DK6283D0 - Halvlederelement med variabel taerskel - Google Patents

Halvlederelement med variabel taerskel

Info

Publication number
DK6283D0
DK6283D0 DK0062/83A DK6283A DK6283D0 DK 6283 D0 DK6283 D0 DK 6283D0 DK 0062/83 A DK0062/83 A DK 0062/83A DK 6283 A DK6283 A DK 6283A DK 6283 D0 DK6283 D0 DK 6283D0
Authority
DK
Denmark
Prior art keywords
semiconductor element
variable threshold
threshold
variable
semiconductor
Prior art date
Application number
DK0062/83A
Other languages
English (en)
Other versions
DK6283A (da
Inventor
James Anthony Topich
Original Assignee
Ncr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncr Co filed Critical Ncr Co
Publication of DK6283A publication Critical patent/DK6283A/da
Publication of DK6283D0 publication Critical patent/DK6283D0/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
DK0062/83A 1981-05-11 1983-01-10 Halvlederelement med variabel taerskel DK6283D0 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26238081A 1981-05-11 1981-05-11
PCT/US1982/000600 WO1982004162A1 (en) 1981-05-11 1982-05-07 Alterable threshold semiconductor memory device

Publications (2)

Publication Number Publication Date
DK6283A DK6283A (da) 1983-01-10
DK6283D0 true DK6283D0 (da) 1983-01-10

Family

ID=22997252

Family Applications (1)

Application Number Title Priority Date Filing Date
DK0062/83A DK6283D0 (da) 1981-05-11 1983-01-10 Halvlederelement med variabel taerskel

Country Status (5)

Country Link
EP (1) EP0078318A4 (da)
JP (1) JPS58500683A (da)
DK (1) DK6283D0 (da)
WO (1) WO1982004162A1 (da)
ZA (1) ZA823251B (da)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143331A (ja) * 1983-01-31 1984-08-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体構造体
JP2755781B2 (ja) * 1990-04-23 1998-05-25 株式会社東芝 半導体記憶装置およびその製造方法
JPH0548115A (ja) * 1991-08-20 1993-02-26 Rohm Co Ltd 半導体不揮発性記憶装置
JP3635681B2 (ja) 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法
US6265268B1 (en) * 1999-10-25 2001-07-24 Advanced Micro Devices, Inc. High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
US6528845B1 (en) * 2000-07-14 2003-03-04 Lucent Technologies Inc. Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
US6812517B2 (en) 2002-08-29 2004-11-02 Freescale Semiconductor, Inc. Dielectric storage memory cell having high permittivity top dielectric and method therefor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA942641A (en) * 1970-05-25 1974-02-26 Rca Corporation Semiconductor body of preselected surface potential
JPS49116982A (da) * 1973-12-14 1974-11-08
DE2723738C2 (de) * 1977-05-26 1984-11-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung
US4131902A (en) * 1977-09-30 1978-12-26 Westinghouse Electric Corp. Novel bipolar transistor with a dual-dielectric tunnel emitter
US4249191A (en) * 1978-04-21 1981-02-03 Mcdonnell Douglas Corporation Stripped nitride structure and process therefor
DE2832388C2 (de) * 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat
US4242737A (en) * 1978-11-27 1980-12-30 Texas Instruments Incorporated Non-volatile semiconductor memory elements
JPS56501146A (da) * 1979-09-13 1981-08-13
DE3032364C2 (de) * 1980-08-28 1987-11-12 Philips Patentverwaltung Gmbh, 2000 Hamburg Elektrisch programmierbarer Halbleiter-Festwertspeicher und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
DK6283A (da) 1983-01-10
JPS58500683A (ja) 1983-04-28
EP0078318A1 (en) 1983-05-11
WO1982004162A1 (en) 1982-11-25
ZA823251B (en) 1983-03-30
EP0078318A4 (en) 1983-06-24

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