DK6283A - Semiconductor element with variable threshold - Google Patents
Semiconductor element with variable threshold Download PDFInfo
- Publication number
- DK6283A DK6283A DK6283A DK6283A DK6283A DK 6283 A DK6283 A DK 6283A DK 6283 A DK6283 A DK 6283A DK 6283 A DK6283 A DK 6283A DK 6283 A DK6283 A DK 6283A
- Authority
- DK
- Denmark
- Prior art keywords
- semiconductor element
- variable threshold
- threshold
- variable
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26238081A | 1981-05-11 | 1981-05-11 | |
| PCT/US1982/000600 WO1982004162A1 (en) | 1981-05-11 | 1982-05-07 | Alterable threshold semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK6283A true DK6283A (en) | 1983-01-10 |
| DK6283D0 DK6283D0 (en) | 1983-01-10 |
Family
ID=22997252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK0062/83A DK6283D0 (en) | 1981-05-11 | 1983-01-10 | Semiconductor element with variable threshold |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0078318A4 (en) |
| JP (1) | JPS58500683A (en) |
| DK (1) | DK6283D0 (en) |
| WO (1) | WO1982004162A1 (en) |
| ZA (1) | ZA823251B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59143331A (en) * | 1983-01-31 | 1984-08-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Semiconductor structure |
| JP2755781B2 (en) * | 1990-04-23 | 1998-05-25 | 株式会社東芝 | Semiconductor memory device and method of manufacturing the same |
| JPH0548115A (en) * | 1991-08-20 | 1993-02-26 | Rohm Co Ltd | Nonvolatile semiconductor storage device |
| JP3635681B2 (en) * | 1994-07-15 | 2005-04-06 | ソニー株式会社 | Bias circuit adjustment method, charge transfer device, charge detection device, and adjustment method thereof |
| US6265268B1 (en) * | 1999-10-25 | 2001-07-24 | Advanced Micro Devices, Inc. | High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device |
| US6528845B1 (en) * | 2000-07-14 | 2003-03-04 | Lucent Technologies Inc. | Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection |
| US6812517B2 (en) | 2002-08-29 | 2004-11-02 | Freescale Semiconductor, Inc. | Dielectric storage memory cell having high permittivity top dielectric and method therefor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA942641A (en) * | 1970-05-25 | 1974-02-26 | Rca Corporation | Semiconductor body of preselected surface potential |
| JPS49116982A (en) * | 1973-12-14 | 1974-11-08 | ||
| DE2723738C2 (en) * | 1977-05-26 | 1984-11-08 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Semiconductor memory cell for the non-volatile storage of electrical charge and method for their programming |
| US4131902A (en) * | 1977-09-30 | 1978-12-26 | Westinghouse Electric Corp. | Novel bipolar transistor with a dual-dielectric tunnel emitter |
| US4249191A (en) * | 1978-04-21 | 1981-02-03 | Mcdonnell Douglas Corporation | Stripped nitride structure and process therefor |
| DE2832388C2 (en) * | 1978-07-24 | 1986-08-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of MNOS and MOS transistors in silicon gate technology on a semiconductor substrate |
| US4242737A (en) * | 1978-11-27 | 1980-12-30 | Texas Instruments Incorporated | Non-volatile semiconductor memory elements |
| WO1981000790A1 (en) * | 1979-09-13 | 1981-03-19 | Ncr Co | Silicon gate non-volatile memory device |
| DE3032364C2 (en) * | 1980-08-28 | 1987-11-12 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Electrically programmable semiconductor read-only memory and process for its manufacture |
-
1982
- 1982-05-07 EP EP19820901890 patent/EP0078318A4/en not_active Withdrawn
- 1982-05-07 WO PCT/US1982/000600 patent/WO1982004162A1/en not_active Application Discontinuation
- 1982-05-07 JP JP57501921A patent/JPS58500683A/en active Pending
- 1982-05-11 ZA ZA823251A patent/ZA823251B/en unknown
-
1983
- 1983-01-10 DK DK0062/83A patent/DK6283D0/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58500683A (en) | 1983-04-28 |
| EP0078318A4 (en) | 1983-06-24 |
| ZA823251B (en) | 1983-03-30 |
| DK6283D0 (en) | 1983-01-10 |
| EP0078318A1 (en) | 1983-05-11 |
| WO1982004162A1 (en) | 1982-11-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ATS | Application withdrawn |