IT1213229B - MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE. - Google Patents

MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE.

Info

Publication number
IT1213229B
IT1213229B IT8423282A IT2328284A IT1213229B IT 1213229 B IT1213229 B IT 1213229B IT 8423282 A IT8423282 A IT 8423282A IT 2328284 A IT2328284 A IT 2328284A IT 1213229 B IT1213229 B IT 1213229B
Authority
IT
Italy
Prior art keywords
memory cell
volatile memory
control
overlapping
floating gate
Prior art date
Application number
IT8423282A
Other languages
Italian (it)
Other versions
IT8423282A0 (en
Inventor
Andrea Ravaglia
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT8423282A priority Critical patent/IT1213229B/en
Publication of IT8423282A0 publication Critical patent/IT8423282A0/en
Priority to GB08524040A priority patent/GB2165991A/en
Priority to NL8502732A priority patent/NL8502732A/en
Priority to DE19853537037 priority patent/DE3537037A1/en
Priority to JP60234660A priority patent/JPS61101079A/en
Priority to FR858515759A priority patent/FR2572211B1/en
Application granted granted Critical
Publication of IT1213229B publication Critical patent/IT1213229B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
IT8423282A 1984-10-23 1984-10-23 MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE. IT1213229B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT8423282A IT1213229B (en) 1984-10-23 1984-10-23 MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE.
GB08524040A GB2165991A (en) 1984-10-23 1985-09-30 Merged nonvolatile memory cell with floating gate superimposed on the control and selection gate
NL8502732A NL8502732A (en) 1984-10-23 1985-10-07 NON-VOLATILE MELTED MEMORY CELL WITH FLOATING GATE SUPERPOSED ON THE CONTROL AND DIAL PORT.
DE19853537037 DE3537037A1 (en) 1984-10-23 1985-10-17 FUSIONED NON-VOLATILE STORAGE CELL
JP60234660A JPS61101079A (en) 1984-10-23 1985-10-22 Merged type non-volatile memory cell having floating gate polymerized on control and selection gates
FR858515759A FR2572211B1 (en) 1984-10-23 1985-10-23 PERMANENT MEMORY CELL OF THE "MERGED" TYPE WITH FLOATING GRID SUPERIMPOSED ON THE CONTROL AND SELECTION GRID

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8423282A IT1213229B (en) 1984-10-23 1984-10-23 MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE.

Publications (2)

Publication Number Publication Date
IT8423282A0 IT8423282A0 (en) 1984-10-23
IT1213229B true IT1213229B (en) 1989-12-14

Family

ID=11205624

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8423282A IT1213229B (en) 1984-10-23 1984-10-23 MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE.

Country Status (6)

Country Link
JP (1) JPS61101079A (en)
DE (1) DE3537037A1 (en)
FR (1) FR2572211B1 (en)
GB (1) GB2165991A (en)
IT (1) IT1213229B (en)
NL (1) NL8502732A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057886A (en) * 1988-12-21 1991-10-15 Texas Instruments Incorporated Non-volatile memory with improved coupling between gates
US5111430A (en) * 1989-06-22 1992-05-05 Nippon Telegraph And Telephone Corporation Non-volatile memory with hot carriers transmitted to floating gate through control gate
TW480715B (en) * 2001-03-06 2002-03-21 Macronix Int Co Ltd Nonvolatile memory structure capable of increasing gate coupling-coefficient

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263684A (en) * 1975-11-20 1977-05-26 Toshiba Corp Non-volatile semiconductor memory device
CA1119299A (en) * 1979-02-05 1982-03-02 Abd-El-Fattah A. Ibrahim Inverse floating gate semiconductor devices
US4336603A (en) * 1980-06-18 1982-06-22 International Business Machines Corp. Three terminal electrically erasable programmable read only memory
JPS5776878A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Semiconductor memory device
US4417264A (en) * 1982-03-09 1983-11-22 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
GB2117177B (en) * 1982-03-09 1985-11-27 Rca Corp An electrically alterable, nonvolatile floating gate memory device
GB2116367B (en) * 1982-03-09 1985-10-02 Rca Corp An electrically alterable, nonvolatile floating gate memory device
JPS59105371A (en) * 1982-12-08 1984-06-18 Hitachi Ltd Non-volatile semiconductor device

Also Published As

Publication number Publication date
DE3537037A1 (en) 1986-04-24
IT8423282A0 (en) 1984-10-23
GB8524040D0 (en) 1985-11-06
JPS61101079A (en) 1986-05-19
GB2165991A (en) 1986-04-23
FR2572211A1 (en) 1986-04-25
NL8502732A (en) 1986-05-16
FR2572211B1 (en) 1991-09-13

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Effective date: 19971030