DE69128384D1 - Heteroübergang-Bipolartransistor - Google Patents
Heteroübergang-BipolartransistorInfo
- Publication number
- DE69128384D1 DE69128384D1 DE69128384T DE69128384T DE69128384D1 DE 69128384 D1 DE69128384 D1 DE 69128384D1 DE 69128384 T DE69128384 T DE 69128384T DE 69128384 T DE69128384 T DE 69128384T DE 69128384 D1 DE69128384 D1 DE 69128384D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- heterojunction bipolar
- heterojunction
- transistor
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2084373A JP2918275B2 (ja) | 1990-03-30 | 1990-03-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69128384D1 true DE69128384D1 (de) | 1998-01-22 |
DE69128384T2 DE69128384T2 (de) | 1998-04-30 |
Family
ID=13828732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69128384T Expired - Fee Related DE69128384T2 (de) | 1990-03-30 | 1991-03-28 | Heteroübergang-Bipolartransistor |
Country Status (4)
Country | Link |
---|---|
US (1) | US5153692A (de) |
EP (1) | EP0472262B1 (de) |
JP (1) | JP2918275B2 (de) |
DE (1) | DE69128384T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2716036B1 (fr) * | 1994-02-07 | 1997-07-11 | Mitsubishi Electric Corp | Couche semi-conductrice composée de haute résistance et procédé pour sa croissance cristalline. |
US5804487A (en) * | 1996-07-10 | 1998-09-08 | Trw Inc. | Method of fabricating high βHBT devices |
DE10329663B9 (de) * | 2003-07-01 | 2015-08-13 | Infineon Technologies Ag | Verfahren zur Herstellung einer vertikalen Isolation für ein elektronisches Bauelement |
CN103107185B (zh) * | 2011-11-11 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | 锗硅功率hbt、其制造方法及锗硅功率hbt多指器件 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4586071A (en) * | 1984-05-11 | 1986-04-29 | International Business Machines Corporation | Heterostructure bipolar transistor |
JPH0744182B2 (ja) * | 1984-11-09 | 1995-05-15 | 株式会社日立製作所 | ヘテロ接合バイポ−ラ・トランジスタ |
-
1990
- 1990-03-30 JP JP2084373A patent/JP2918275B2/ja not_active Expired - Fee Related
-
1991
- 1991-03-28 US US07/676,548 patent/US5153692A/en not_active Expired - Fee Related
- 1991-03-28 EP EP91302780A patent/EP0472262B1/de not_active Expired - Lifetime
- 1991-03-28 DE DE69128384T patent/DE69128384T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2918275B2 (ja) | 1999-07-12 |
EP0472262A1 (de) | 1992-02-26 |
US5153692A (en) | 1992-10-06 |
DE69128384T2 (de) | 1998-04-30 |
EP0472262B1 (de) | 1997-12-10 |
JPH03283624A (ja) | 1991-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |