DE3882565T2 - Bipolartransistor. - Google Patents

Bipolartransistor.

Info

Publication number
DE3882565T2
DE3882565T2 DE88105630T DE3882565T DE3882565T2 DE 3882565 T2 DE3882565 T2 DE 3882565T2 DE 88105630 T DE88105630 T DE 88105630T DE 3882565 T DE3882565 T DE 3882565T DE 3882565 T2 DE3882565 T2 DE 3882565T2
Authority
DE
Germany
Prior art keywords
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88105630T
Other languages
English (en)
Other versions
DE3882565D1 (de
Inventor
Akio Kayanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3882565D1 publication Critical patent/DE3882565D1/de
Application granted granted Critical
Publication of DE3882565T2 publication Critical patent/DE3882565T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE88105630T 1987-04-10 1988-04-08 Bipolartransistor. Expired - Lifetime DE3882565T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62088353A JPS63253664A (ja) 1987-04-10 1987-04-10 バイポ−ラトランジスタ

Publications (2)

Publication Number Publication Date
DE3882565D1 DE3882565D1 (de) 1993-09-02
DE3882565T2 true DE3882565T2 (de) 1994-02-24

Family

ID=13940455

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88105630T Expired - Lifetime DE3882565T2 (de) 1987-04-10 1988-04-08 Bipolartransistor.

Country Status (6)

Country Link
US (1) US4984053A (de)
EP (1) EP0286117B1 (de)
JP (1) JPS63253664A (de)
KR (1) KR0118111B1 (de)
CA (1) CA1307357C (de)
DE (1) DE3882565T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2579999B2 (ja) * 1988-05-13 1997-02-12 株式会社日立製作所 半導体装置の製造方法
US5468989A (en) * 1988-06-02 1995-11-21 Hitachi, Ltd. Semiconductor integrated circuit device having an improved vertical bipolar transistor structure
JP2861006B2 (ja) * 1988-12-08 1999-02-24 ソニー株式会社 バイポーラトランジスタの製造方法
DE69031784D1 (de) * 1989-04-05 1998-01-22 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem Kollektorbereich, einem Basisbereich und einem Emitterbereich, und Verfahren zu deren Herstellung
US5221856A (en) * 1989-04-05 1993-06-22 U.S. Philips Corp. Bipolar transistor with floating guard region under extrinsic base
US5410175A (en) * 1989-08-31 1995-04-25 Hamamatsu Photonics K.K. Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate
JP2746289B2 (ja) * 1989-09-09 1998-05-06 忠弘 大見 素子の作製方法並びに半導体素子およびその作製方法
JP2825169B2 (ja) * 1990-09-17 1998-11-18 キヤノン株式会社 半導体装置
US5302535A (en) * 1991-09-20 1994-04-12 Nec Corporation Method of manufacturing high speed bipolar transistor
JPH0831841A (ja) * 1994-07-12 1996-02-02 Sony Corp 半導体装置及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE27045E (en) * 1963-11-08 1971-02-02 Transistor with limited area base-collector junction
US4003072A (en) * 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
NL185484C (nl) * 1975-04-28 1990-04-17 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam bevattende tenminste een transistor.
US4153904A (en) * 1977-10-03 1979-05-08 Texas Instruments Incorporated Semiconductor device having a high breakdown voltage junction characteristic
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
US4868624A (en) * 1980-05-09 1989-09-19 Regents Of The University Of Minnesota Channel collector transistor
JPS57201062A (en) * 1981-06-05 1982-12-09 Nec Corp Semiconductor device
NL8302092A (nl) * 1983-06-13 1985-01-02 Philips Nv Halfgeleiderinrichting bevattende een veldeffekttransistor.
JPS60247940A (ja) * 1984-05-23 1985-12-07 Hitachi Ltd 半導体装置およびその製造方法
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
JPH0622238B2 (ja) * 1985-10-02 1994-03-23 沖電気工業株式会社 バイポ−ラ型半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
KR880013255A (ko) 1988-11-30
JPS63253664A (ja) 1988-10-20
KR0118111B1 (ko) 1997-09-30
CA1307357C (en) 1992-09-08
EP0286117B1 (de) 1993-07-28
EP0286117A1 (de) 1988-10-12
US4984053A (en) 1991-01-08
DE3882565D1 (de) 1993-09-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

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