GB8524040D0 - Merged nonvolatile memory cell - Google Patents

Merged nonvolatile memory cell

Info

Publication number
GB8524040D0
GB8524040D0 GB858524040A GB8524040A GB8524040D0 GB 8524040 D0 GB8524040 D0 GB 8524040D0 GB 858524040 A GB858524040 A GB 858524040A GB 8524040 A GB8524040 A GB 8524040A GB 8524040 D0 GB8524040 D0 GB 8524040D0
Authority
GB
United Kingdom
Prior art keywords
merged
memory cell
nonvolatile memory
nonvolatile
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB858524040A
Other versions
GB2165991A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of GB8524040D0 publication Critical patent/GB8524040D0/en
Publication of GB2165991A publication Critical patent/GB2165991A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
GB08524040A 1984-10-23 1985-09-30 Merged nonvolatile memory cell with floating gate superimposed on the control and selection gate Withdrawn GB2165991A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8423282A IT1213229B (en) 1984-10-23 1984-10-23 MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE.

Publications (2)

Publication Number Publication Date
GB8524040D0 true GB8524040D0 (en) 1985-11-06
GB2165991A GB2165991A (en) 1986-04-23

Family

ID=11205624

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08524040A Withdrawn GB2165991A (en) 1984-10-23 1985-09-30 Merged nonvolatile memory cell with floating gate superimposed on the control and selection gate

Country Status (6)

Country Link
JP (1) JPS61101079A (en)
DE (1) DE3537037A1 (en)
FR (1) FR2572211B1 (en)
GB (1) GB2165991A (en)
IT (1) IT1213229B (en)
NL (1) NL8502732A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057886A (en) * 1988-12-21 1991-10-15 Texas Instruments Incorporated Non-volatile memory with improved coupling between gates
DE4020007C2 (en) * 1989-06-22 1994-09-29 Nippon Telegraph & Telephone Non-volatile memory
TW480715B (en) * 2001-03-06 2002-03-21 Macronix Int Co Ltd Nonvolatile memory structure capable of increasing gate coupling-coefficient

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263684A (en) * 1975-11-20 1977-05-26 Toshiba Corp Non-volatile semiconductor memory device
CA1119299A (en) * 1979-02-05 1982-03-02 Abd-El-Fattah A. Ibrahim Inverse floating gate semiconductor devices
US4336603A (en) * 1980-06-18 1982-06-22 International Business Machines Corp. Three terminal electrically erasable programmable read only memory
JPS5776878A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Semiconductor memory device
GB2116367B (en) * 1982-03-09 1985-10-02 Rca Corp An electrically alterable, nonvolatile floating gate memory device
GB2126788B (en) * 1982-03-09 1985-06-19 Rca Corp An electrically alterable nonvolatile floating gate memory device
GB2117177B (en) * 1982-03-09 1985-11-27 Rca Corp An electrically alterable, nonvolatile floating gate memory device
JPS59105371A (en) * 1982-12-08 1984-06-18 Hitachi Ltd Non-volatile semiconductor device

Also Published As

Publication number Publication date
IT8423282A0 (en) 1984-10-23
JPS61101079A (en) 1986-05-19
DE3537037A1 (en) 1986-04-24
GB2165991A (en) 1986-04-23
NL8502732A (en) 1986-05-16
FR2572211A1 (en) 1986-04-25
FR2572211B1 (en) 1991-09-13
IT1213229B (en) 1989-12-14

Similar Documents

Publication Publication Date Title
EP0311773A3 (en) Non-volatile memory cell
DE3567773D1 (en) Nonvolatile memory cell
DE3279944D1 (en) Two state memory cell
EP0217601A3 (en) Memory cell
EP0180239A3 (en) Content-addressable memory
JPS5730363A (en) Memory cell
GB8322568D0 (en) Nonvolatile memory
EP0202785A3 (en) Nonvolatile electrically alterable memory
DE3176416D1 (en) Electrically alterable read only memory cell
DE3279630D1 (en) Memory cell
JPS56124136A (en) Reversible memory structure
GB2166592B (en) Semiconductor memory array
GB8701867D0 (en) Nonvolatile memory
EP0173523A3 (en) Optical memory
GB8512986D0 (en) Non-volatile memory circuit
EP0048814A3 (en) Non-volatile semiconductor memory cell
JPS5715289A (en) Memory cell
EP0179351A3 (en) Semiconductor memory
EP0186911A3 (en) Reversible memory system
EP0186745A3 (en) Memory array
GB2166313B (en) Improved memory cell
GB8416781D0 (en) Access memory cell
EP0175894A3 (en) Non-volatile semiconductor storage cell
GB2166019B (en) Merged nonvolatile memory cell matrix writing method
GB8700347D0 (en) Memory cell

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)