GB2107541B - Semiconductor integrated memory device - Google Patents

Semiconductor integrated memory device

Info

Publication number
GB2107541B
GB2107541B GB08226488A GB8226488A GB2107541B GB 2107541 B GB2107541 B GB 2107541B GB 08226488 A GB08226488 A GB 08226488A GB 8226488 A GB8226488 A GB 8226488A GB 2107541 B GB2107541 B GB 2107541B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor integrated
integrated memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08226488A
Other versions
GB2107541A (en
Inventor
Yuuji Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2107541A publication Critical patent/GB2107541A/en
Application granted granted Critical
Publication of GB2107541B publication Critical patent/GB2107541B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
GB08226488A 1981-09-28 1982-09-17 Semiconductor integrated memory device Expired GB2107541B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56153366A JPS5856288A (en) 1981-09-28 1981-09-28 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
GB2107541A GB2107541A (en) 1983-04-27
GB2107541B true GB2107541B (en) 1985-02-20

Family

ID=15560877

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08226488A Expired GB2107541B (en) 1981-09-28 1982-09-17 Semiconductor integrated memory device

Country Status (3)

Country Link
JP (1) JPS5856288A (en)
DE (1) DE3235480C2 (en)
GB (1) GB2107541B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0646650B2 (en) * 1983-09-12 1994-06-15 株式会社東芝 Semiconductor memory device
JPH01273291A (en) * 1988-04-25 1989-11-01 Nec Corp Static memory integrated circuit
DE69727581D1 (en) 1997-11-28 2004-03-18 St Microelectronics Srl RAM memory cell with low power consumption
FR2835945A1 (en) 2002-02-11 2003-08-15 St Microelectronics Sa EXTRACTION OF A BINARY CODE FROM PHYSICAL PARAMETERS OF AN INTEGRATED CIRCUIT

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS532549B2 (en) * 1973-11-07 1978-01-28
DE2947311C2 (en) * 1978-11-24 1982-04-01 Hitachi, Ltd., Tokyo Integrated semiconductor circuit
JPS57117182A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor integrated circuit
JPS57162181A (en) * 1981-03-31 1982-10-05 Fujitsu Ltd Semiconductor memory device

Also Published As

Publication number Publication date
DE3235480C2 (en) 1986-05-22
JPS5856288A (en) 1983-04-02
DE3235480A1 (en) 1983-04-14
GB2107541A (en) 1983-04-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980917