1971-09-06 | 1973-05-18 | ||
JPS50146345A (ko) * | 1974-05-15 | 1975-11-25 | ||
KR920009567B1 (ko) * | 1987-12-29 | 1992-10-19 | 마쯔시다덴기산교 가부시기가이샤 | 산화아연위스커 및 그 제조방법 |
-
1988
- 1988-03-04 JP JP63051891A patent/JP2591031B2/ja not_active Expired - Lifetime
-
1989
- 1989-03-02 EP EP89903245A patent/EP0364597B1/en not_active Expired - Lifetime
- 1989-03-02 DE DE89903245T patent/DE68909732T2/de not_active Expired - Fee Related
- 1989-03-02 WO PCT/JP1989/000216 patent/WO1989008329A1/ja active IP Right Grant
- 1989-03-02 KR KR1019890702035A patent/KR950007487B1/ko not_active IP Right Cessation
-
1991
- 1991-04-03 US US07/680,800 patent/US5091765A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0364597A1 (en) | 1990-04-25 |
US5091765A (en) | 1992-02-25 |
JPH01225375A (ja) | 1989-09-08 |
KR950007487B1 (ko) | 1995-07-11 |
EP0364597B1 (en) | 1993-10-06 |
JP2591031B2 (ja) | 1997-03-19 |
EP0364597A4 (en) | 1990-11-22 |
DE68909732T2 (de) | 1994-02-03 |
DE68909732D1 (de) | 1993-11-11 |
WO1989008329A1 (en) | 1989-09-08 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application | ||
J2X1 | Appeal (before the patent court) |
Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL |
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G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19971230 Year of fee payment: 4 |
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LAPS | Lapse due to unpaid annual fee |