DE3888602T2 - Bipolartransistor mit Heteroübergängen. - Google Patents

Bipolartransistor mit Heteroübergängen.

Info

Publication number
DE3888602T2
DE3888602T2 DE3888602T DE3888602T DE3888602T2 DE 3888602 T2 DE3888602 T2 DE 3888602T2 DE 3888602 T DE3888602 T DE 3888602T DE 3888602 T DE3888602 T DE 3888602T DE 3888602 T2 DE3888602 T2 DE 3888602T2
Authority
DE
Germany
Prior art keywords
heterojunctions
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3888602T
Other languages
English (en)
Other versions
DE3888602D1 (de
Inventor
Katsuhiko Mitani
Tomonori Tanoue
Chushiro Kusano
Masayoshi Kobayashi
Susumu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3888602D1 publication Critical patent/DE3888602D1/de
Application granted granted Critical
Publication of DE3888602T2 publication Critical patent/DE3888602T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE3888602T 1987-08-24 1988-08-19 Bipolartransistor mit Heteroübergängen. Expired - Fee Related DE3888602T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208109A JP2619407B2 (ja) 1987-08-24 1987-08-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE3888602D1 DE3888602D1 (de) 1994-04-28
DE3888602T2 true DE3888602T2 (de) 1994-10-27

Family

ID=16550785

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888602T Expired - Fee Related DE3888602T2 (de) 1987-08-24 1988-08-19 Bipolartransistor mit Heteroübergängen.

Country Status (4)

Country Link
US (1) US5019524A (de)
EP (1) EP0305121B1 (de)
JP (1) JP2619407B2 (de)
DE (1) DE3888602T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2615983B2 (ja) * 1989-03-08 1997-06-04 松下電器産業株式会社 ヘテロ接合バイポーラトランジスタの製造方法
JP2890729B2 (ja) * 1990-07-25 1999-05-17 日本電気株式会社 バイポーラトランジスタおよびその製造方法
FR2687008B1 (fr) * 1992-02-05 2001-06-22 Patrick Launay Procede de fabrication de structures actives et dispositifs semiconducteurs ainsi obtenus.
US5939738A (en) * 1995-10-25 1999-08-17 Texas Instruments Incorporated Low base-resistance bipolar transistor
US6368929B1 (en) * 2000-08-17 2002-04-09 Motorola, Inc. Method of manufacturing a semiconductor component and semiconductor component thereof
US11024728B2 (en) * 2019-02-15 2021-06-01 Qualcomm Incorporated Monolithic self-aligned heterojunction bipolar transistor (HBT) and complementary metal-oxide-semiconductor (CMOS)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3381606D1 (de) * 1982-02-19 1990-06-28 Hitachi Ltd Transistor mit heterouebergang und verfahren zu dessen herstellung.
US4593305A (en) * 1983-05-17 1986-06-03 Kabushiki Kaisha Toshiba Heterostructure bipolar transistor
US4617724A (en) * 1983-06-30 1986-10-21 Fujitsu Limited Process for fabricating heterojunction bipolar transistor with low base resistance
US4586071A (en) * 1984-05-11 1986-04-29 International Business Machines Corporation Heterostructure bipolar transistor
EP0166923A3 (de) * 1984-06-29 1987-09-30 International Business Machines Corporation Hochleistungsbipolartransistor mit einem zwischen dem Emitter und der Extrinsic-Basiszone angeordneten leicht dotierten Schutzring
US4603765A (en) * 1984-07-02 1986-08-05 Volvo Car B.V. Means for maintaining clutch disengagement where transmission is neutral
JPS6191959A (ja) * 1984-10-12 1986-05-10 Sony Corp ヘテロ接合型トランジスタ
JPH0758774B2 (ja) * 1984-10-26 1995-06-21 工業技術院長 半導体装置
JPH0744182B2 (ja) * 1984-11-09 1995-05-15 株式会社日立製作所 ヘテロ接合バイポ−ラ・トランジスタ
JPS61147571A (ja) * 1984-12-21 1986-07-05 Toshiba Corp ヘテロ接合バイポ−ラトランジスタの製造方法
EP0206787B1 (de) * 1985-06-21 1991-12-18 Matsushita Electric Industrial Co., Ltd. Bipolarer Transistor mit Heteroübergang und Verfahren zu seiner Herstellung
EP0216155A3 (de) * 1985-08-23 1989-03-15 Texas Instruments Incorporated Tunneleffektbauelement mit drei Polen
JPS62130511A (ja) * 1985-12-02 1987-06-12 Hitachi Ltd 半導体素子製造方法
US4872040A (en) * 1987-04-23 1989-10-03 International Business Machines Corporation Self-aligned heterojunction transistor
JPS63289958A (ja) * 1987-05-22 1988-11-28 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
DE3830102A1 (de) * 1987-09-16 1989-03-30 Licentia Gmbh Si/sige-halbleiterkoerper

Also Published As

Publication number Publication date
DE3888602D1 (de) 1994-04-28
JP2619407B2 (ja) 1997-06-11
EP0305121B1 (de) 1994-03-23
EP0305121A3 (en) 1990-03-28
US5019524A (en) 1991-05-28
JPS6451658A (en) 1989-02-27
EP0305121A2 (de) 1989-03-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee