DK6283D0 - Semiconductor element with variable threshold - Google Patents

Semiconductor element with variable threshold

Info

Publication number
DK6283D0
DK6283D0 DK0062/83A DK6283A DK6283D0 DK 6283 D0 DK6283 D0 DK 6283D0 DK 0062/83 A DK0062/83 A DK 0062/83A DK 6283 A DK6283 A DK 6283A DK 6283 D0 DK6283 D0 DK 6283D0
Authority
DK
Denmark
Prior art keywords
semiconductor element
variable threshold
threshold
variable
semiconductor
Prior art date
Application number
DK0062/83A
Other languages
Danish (da)
Other versions
DK6283A (en
Inventor
James Anthony Topich
Original Assignee
Ncr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncr Co filed Critical Ncr Co
Publication of DK6283A publication Critical patent/DK6283A/en
Publication of DK6283D0 publication Critical patent/DK6283D0/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/792Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DK0062/83A 1981-05-11 1983-01-10 Semiconductor element with variable threshold DK6283D0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26238081A 1981-05-11 1981-05-11
PCT/US1982/000600 WO1982004162A1 (en) 1981-05-11 1982-05-07 Alterable threshold semiconductor memory device

Publications (2)

Publication Number Publication Date
DK6283A DK6283A (en) 1983-01-10
DK6283D0 true DK6283D0 (en) 1983-01-10

Family

ID=22997252

Family Applications (1)

Application Number Title Priority Date Filing Date
DK0062/83A DK6283D0 (en) 1981-05-11 1983-01-10 Semiconductor element with variable threshold

Country Status (5)

Country Link
EP (1) EP0078318A4 (en)
JP (1) JPS58500683A (en)
DK (1) DK6283D0 (en)
WO (1) WO1982004162A1 (en)
ZA (1) ZA823251B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143331A (en) * 1983-01-31 1984-08-16 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Semiconductor structure
JP2755781B2 (en) * 1990-04-23 1998-05-25 株式会社東芝 Semiconductor memory device and method of manufacturing the same
JPH0548115A (en) * 1991-08-20 1993-02-26 Rohm Co Ltd Nonvolatile semiconductor storage device
JP3635681B2 (en) * 1994-07-15 2005-04-06 ソニー株式会社 Bias circuit adjustment method, charge transfer device, charge detection device, and adjustment method thereof
US6265268B1 (en) * 1999-10-25 2001-07-24 Advanced Micro Devices, Inc. High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
US6528845B1 (en) * 2000-07-14 2003-03-04 Lucent Technologies Inc. Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
US6812517B2 (en) 2002-08-29 2004-11-02 Freescale Semiconductor, Inc. Dielectric storage memory cell having high permittivity top dielectric and method therefor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA942641A (en) * 1970-05-25 1974-02-26 Rca Corporation Semiconductor body of preselected surface potential
JPS49116982A (en) * 1973-12-14 1974-11-08
DE2723738C2 (en) * 1977-05-26 1984-11-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Semiconductor memory cell for the non-volatile storage of electrical charge and method for their programming
US4131902A (en) * 1977-09-30 1978-12-26 Westinghouse Electric Corp. Novel bipolar transistor with a dual-dielectric tunnel emitter
US4249191A (en) * 1978-04-21 1981-02-03 Mcdonnell Douglas Corporation Stripped nitride structure and process therefor
DE2832388C2 (en) * 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of MNOS and MOS transistors in silicon gate technology on a semiconductor substrate
US4242737A (en) * 1978-11-27 1980-12-30 Texas Instruments Incorporated Non-volatile semiconductor memory elements
JPS56501146A (en) * 1979-09-13 1981-08-13
DE3032364C2 (en) * 1980-08-28 1987-11-12 Philips Patentverwaltung Gmbh, 2000 Hamburg Electrically programmable semiconductor read-only memory and process for its manufacture

Also Published As

Publication number Publication date
WO1982004162A1 (en) 1982-11-25
EP0078318A4 (en) 1983-06-24
JPS58500683A (en) 1983-04-28
DK6283A (en) 1983-01-10
ZA823251B (en) 1983-03-30
EP0078318A1 (en) 1983-05-11

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