IT1204375B - Generatore di polarizzazione di sorgenti per transistori naturali in circuiti integrati digitali in tecnologia mos - Google Patents

Generatore di polarizzazione di sorgenti per transistori naturali in circuiti integrati digitali in tecnologia mos

Info

Publication number
IT1204375B
IT1204375B IT20660/86A IT2066086A IT1204375B IT 1204375 B IT1204375 B IT 1204375B IT 20660/86 A IT20660/86 A IT 20660/86A IT 2066086 A IT2066086 A IT 2066086A IT 1204375 B IT1204375 B IT 1204375B
Authority
IT
Italy
Prior art keywords
integrated circuits
source generator
digital integrated
mos technology
polarization source
Prior art date
Application number
IT20660/86A
Other languages
English (en)
Other versions
IT8620660A0 (it
Inventor
Giovanni Campardo
David Novosel
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT20660/86A priority Critical patent/IT1204375B/it
Publication of IT8620660A0 publication Critical patent/IT8620660A0/it
Priority to DE3717758A priority patent/DE3717758C2/de
Priority to JP13477987A priority patent/JP2579943B2/ja
Priority to US07/056,866 priority patent/US4800297A/en
Application granted granted Critical
Publication of IT1204375B publication Critical patent/IT1204375B/it

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Electronic Switches (AREA)
  • Control Of Electrical Variables (AREA)
IT20660/86A 1986-06-03 1986-06-03 Generatore di polarizzazione di sorgenti per transistori naturali in circuiti integrati digitali in tecnologia mos IT1204375B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT20660/86A IT1204375B (it) 1986-06-03 1986-06-03 Generatore di polarizzazione di sorgenti per transistori naturali in circuiti integrati digitali in tecnologia mos
DE3717758A DE3717758C2 (de) 1986-06-03 1987-05-26 Sourcevorspannungsgenerator für Transistoren mit geringer Schwellwertspannung in digitalen integrierten MOS-Schaltungen
JP13477987A JP2579943B2 (ja) 1986-06-03 1987-05-29 ソ−スバイアス電圧発生装置
US07/056,866 US4800297A (en) 1986-06-03 1987-06-01 Source bias generator for natural transistors in MOS digital integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20660/86A IT1204375B (it) 1986-06-03 1986-06-03 Generatore di polarizzazione di sorgenti per transistori naturali in circuiti integrati digitali in tecnologia mos

Publications (2)

Publication Number Publication Date
IT8620660A0 IT8620660A0 (it) 1986-06-03
IT1204375B true IT1204375B (it) 1989-03-01

Family

ID=11170193

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20660/86A IT1204375B (it) 1986-06-03 1986-06-03 Generatore di polarizzazione di sorgenti per transistori naturali in circuiti integrati digitali in tecnologia mos

Country Status (4)

Country Link
US (1) US4800297A (it)
JP (1) JP2579943B2 (it)
DE (1) DE3717758C2 (it)
IT (1) IT1204375B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910007740B1 (ko) * 1989-05-02 1991-09-30 삼성전자 주식회사 비트라인 안정화를 위한 전원전압 추적회로
US5056063A (en) * 1990-05-29 1991-10-08 Texas Instruments Incorporated Active sense amplifier with dynamic pre-charge transistor
IT1244293B (it) * 1990-07-06 1994-07-08 Sgs Thomson Microelectronics Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini
WO2009128024A1 (en) * 2008-04-16 2009-10-22 Nxp B.V. Threshold voltage extraction circuit
US7808308B2 (en) * 2009-02-17 2010-10-05 United Microelectronics Corp. Voltage generating apparatus
US8208312B1 (en) 2009-09-22 2012-06-26 Novocell Semiconductor, Inc. Non-volatile memory element integratable with standard CMOS circuitry
US8199590B1 (en) 2009-09-25 2012-06-12 Novocell Semiconductor, Inc. Multiple time programmable non-volatile memory element
US8134859B1 (en) 2009-09-25 2012-03-13 Novocell Semiconductor, Inc. Method of sensing a programmable non-volatile memory element

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3727196A (en) * 1971-11-29 1973-04-10 Mostek Corp Dynamic random access memory
DE2708022C3 (de) * 1977-02-24 1980-01-10 Eurosil Gmbh, 8000 Muenchen Schaltungsanordnung in integrierter MOS-Technik zur Abgabe einer Konstantspannung
JPS57152595A (en) * 1981-03-17 1982-09-20 Toshiba Corp Nonvolatile semiconductor memory device
US4450367A (en) * 1981-12-14 1984-05-22 Motorola, Inc. Delta VBE bias current reference circuit
US4535259A (en) * 1982-06-18 1985-08-13 Seeq Technology, Inc. Sense amplifier for use with a semiconductor memory array
US4446383A (en) * 1982-10-29 1984-05-01 International Business Machines Reference voltage generating circuit
DE3424274A1 (de) * 1984-07-02 1986-01-09 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung zur abgabe einer zwischen einem positiven und einem negativen spannungspegel alternierenden taktspannung
US4689495A (en) * 1985-06-17 1987-08-25 Advanced Micro Devices, Inc. CMOS high voltage switch
IT1186108B (it) * 1985-11-27 1987-11-18 Sgs Microelettronica Spa Circuito ripetitore di tensione a basso offset

Also Published As

Publication number Publication date
JPS6326898A (ja) 1988-02-04
DE3717758C2 (de) 1996-09-19
JP2579943B2 (ja) 1997-02-12
DE3717758A1 (de) 1987-12-10
IT8620660A0 (it) 1986-06-03
US4800297A (en) 1989-01-24

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628