JPS5223532A - Salt bath* electrical heating nitriding of steel subsequent to quenching - Google Patents
Salt bath* electrical heating nitriding of steel subsequent to quenchingInfo
- Publication number
- JPS5223532A JPS5223532A JP9966875A JP9966875A JPS5223532A JP S5223532 A JPS5223532 A JP S5223532A JP 9966875 A JP9966875 A JP 9966875A JP 9966875 A JP9966875 A JP 9966875A JP S5223532 A JPS5223532 A JP S5223532A
- Authority
- JP
- Japan
- Prior art keywords
- quenching
- electrical heating
- salt bath
- heating nitriding
- steel subsequent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9966875A JPS5223532A (en) | 1975-08-16 | 1975-08-16 | Salt bath* electrical heating nitriding of steel subsequent to quenching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9966875A JPS5223532A (en) | 1975-08-16 | 1975-08-16 | Salt bath* electrical heating nitriding of steel subsequent to quenching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5223532A true JPS5223532A (en) | 1977-02-22 |
Family
ID=14253401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9966875A Pending JPS5223532A (en) | 1975-08-16 | 1975-08-16 | Salt bath* electrical heating nitriding of steel subsequent to quenching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5223532A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5712488A (en) * | 1980-06-18 | 1982-01-22 | Ibm | Non-volatile cell circuit |
US6424008B1 (en) | 1992-10-30 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Memory device having a floating gate |
US7692232B2 (en) | 2006-03-21 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
US7723773B2 (en) | 2006-02-10 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd | Nonvolatile semiconductor storage device and manufacturing method thereof |
US7760552B2 (en) | 2006-03-31 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Verification method for nonvolatile semiconductor memory device |
US7786526B2 (en) | 2006-03-31 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
US7842992B2 (en) | 2006-03-31 | 2010-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device having floating gate that includes two layers |
US8022460B2 (en) | 2006-03-31 | 2011-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
US8212302B2 (en) | 2006-03-21 | 2012-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
US8227863B2 (en) | 2006-03-21 | 2012-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
-
1975
- 1975-08-16 JP JP9966875A patent/JPS5223532A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6016039B2 (en) * | 1980-06-18 | 1985-04-23 | インタ−ナシヨナル・ビジスネ・マシ−ンズ・コ−ポレ−シヨン | non-volatile cell circuit |
JPS5712488A (en) * | 1980-06-18 | 1982-01-22 | Ibm | Non-volatile cell circuit |
US6424008B1 (en) | 1992-10-30 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Memory device having a floating gate |
US7622343B2 (en) | 1992-10-30 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same |
US7723773B2 (en) | 2006-02-10 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd | Nonvolatile semiconductor storage device and manufacturing method thereof |
US8338257B2 (en) | 2006-02-10 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor storage device and manufacturing method thereof |
US8212302B2 (en) | 2006-03-21 | 2012-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
US7692232B2 (en) | 2006-03-21 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
US8227863B2 (en) | 2006-03-21 | 2012-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
US7760552B2 (en) | 2006-03-31 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Verification method for nonvolatile semiconductor memory device |
US8022460B2 (en) | 2006-03-31 | 2011-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
US8018776B2 (en) | 2006-03-31 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Verification method for nonvolatile semiconductor memory device |
US7842992B2 (en) | 2006-03-31 | 2010-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device having floating gate that includes two layers |
US7786526B2 (en) | 2006-03-31 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
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