ITMI20042538A1 - Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli - Google Patents

Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli

Info

Publication number
ITMI20042538A1
ITMI20042538A1 IT002538A ITMI20042538A ITMI20042538A1 IT MI20042538 A1 ITMI20042538 A1 IT MI20042538A1 IT 002538 A IT002538 A IT 002538A IT MI20042538 A ITMI20042538 A IT MI20042538A IT MI20042538 A1 ITMI20042538 A1 IT MI20042538A1
Authority
IT
Italy
Prior art keywords
writing
soft
reduction
flash memory
multiple levels
Prior art date
Application number
IT002538A
Other languages
English (en)
Inventor
Simone Bartoli
Lorenzo Bedarida
Giorgio Oddone
Caser Fabio Tassan
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to IT002538A priority Critical patent/ITMI20042538A1/it
Publication of ITMI20042538A1 publication Critical patent/ITMI20042538A1/it
Priority to US11/144,174 priority patent/US7522455B2/en
Priority to EP05855037A priority patent/EP1839312A2/en
Priority to CNA2005800449895A priority patent/CN101091220A/zh
Priority to PCT/US2005/046412 priority patent/WO2006071686A2/en
Priority to TW094145794A priority patent/TW200629293A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
IT002538A 2004-12-29 2004-12-29 Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli ITMI20042538A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT002538A ITMI20042538A1 (it) 2004-12-29 2004-12-29 Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli
US11/144,174 US7522455B2 (en) 2004-12-29 2005-06-02 Method and system for reducing soft-writing in a multi-level flash memory
EP05855037A EP1839312A2 (en) 2004-12-29 2005-12-20 Method and system for reducing soft-writing in a multi-level flash memory
CNA2005800449895A CN101091220A (zh) 2004-12-29 2005-12-20 减少多层快闪存储器中软写的方法和系统
PCT/US2005/046412 WO2006071686A2 (en) 2004-12-29 2005-12-20 Method and system for reducing soft-writing in a multi-level flash memory
TW094145794A TW200629293A (en) 2004-12-29 2005-12-22 Method and system for reducing soft-writing in a multi-level flash memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002538A ITMI20042538A1 (it) 2004-12-29 2004-12-29 Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli

Publications (1)

Publication Number Publication Date
ITMI20042538A1 true ITMI20042538A1 (it) 2005-03-29

Family

ID=36611308

Family Applications (1)

Application Number Title Priority Date Filing Date
IT002538A ITMI20042538A1 (it) 2004-12-29 2004-12-29 Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli

Country Status (4)

Country Link
US (1) US7522455B2 (it)
CN (1) CN101091220A (it)
IT (1) ITMI20042538A1 (it)
TW (1) TW200629293A (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7414891B2 (en) 2007-01-04 2008-08-19 Atmel Corporation Erase verify method for NAND-type flash memories
US7882405B2 (en) * 2007-02-16 2011-02-01 Atmel Corporation Embedded architecture with serial interface for testing flash memories
US20080232169A1 (en) * 2007-03-20 2008-09-25 Atmel Corporation Nand-like memory array employing high-density nor-like memory devices
US7966546B2 (en) * 2007-03-31 2011-06-21 Sandisk Technologies Inc. Non-volatile memory with soft bit data transmission for error correction control
US7975209B2 (en) * 2007-03-31 2011-07-05 Sandisk Technologies Inc. Non-volatile memory with guided simulated annealing error correction control
US7971127B2 (en) * 2007-03-31 2011-06-28 Sandisk Technologies Inc. Guided simulated annealing in non-volatile memory error correction control
US7966550B2 (en) * 2007-03-31 2011-06-21 Sandisk Technologies Inc. Soft bit data transmission for error correction control in non-volatile memory
WO2008121577A1 (en) * 2007-03-31 2008-10-09 Sandisk Corporation Soft bit data transmission for error correction control in non-volatile memory
US8374029B2 (en) * 2011-03-15 2013-02-12 Texas Instruments Incorporated Electrically addressed non-volatile memory maintentance
US10468096B2 (en) 2012-10-15 2019-11-05 Seagate Technology Llc Accelerated soft read for multi-level cell nonvolatile memories
CN106558345A (zh) * 2015-09-25 2017-04-05 北京兆易创新科技股份有限公司 一种基于电流比较的位扫描方法和系统

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0136119B1 (en) 1983-09-16 1988-06-29 Fujitsu Limited Plural-bit-per-cell read-only memory
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5293560A (en) 1988-06-08 1994-03-08 Eliyahou Harari Multi-state flash EEPROM system using incremental programing and erasing methods
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
DE69031276T2 (de) 1989-06-12 1998-01-15 Toshiba Kawasaki Kk Halbleiterspeicheranordnung
IT1246241B (it) 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
US5153880A (en) 1990-03-12 1992-10-06 Xicor, Inc. Field-programmable redundancy apparatus for memory arrays
JP3454520B2 (ja) 1990-11-30 2003-10-06 インテル・コーポレーション フラッシュ記憶装置の書込み状態を確認する回路及びその方法
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5602789A (en) 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
KR960002006B1 (ko) 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
US5142496A (en) 1991-06-03 1992-08-25 Advanced Micro Devices, Inc. Method for measuring VT 's less than zero without applying negative voltages
US5420822A (en) 1992-03-31 1995-05-30 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US5657332A (en) 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5339272A (en) 1992-12-21 1994-08-16 Intel Corporation Precision voltage reference
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US5422842A (en) 1993-07-08 1995-06-06 Sundisk Corporation Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells
US5608676A (en) 1993-08-31 1997-03-04 Crystal Semiconductor Corporation Current limited current reference for non-volatile memory sensing
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5440505A (en) 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
AU2593595A (en) 1994-06-02 1996-01-04 Intel Corporation Sensing schemes for flash memory with multilevel cells
US5608679A (en) 1994-06-02 1997-03-04 Intel Corporation Fast internal reference cell trimming for flash EEPROM memory
US5523972A (en) 1994-06-02 1996-06-04 Intel Corporation Method and apparatus for verifying the programming of multi-level flash EEPROM memory
US5539690A (en) 1994-06-02 1996-07-23 Intel Corporation Write verify schemes for flash memory with multilevel cells
US5694356A (en) 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
GB9423034D0 (en) 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A reference circuit
US5684739A (en) 1994-11-30 1997-11-04 Nkk Corporation Apparatus and method for determining current or voltage of a semiconductor device
JP3336813B2 (ja) 1995-02-01 2002-10-21 ソニー株式会社 不揮発性半導体メモリ装置
US5513144A (en) 1995-02-13 1996-04-30 Micron Technology, Inc. On-chip memory redundancy circuitry for programmable non-volatile memories, and methods for programming same
DE69514783T2 (de) * 1995-03-23 2000-06-08 Stmicroelectronics S.R.L., Agrate Brianza Leseschaltung für serielle dichotomische Abfühlung von mehrschichtigen nichtflüchtigen Speicherzellen
EP0735542A1 (en) 1995-03-31 1996-10-02 STMicroelectronics S.r.l. Reading circuit for multilevel non-volatile memory cell devices
US5621686A (en) 1995-06-07 1997-04-15 Intel Corporation Multiply and divide current mirror
US5627784A (en) 1995-07-28 1997-05-06 Micron Quantum Devices, Inc. Memory system having non-volatile data storage structure for memory control parameters and method
DE69516402T2 (de) 1995-07-31 2000-11-02 Stmicroelectronics S.R.L., Agrate Brianza Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens
US5687114A (en) 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
KR0172401B1 (ko) 1995-12-07 1999-03-30 김광호 다수상태 불휘발성 반도체 메모리 장치
US5729489A (en) 1995-12-14 1998-03-17 Intel Corporation Programming flash memory using predictive learning methods
US5673224A (en) 1996-02-23 1997-09-30 Micron Quantum Devices, Inc. Segmented non-volatile memory array with multiple sources with improved word line control circuitry
US5737260A (en) 1996-03-27 1998-04-07 Sharp Kabushiki Kaisha Dual mode ferroelectric memory reference scheme
US5638326A (en) 1996-04-05 1997-06-10 Advanced Micro Devices, Inc. Parallel page buffer verify or read of cells on a word line using a signal from a reference cell in a flash memory device
US5781486A (en) 1996-04-16 1998-07-14 Micron Technology Corporation Apparatus for testing redundant elements in a packaged semiconductor memory device
US5694366A (en) 1996-05-01 1997-12-02 Micron Quantum Devices, Inc. OP amp circuit with variable resistance and memory system including same
US5764568A (en) 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
US5790453A (en) 1996-10-24 1998-08-04 Micron Quantum Devices, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
US5771346A (en) 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
US5768287A (en) 1996-10-24 1998-06-16 Micron Quantum Devices, Inc. Apparatus and method for programming multistate memory device
US6078518A (en) 1998-02-25 2000-06-20 Micron Technology, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
JP3159105B2 (ja) 1997-02-21 2001-04-23 日本電気株式会社 不揮発性半導体記憶装置及びその書込方法
JPH10302482A (ja) 1997-02-27 1998-11-13 Sanyo Electric Co Ltd 半導体メモリ
US6567302B2 (en) 1998-12-29 2003-05-20 Micron Technology, Inc. Method and apparatus for programming multi-state cells in a memory device
US6178114B1 (en) * 1999-01-12 2001-01-23 Macronix International Co., Ltd. Sensing apparatus and method for fetching multi-level cell data
CA2273122A1 (en) 1999-05-26 2000-11-26 Gershom Birk Multilevel dram with local reference generation
IT1318892B1 (it) 2000-09-15 2003-09-19 St Microelectronics Srl Circuito di lettura per memorie non volatili a semiconduttore.
EP1193715A1 (en) 2000-09-20 2002-04-03 STMicroelectronics S.r.l. Nonvolatile memory device, having parts with different access time, reliability and capacity
EP1211812B1 (en) 2000-10-31 2006-11-15 STMicroelectronics S.r.l. A/D conversion method in high density multilevel non-volatile memory devices and corresponding converter device
US6483743B1 (en) 2001-06-18 2002-11-19 Intel Corporation Multilevel cell memory architecture
KR100390959B1 (ko) * 2001-06-29 2003-07-12 주식회사 하이닉스반도체 센싱회로를 이용한 멀티레벨 플래시 메모리 프로그램/리드방법
TW533428B (en) 2001-11-29 2003-05-21 Elan Microelectronics Corp Multi-state memory sensing amplifier
US6937520B2 (en) * 2004-01-21 2005-08-30 Tsuyoshi Ono Nonvolatile semiconductor memory device
US7023734B2 (en) * 2004-03-03 2006-04-04 Elite Semiconductor Memory Technology, Inc. Overerase correction in flash EEPROM memory

Also Published As

Publication number Publication date
TW200629293A (en) 2006-08-16
US7522455B2 (en) 2009-04-21
US20060140010A1 (en) 2006-06-29
CN101091220A (zh) 2007-12-19

Similar Documents

Publication Publication Date Title
GB2432444B (en) Flash memory device and word line enable method thereof
ITMI20050063A1 (it) Metodo e sistema per la gestione di una richiesta di sospensione in una memoria flash
GB2459802B (en) Memory management method and information processing device implementing the method
ITMI20051835A1 (it) Un metodo e sistema per la gestione del rischio
IL226581B (en) System and methods for use in lightning detection
ZA200803637B (en) Data management method in flash memory medium
TWI370359B (en) Method and system for non-volatile memory performance improvement
DE602004011467D1 (de) Speichersteuerungssystem und -verfahren
DE602005017731D1 (de) Speichersystem und Speicherverwaltungsverfahren
ITMI20050799A1 (it) Metodo e sistema di configurazione dei parametri per una memoria flash
DE602007013327D1 (de) Halbleiterspeicher und -system
GB2427731B (en) Non-volatile semiconductor device and method for automatically recovering erase failure in the device
EP2040292A4 (en) NON-VOLATILE SEMICONDUCTOR MEMORY AND DRIVING METHOD THEREOF
NO20054799D0 (no) System og fremgangsmater for oppbevaring av fisk
GB0701431D0 (en) Method for initializing non-volatile storage device, and non-volatile storage device
DE602005018561D1 (de) Halbleiterspeicherbauelement und dessen Herstellungsverfahren
DE602007009007D1 (de) Halbleiterspeicher und -system
NL1028888A1 (nl) Inrichting voor ontvlechten en werkwijze met gebruikmaking van gedetecteerde lijnbibber.
DE602004007884D1 (de) Speichersteuerungssystem und -Verfahren
EP2043145A4 (en) NON-VOLATILE SEMICONDUCTOR MEMORY AND CORRESPONDING DRIVE METHOD
ITMI20042538A1 (it) Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli
ATA4292004A (de) Automatisches tablettenabfüllverfahren und -system
GB0621481D0 (en) Methods and apparatus for wordline protection in flash memory devices
ITMI20041957A1 (it) Dispositivo di memoria
FI20045505A0 (fi) Laitteen muistiin tallennettavan tiedon suojaaminen