FR2606214B1 - Transistor bipolaire du type heterojonction - Google Patents

Transistor bipolaire du type heterojonction

Info

Publication number
FR2606214B1
FR2606214B1 FR878715016A FR8715016A FR2606214B1 FR 2606214 B1 FR2606214 B1 FR 2606214B1 FR 878715016 A FR878715016 A FR 878715016A FR 8715016 A FR8715016 A FR 8715016A FR 2606214 B1 FR2606214 B1 FR 2606214B1
Authority
FR
France
Prior art keywords
heterojunction transistor
bipolar heterojunction
bipolar
transistor
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR878715016A
Other languages
English (en)
Other versions
FR2606214A1 (fr
Inventor
Hiroji Kawai
Kenichi Taira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2606214A1 publication Critical patent/FR2606214A1/fr
Application granted granted Critical
Publication of FR2606214B1 publication Critical patent/FR2606214B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
FR878715016A 1986-10-29 1987-10-29 Transistor bipolaire du type heterojonction Expired FR2606214B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61257293A JP2590842B2 (ja) 1986-10-29 1986-10-29 ヘテロ接合型バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
FR2606214A1 FR2606214A1 (fr) 1988-05-06
FR2606214B1 true FR2606214B1 (fr) 1989-12-15

Family

ID=17304356

Family Applications (1)

Application Number Title Priority Date Filing Date
FR878715016A Expired FR2606214B1 (fr) 1986-10-29 1987-10-29 Transistor bipolaire du type heterojonction

Country Status (5)

Country Link
US (1) US4903104A (fr)
JP (1) JP2590842B2 (fr)
KR (1) KR950014277B1 (fr)
DE (1) DE3736693C2 (fr)
FR (1) FR2606214B1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5154080A (en) * 1986-10-29 1992-10-13 Westinghouse Electric Corp. Integrated check valve testing system
US5132765A (en) * 1989-09-11 1992-07-21 Blouse Jeffrey L Narrow base transistor and method of fabricating same
US5008207A (en) * 1989-09-11 1991-04-16 International Business Machines Corporation Method of fabricating a narrow base transistor
JP3210657B2 (ja) * 1989-11-27 2001-09-17 株式会社日立製作所 ヘテロ接合バイポーラトランジスタ
US5027182A (en) * 1990-10-11 1991-06-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks
JPH0785476B2 (ja) * 1991-06-14 1995-09-13 インターナショナル・ビジネス・マシーンズ・コーポレイション エミッタ埋め込み型バイポーラ・トランジスタ構造
JPH0529332A (ja) * 1991-07-22 1993-02-05 Rohm Co Ltd ヘテロ接合バイポーラトランジスタとその製造方法
JPH06104273A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 半導体装置
US5557131A (en) * 1992-10-19 1996-09-17 At&T Global Information Solutions Company Elevated emitter for double poly BICMOS devices
US5365089A (en) * 1992-12-23 1994-11-15 International Business Machines Corporation Double heterojunction bipolar transistor and the method of manufacture therefor
JPH10294491A (ja) * 1997-04-22 1998-11-04 Toshiba Corp 半導体発光素子およびその製造方法ならびに発光装置
US6936519B2 (en) * 2002-08-19 2005-08-30 Chartered Semiconductor Manufacturing, Ltd. Double polysilicon bipolar transistor and method of manufacture therefor
US20040043584A1 (en) * 2002-08-27 2004-03-04 Thomas Shawn G. Semiconductor device and method of making same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181060A (ja) * 1983-03-30 1984-10-15 Fujitsu Ltd 半導体装置
JPS59208873A (ja) * 1983-05-13 1984-11-27 Agency Of Ind Science & Technol 半導体装置
JPS60253267A (ja) * 1984-05-29 1985-12-13 Toshiba Corp ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
JPS6231165A (ja) * 1985-08-02 1987-02-10 Matsushita Electric Ind Co Ltd ヘテロ接合化合物半導体装置
JPH0614536B2 (ja) * 1985-09-17 1994-02-23 株式会社東芝 バイポ−ラ集積回路
JPH06119167A (ja) * 1992-10-06 1994-04-28 Nec Corp ディジタル信号処理回路

Also Published As

Publication number Publication date
DE3736693A1 (de) 1988-05-11
JPS63110774A (ja) 1988-05-16
KR880005688A (ko) 1988-06-30
KR950014277B1 (ko) 1995-11-24
US4903104A (en) 1990-02-20
FR2606214A1 (fr) 1988-05-06
DE3736693C2 (de) 2001-10-18
JP2590842B2 (ja) 1997-03-12

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Legal Events

Date Code Title Description
ST Notification of lapse