DE69127119D1 - Bipolartransistoren enthaltendes Halbleiterbauelement - Google Patents

Bipolartransistoren enthaltendes Halbleiterbauelement

Info

Publication number
DE69127119D1
DE69127119D1 DE69127119T DE69127119T DE69127119D1 DE 69127119 D1 DE69127119 D1 DE 69127119D1 DE 69127119 T DE69127119 T DE 69127119T DE 69127119 T DE69127119 T DE 69127119T DE 69127119 D1 DE69127119 D1 DE 69127119D1
Authority
DE
Germany
Prior art keywords
semiconductor component
component containing
bipolar transistors
containing bipolar
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127119T
Other languages
English (en)
Other versions
DE69127119T2 (de
Inventor
Kazunori Tsugaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69127119D1 publication Critical patent/DE69127119D1/de
Publication of DE69127119T2 publication Critical patent/DE69127119T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE69127119T 1990-04-04 1991-04-04 Bipolartransistoren enthaltendes Halbleiterbauelement Expired - Fee Related DE69127119T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2088357A JPH03288469A (ja) 1990-04-04 1990-04-04 半導体装置

Publications (2)

Publication Number Publication Date
DE69127119D1 true DE69127119D1 (de) 1997-09-11
DE69127119T2 DE69127119T2 (de) 1998-01-15

Family

ID=13940564

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127119T Expired - Fee Related DE69127119T2 (de) 1990-04-04 1991-04-04 Bipolartransistoren enthaltendes Halbleiterbauelement

Country Status (5)

Country Link
US (1) US5111269A (de)
EP (1) EP0450614B1 (de)
JP (1) JPH03288469A (de)
KR (1) KR940004453B1 (de)
DE (1) DE69127119T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256896A (en) * 1991-08-30 1993-10-26 International Business Machines Corporation Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US5374844A (en) * 1993-03-25 1994-12-20 Micrel, Inc. Bipolar transistor structure using ballast resistor
DE69633004T2 (de) * 1996-05-31 2004-11-25 Stmicroelectronics S.R.L., Agrate Brianza Vertikaler Leistungsbipolartransistor mit integriertem Fühlwiderstand
US6107672A (en) * 1997-09-04 2000-08-22 Matsushita Electronics Corporation Semiconductor device having a plurality of buried wells
EP1071133B1 (de) 1999-07-21 2010-04-21 STMicroelectronics Srl Verfahren zum Herstellen von CMOS Transistoren nichtflüchtiger Speicher und von vertikalen Bipolartransistoren mit hohem Verstärkungsfaktor
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) * 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors
US8492801B2 (en) * 2007-05-11 2013-07-23 System General Corp. Semiconductor structure with high breakdown voltage and resistance
CN103972172B (zh) * 2013-02-01 2016-10-05 厦门博佳琴电子科技有限公司 一种二极管选择元件阵列结构及制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1428742A (en) * 1973-06-02 1976-03-17 Ferranti Ltd Semiconductor devices
US4136355A (en) * 1976-02-10 1979-01-23 Matsushita Electronics Corporation Darlington transistor
US4573256A (en) * 1983-08-26 1986-03-04 International Business Machines Corporation Method for making a high performance transistor integrated circuit
US4985739A (en) * 1984-10-05 1991-01-15 Analog Devices, Incorporated Low-leakage JFET

Also Published As

Publication number Publication date
EP0450614B1 (de) 1997-08-06
DE69127119T2 (de) 1998-01-15
EP0450614A1 (de) 1991-10-09
KR940004453B1 (ko) 1994-05-25
US5111269A (en) 1992-05-05
JPH03288469A (ja) 1991-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee