DE69127119D1 - Bipolartransistoren enthaltendes Halbleiterbauelement - Google Patents
Bipolartransistoren enthaltendes HalbleiterbauelementInfo
- Publication number
- DE69127119D1 DE69127119D1 DE69127119T DE69127119T DE69127119D1 DE 69127119 D1 DE69127119 D1 DE 69127119D1 DE 69127119 T DE69127119 T DE 69127119T DE 69127119 T DE69127119 T DE 69127119T DE 69127119 D1 DE69127119 D1 DE 69127119D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- component containing
- bipolar transistors
- containing bipolar
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0772—Vertical bipolar transistor in combination with resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2088357A JPH03288469A (ja) | 1990-04-04 | 1990-04-04 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69127119D1 true DE69127119D1 (de) | 1997-09-11 |
DE69127119T2 DE69127119T2 (de) | 1998-01-15 |
Family
ID=13940564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69127119T Expired - Fee Related DE69127119T2 (de) | 1990-04-04 | 1991-04-04 | Bipolartransistoren enthaltendes Halbleiterbauelement |
Country Status (5)
Country | Link |
---|---|
US (1) | US5111269A (de) |
EP (1) | EP0450614B1 (de) |
JP (1) | JPH03288469A (de) |
KR (1) | KR940004453B1 (de) |
DE (1) | DE69127119T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5256896A (en) * | 1991-08-30 | 1993-10-26 | International Business Machines Corporation | Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor |
US5321279A (en) * | 1992-11-09 | 1994-06-14 | Texas Instruments Incorporated | Base ballasting |
US5374844A (en) * | 1993-03-25 | 1994-12-20 | Micrel, Inc. | Bipolar transistor structure using ballast resistor |
DE69633004T2 (de) * | 1996-05-31 | 2004-11-25 | Stmicroelectronics S.R.L., Agrate Brianza | Vertikaler Leistungsbipolartransistor mit integriertem Fühlwiderstand |
US6107672A (en) * | 1997-09-04 | 2000-08-22 | Matsushita Electronics Corporation | Semiconductor device having a plurality of buried wells |
EP1071133B1 (de) | 1999-07-21 | 2010-04-21 | STMicroelectronics Srl | Verfahren zum Herstellen von CMOS Transistoren nichtflüchtiger Speicher und von vertikalen Bipolartransistoren mit hohem Verstärkungsfaktor |
US6784747B1 (en) | 2003-03-20 | 2004-08-31 | Analog Devices, Inc. | Amplifier circuit |
US6816015B2 (en) * | 2003-03-27 | 2004-11-09 | Analog Devices, Inc. | Amplifier circuit having a plurality of first and second base resistors |
US8492801B2 (en) * | 2007-05-11 | 2013-07-23 | System General Corp. | Semiconductor structure with high breakdown voltage and resistance |
CN103972172B (zh) * | 2013-02-01 | 2016-10-05 | 厦门博佳琴电子科技有限公司 | 一种二极管选择元件阵列结构及制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1428742A (en) * | 1973-06-02 | 1976-03-17 | Ferranti Ltd | Semiconductor devices |
US4136355A (en) * | 1976-02-10 | 1979-01-23 | Matsushita Electronics Corporation | Darlington transistor |
US4573256A (en) * | 1983-08-26 | 1986-03-04 | International Business Machines Corporation | Method for making a high performance transistor integrated circuit |
US4985739A (en) * | 1984-10-05 | 1991-01-15 | Analog Devices, Incorporated | Low-leakage JFET |
-
1990
- 1990-04-04 JP JP2088357A patent/JPH03288469A/ja active Pending
-
1991
- 1991-03-30 KR KR1019910005066A patent/KR940004453B1/ko not_active IP Right Cessation
- 1991-04-03 US US07/680,120 patent/US5111269A/en not_active Expired - Lifetime
- 1991-04-04 DE DE69127119T patent/DE69127119T2/de not_active Expired - Fee Related
- 1991-04-04 EP EP91105310A patent/EP0450614B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR940004453B1 (ko) | 1994-05-25 |
US5111269A (en) | 1992-05-05 |
JPH03288469A (ja) | 1991-12-18 |
EP0450614B1 (de) | 1997-08-06 |
DE69127119T2 (de) | 1998-01-15 |
EP0450614A1 (de) | 1991-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |