ZA823251B - Alterable threshold semiconductor memory device - Google Patents

Alterable threshold semiconductor memory device

Info

Publication number
ZA823251B
ZA823251B ZA823251A ZA823251A ZA823251B ZA 823251 B ZA823251 B ZA 823251B ZA 823251 A ZA823251 A ZA 823251A ZA 823251 A ZA823251 A ZA 823251A ZA 823251 B ZA823251 B ZA 823251B
Authority
ZA
South Africa
Prior art keywords
memory device
semiconductor memory
threshold semiconductor
alterable threshold
alterable
Prior art date
Application number
ZA823251A
Inventor
James Anthony Topich
Original Assignee
Ncr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncr Co filed Critical Ncr Co
Publication of ZA823251B publication Critical patent/ZA823251B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
ZA823251A 1981-05-11 1982-05-11 Alterable threshold semiconductor memory device ZA823251B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26238081A 1981-05-11 1981-05-11

Publications (1)

Publication Number Publication Date
ZA823251B true ZA823251B (en) 1983-03-30

Family

ID=22997252

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA823251A ZA823251B (en) 1981-05-11 1982-05-11 Alterable threshold semiconductor memory device

Country Status (5)

Country Link
EP (1) EP0078318A4 (en)
JP (1) JPS58500683A (en)
DK (1) DK6283D0 (en)
WO (1) WO1982004162A1 (en)
ZA (1) ZA823251B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143331A (en) * 1983-01-31 1984-08-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor structure
JP2755781B2 (en) * 1990-04-23 1998-05-25 株式会社東芝 Semiconductor memory device and method of manufacturing the same
JPH0548115A (en) * 1991-08-20 1993-02-26 Rohm Co Ltd Nonvolatile semiconductor storage device
JP3635681B2 (en) * 1994-07-15 2005-04-06 ソニー株式会社 Bias circuit adjustment method, charge transfer device, charge detection device, and adjustment method thereof
US6265268B1 (en) * 1999-10-25 2001-07-24 Advanced Micro Devices, Inc. High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
US6528845B1 (en) * 2000-07-14 2003-03-04 Lucent Technologies Inc. Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
US6812517B2 (en) 2002-08-29 2004-11-02 Freescale Semiconductor, Inc. Dielectric storage memory cell having high permittivity top dielectric and method therefor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA942641A (en) * 1970-05-25 1974-02-26 Rca Corporation Semiconductor body of preselected surface potential
JPS49116982A (en) * 1973-12-14 1974-11-08
DE2723738C2 (en) * 1977-05-26 1984-11-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Semiconductor memory cell for the non-volatile storage of electrical charge and method for their programming
US4131902A (en) * 1977-09-30 1978-12-26 Westinghouse Electric Corp. Novel bipolar transistor with a dual-dielectric tunnel emitter
US4249191A (en) * 1978-04-21 1981-02-03 Mcdonnell Douglas Corporation Stripped nitride structure and process therefor
DE2832388C2 (en) * 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of MNOS and MOS transistors in silicon gate technology on a semiconductor substrate
US4242737A (en) * 1978-11-27 1980-12-30 Texas Instruments Incorporated Non-volatile semiconductor memory elements
WO1981000790A1 (en) * 1979-09-13 1981-03-19 Ncr Co Silicon gate non-volatile memory device
DE3032364C2 (en) * 1980-08-28 1987-11-12 Philips Patentverwaltung Gmbh, 2000 Hamburg Electrically programmable semiconductor read-only memory and process for its manufacture

Also Published As

Publication number Publication date
JPS58500683A (en) 1983-04-28
DK6283A (en) 1983-01-10
EP0078318A4 (en) 1983-06-24
DK6283D0 (en) 1983-01-10
EP0078318A1 (en) 1983-05-11
WO1982004162A1 (en) 1982-11-25

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