GB2117177B - An electrically alterable, nonvolatile floating gate memory device - Google Patents

An electrically alterable, nonvolatile floating gate memory device

Info

Publication number
GB2117177B
GB2117177B GB08306290A GB8306290A GB2117177B GB 2117177 B GB2117177 B GB 2117177B GB 08306290 A GB08306290 A GB 08306290A GB 8306290 A GB8306290 A GB 8306290A GB 2117177 B GB2117177 B GB 2117177B
Authority
GB
United Kingdom
Prior art keywords
memory device
floating gate
gate memory
electrically alterable
nonvolatile floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08306290A
Other versions
GB8306290D0 (en
GB2117177A (en
Inventor
Alfred Charles Ipri
Roger Green Stewart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/448,690 external-priority patent/US4513397A/en
Application filed by RCA Corp filed Critical RCA Corp
Priority to GB08306290A priority Critical patent/GB2117177B/en
Publication of GB8306290D0 publication Critical patent/GB8306290D0/en
Publication of GB2117177A publication Critical patent/GB2117177A/en
Application granted granted Critical
Publication of GB2117177B publication Critical patent/GB2117177B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
GB08306290A 1982-03-09 1983-03-08 An electrically alterable, nonvolatile floating gate memory device Expired GB2117177B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08306290A GB2117177B (en) 1982-03-09 1983-03-08 An electrically alterable, nonvolatile floating gate memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB8206909 1982-03-09
US06/448,690 US4513397A (en) 1982-12-10 1982-12-10 Electrically alterable, nonvolatile floating gate memory device
GB08306290A GB2117177B (en) 1982-03-09 1983-03-08 An electrically alterable, nonvolatile floating gate memory device

Publications (3)

Publication Number Publication Date
GB8306290D0 GB8306290D0 (en) 1983-04-13
GB2117177A GB2117177A (en) 1983-10-05
GB2117177B true GB2117177B (en) 1985-11-27

Family

ID=27261505

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08306290A Expired GB2117177B (en) 1982-03-09 1983-03-08 An electrically alterable, nonvolatile floating gate memory device

Country Status (1)

Country Link
GB (1) GB2117177B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1213229B (en) * 1984-10-23 1989-12-14 Ates Componenti Elettron MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728364A (en) * 1980-07-28 1982-02-16 Fujitsu Ltd Semiconductor memory device

Also Published As

Publication number Publication date
GB8306290D0 (en) 1983-04-13
GB2117177A (en) 1983-10-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee