DE69018339D1 - Dynamische Speicheranordnung mit Rampenstruktur ausserhalb der Speicherzellenmatrix. - Google Patents

Dynamische Speicheranordnung mit Rampenstruktur ausserhalb der Speicherzellenmatrix.

Info

Publication number
DE69018339D1
DE69018339D1 DE69018339T DE69018339T DE69018339D1 DE 69018339 D1 DE69018339 D1 DE 69018339D1 DE 69018339 T DE69018339 T DE 69018339T DE 69018339 T DE69018339 T DE 69018339T DE 69018339 D1 DE69018339 D1 DE 69018339D1
Authority
DE
Germany
Prior art keywords
cell matrix
ramp structure
structure outside
memory cell
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69018339T
Other languages
English (en)
Other versions
DE69018339T2 (de
Inventor
Shuichi Ohya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69018339D1 publication Critical patent/DE69018339D1/de
Publication of DE69018339T2 publication Critical patent/DE69018339T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69018339T 1989-08-24 1990-08-22 Dynamische Speicheranordnung mit Rampenstruktur ausserhalb der Speicherzellenmatrix. Expired - Fee Related DE69018339T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1218197A JPH0382077A (ja) 1989-08-24 1989-08-24 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69018339D1 true DE69018339D1 (de) 1995-05-11
DE69018339T2 DE69018339T2 (de) 1995-10-19

Family

ID=16716138

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69018339T Expired - Fee Related DE69018339T2 (de) 1989-08-24 1990-08-22 Dynamische Speicheranordnung mit Rampenstruktur ausserhalb der Speicherzellenmatrix.

Country Status (5)

Country Link
US (1) US5162881A (de)
EP (1) EP0414227B1 (de)
JP (1) JPH0382077A (de)
KR (1) KR930010013B1 (de)
DE (1) DE69018339T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01230081A (ja) * 1988-03-10 1989-09-13 Nec Corp 現像装置
JP2519569B2 (ja) * 1990-04-27 1996-07-31 三菱電機株式会社 半導体記憶装置およびその製造方法
JP2856567B2 (ja) * 1991-05-16 1999-02-10 三菱電機株式会社 半導体装置の製造方法
JP3186084B2 (ja) * 1991-05-24 2001-07-11 日本電気株式会社 半導体メモリー装置
JP3141486B2 (ja) * 1992-01-27 2001-03-05 ソニー株式会社 半導体装置
JP2757733B2 (ja) * 1992-03-25 1998-05-25 松下電器産業株式会社 半導体装置の製造方法
KR960003771B1 (ko) * 1992-08-08 1996-03-22 삼성전자주식회사 반도체 메모리장치
JPH0831575B2 (ja) * 1993-02-12 1996-03-27 日本電気株式会社 半導体記憶装置
JPH06333944A (ja) * 1993-05-25 1994-12-02 Nippondenso Co Ltd 半導体装置
JP2684978B2 (ja) * 1993-11-25 1997-12-03 日本電気株式会社 半導体装置
JP2725577B2 (ja) * 1993-12-01 1998-03-11 日本電気株式会社 半導体装置及びダイナミック形ランダムアクセスメモリ
US5380675A (en) * 1994-03-21 1995-01-10 United Microelectronics Corporation Method for making closely spaced stacked capacitors on DRAM chips
JP2956482B2 (ja) * 1994-07-29 1999-10-04 日本電気株式会社 半導体記憶装置及びその製造方法
US5451537A (en) * 1994-08-12 1995-09-19 Industrial Technology Research Institute Method of forming a DRAM stack capacitor with ladder storage node
JP3616179B2 (ja) * 1995-11-09 2005-02-02 株式会社ルネサステクノロジ 半導体記憶装置
KR100419748B1 (ko) * 1996-09-06 2004-06-04 주식회사 하이닉스반도체 반도체소자의제조방법
GB2323705B (en) * 1997-03-27 2002-02-20 Nec Corp Semiconductor device with memory cell and fabrication method thereof
JPH11121327A (ja) * 1997-10-09 1999-04-30 Nec Corp 半導体装置及びその製造方法
KR100301038B1 (ko) * 1998-03-02 2001-09-06 윤종용 씨오비(cob)를구비한반도체메모리장치및그제조방법
JP3219146B2 (ja) * 1998-10-13 2001-10-15 日本電気株式会社 半導体記憶装置およびその製造方法
KR100555486B1 (ko) * 1999-09-16 2006-03-03 삼성전자주식회사 심한단차가 있는 부분에 층간절연막을 형성하는 방법
US6458706B1 (en) 2000-02-22 2002-10-01 Vanguard International Semiconductor Corporation Method of forming contact using non-conformal dielectric liner

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3856143T2 (de) * 1987-06-17 1998-10-29 Fujitsu Ltd Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff

Also Published As

Publication number Publication date
EP0414227A1 (de) 1991-02-27
EP0414227B1 (de) 1995-04-05
KR910005462A (ko) 1991-03-30
DE69018339T2 (de) 1995-10-19
KR930010013B1 (ko) 1993-10-14
US5162881A (en) 1992-11-10
JPH0382077A (ja) 1991-04-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee