GB2166019B - Merged nonvolatile memory cell matrix writing method - Google Patents

Merged nonvolatile memory cell matrix writing method

Info

Publication number
GB2166019B
GB2166019B GB8524039A GB8524039A GB2166019B GB 2166019 B GB2166019 B GB 2166019B GB 8524039 A GB8524039 A GB 8524039A GB 8524039 A GB8524039 A GB 8524039A GB 2166019 B GB2166019 B GB 2166019B
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
matrix
nonvolatile
method
memory
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8524039A
Other versions
GB2166019A (en )
GB8524039D0 (en )
Inventor
Andrea Ravaglia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SGS Microelettronica SpA
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
GB8524039A 1984-10-23 1985-09-30 Merged nonvolatile memory cell matrix writing method Expired GB2166019B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
IT2328184 1984-10-23

Publications (3)

Publication Number Publication Date
GB8524039D0 GB8524039D0 (en) 1985-11-06
GB2166019A true GB2166019A (en) 1986-04-23
GB2166019B true GB2166019B (en) 1988-06-02

Family

ID=11205614

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8524039A Expired GB2166019B (en) 1984-10-23 1985-09-30 Merged nonvolatile memory cell matrix writing method

Country Status (5)

Country Link
JP (1) JPS6199997A (en)
DE (1) DE3537046A1 (en)
FR (1) FR2572212B1 (en)
GB (1) GB2166019B (en)
NL (1) NL8502731A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783766A (en) * 1986-05-30 1988-11-08 Seeq Technology, Inc. Block electrically erasable EEPROM
JPH0770233B2 (en) * 1987-07-15 1995-07-31 三菱電機株式会社 Writing and erasing method for a nonvolatile semiconductor memory device
JPS6439694A (en) * 1987-08-05 1989-02-09 Mitsubishi Electric Corp Non-volatile semiconductor memory device
JPH01289170A (en) * 1988-05-16 1989-11-21 Toshiba Corp Non-volatile semiconductor storage device
JP2732070B2 (en) * 1988-07-12 1998-03-25 三菱電機株式会社 Writing method for a nonvolatile semiconductor memory device
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377857A (en) * 1980-11-18 1983-03-22 Fairchild Camera & Instrument Electrically erasable programmable read-only memory
DE3279855D1 (en) * 1981-12-29 1989-09-07 Fujitsu Ltd Nonvolatile semiconductor memory circuit

Also Published As

Publication number Publication date Type
FR2572212A1 (en) 1986-04-25 application
GB2166019A (en) 1986-04-23 application
GB8524039D0 (en) 1985-11-06 grant
NL8502731A (en) 1986-05-16 application
JPS6199997A (en) 1986-05-19 application
FR2572212B1 (en) 1989-05-19 grant
DE3537046A1 (en) 1986-04-24 application

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030930