DE3172114D1 - Memory matrix using one-transistor floating gate mos cells - Google Patents

Memory matrix using one-transistor floating gate mos cells

Info

Publication number
DE3172114D1
DE3172114D1 DE8181103816T DE3172114T DE3172114D1 DE 3172114 D1 DE3172114 D1 DE 3172114D1 DE 8181103816 T DE8181103816 T DE 8181103816T DE 3172114 T DE3172114 T DE 3172114T DE 3172114 D1 DE3172114 D1 DE 3172114D1
Authority
DE
Germany
Prior art keywords
floating gate
memory matrix
gate mos
transistor floating
mos cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181103816T
Other languages
German (de)
Inventor
Harish Narandas Kotecha
Francis Walter Wiedman Iii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3172114D1 publication Critical patent/DE3172114D1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7882—Programmable transistors with only two possible levels of programmation charging by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
DE8181103816T 1980-06-18 1981-05-19 Memory matrix using one-transistor floating gate mos cells Expired DE3172114D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/160,530 US4336603A (en) 1980-06-18 1980-06-18 Three terminal electrically erasable programmable read only memory

Publications (1)

Publication Number Publication Date
DE3172114D1 true DE3172114D1 (en) 1985-10-10

Family

ID=22577266

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181103816T Expired DE3172114D1 (en) 1980-06-18 1981-05-19 Memory matrix using one-transistor floating gate mos cells

Country Status (4)

Country Link
US (1) US4336603A (en)
EP (1) EP0042964B1 (en)
JP (1) JPS6016039B2 (en)
DE (1) DE3172114D1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3176810D1 (en) * 1980-12-23 1988-08-18 Fujitsu Ltd Electrically programmable non-volatile semiconductor memory device
US4939559A (en) * 1981-12-14 1990-07-03 International Business Machines Corporation Dual electron injector structures using a conductive oxide between injectors
US4432072A (en) * 1981-12-31 1984-02-14 International Business Machines Corporation Non-volatile dynamic RAM cell
US4446535A (en) * 1981-12-31 1984-05-01 International Business Machines Corporation Non-inverting non-volatile dynamic RAM cell
US4558339A (en) * 1982-03-09 1985-12-10 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
US4417264A (en) * 1982-03-09 1983-11-22 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
US4688078A (en) * 1982-09-30 1987-08-18 Ning Hseih Partially relaxable composite dielectric structure
EP0105802A3 (en) * 1982-09-30 1986-02-26 Fairchild Semiconductor Corporation Programmable read only memory
US4795719A (en) * 1984-05-15 1989-01-03 Waferscale Integration, Inc. Self-aligned split gate eprom process
US4639893A (en) * 1984-05-15 1987-01-27 Wafer Scale Integration, Inc. Self-aligned split gate EPROM
US4868629A (en) * 1984-05-15 1989-09-19 Waferscale Integration, Inc. Self-aligned split gate EPROM
US4729115A (en) * 1984-09-27 1988-03-01 International Business Machines Corporation Non-volatile dynamic random access memory cell
JPS6180866A (en) * 1984-09-27 1986-04-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Non-volatile semiconductor memory cell
US4665417A (en) * 1984-09-27 1987-05-12 International Business Machines Corporation Non-volatile dynamic random access memory cell
IT1213229B (en) * 1984-10-23 1989-12-14 Ates Componenti Elettron MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE.
JPH0721317B2 (en) * 1986-04-16 1995-03-08 本田技研工業株式会社 Front / reverse switching device
US5016215A (en) * 1987-09-30 1991-05-14 Texas Instruments Incorporated High speed EPROM with reverse polarity voltages applied to source and drain regions during reading and writing
FR2650109B1 (en) * 1989-07-20 1993-04-02 Gemplus Card Int INTEGRATED MOS CIRCUIT WITH ADJUSTABLE THRESHOLD VOLTAGE
JPH0426995A (en) * 1990-05-18 1992-01-30 Mitsubishi Electric Corp Nonvolatile semiconductor memory
US5293328A (en) * 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
US5457061A (en) * 1994-07-15 1995-10-10 United Microelectronics Corporation Method of making top floating-gate flash EEPROM structure
US6151248A (en) 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US6103573A (en) 1999-06-30 2000-08-15 Sandisk Corporation Processing techniques for making a dual floating gate EEPROM cell array
US6091633A (en) * 1999-08-09 2000-07-18 Sandisk Corporation Memory array architecture utilizing global bit lines shared by multiple cells
US6512263B1 (en) * 2000-09-22 2003-01-28 Sandisk Corporation Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
US7525149B2 (en) * 2005-08-24 2009-04-28 Micron Technology, Inc. Combined volatile and non-volatile memory device with graded composition insulator stack
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972059A (en) * 1973-12-28 1976-07-27 International Business Machines Corporation Dielectric diode, fabrication thereof, and charge store memory therewith
US3914855A (en) * 1974-05-09 1975-10-28 Bell Telephone Labor Inc Methods for making MOS read-only memories
US4014675A (en) * 1974-12-05 1977-03-29 Hercules Incorporated Fertilizer stick
JPS5223532A (en) * 1975-08-16 1977-02-22 Sato Shinzou Salt bath* electrical heating nitriding of steel subsequent to quenching
US4161039A (en) * 1976-12-15 1979-07-10 Siemens Aktiengesellschaft N-Channel storage FET
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
JPS5927235B2 (en) * 1978-07-14 1984-07-04 井関農機株式会社 Weight sizer saucer tipping device
JPS5642375A (en) * 1979-08-31 1981-04-20 Fujitsu Ltd Semiconductor nonvolatile memory
DE3067881D1 (en) * 1980-02-25 1984-06-20 Ibm Dual electron injector structures

Also Published As

Publication number Publication date
JPS5712488A (en) 1982-01-22
JPS6016039B2 (en) 1985-04-23
US4336603A (en) 1982-06-22
EP0042964A1 (en) 1982-01-06
EP0042964B1 (en) 1985-09-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee