DE3880443D1 - Feldeffekttransistor. - Google Patents

Feldeffekttransistor.

Info

Publication number
DE3880443D1
DE3880443D1 DE8888310926T DE3880443T DE3880443D1 DE 3880443 D1 DE3880443 D1 DE 3880443D1 DE 8888310926 T DE8888310926 T DE 8888310926T DE 3880443 T DE3880443 T DE 3880443T DE 3880443 D1 DE3880443 D1 DE 3880443D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888310926T
Other languages
English (en)
Other versions
DE3880443T2 (de
Inventor
Shinji Miyano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3880443D1 publication Critical patent/DE3880443D1/de
Application granted granted Critical
Publication of DE3880443T2 publication Critical patent/DE3880443T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE88310926T 1987-11-18 1988-11-18 Feldeffekttransistor. Expired - Lifetime DE3880443T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62289479A JPH01132170A (ja) 1987-11-18 1987-11-18 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE3880443D1 true DE3880443D1 (de) 1993-05-27
DE3880443T2 DE3880443T2 (de) 1993-09-30

Family

ID=17743807

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88310926T Expired - Lifetime DE3880443T2 (de) 1987-11-18 1988-11-18 Feldeffekttransistor.

Country Status (4)

Country Link
US (1) US5047811A (de)
EP (1) EP0317345B1 (de)
JP (1) JPH01132170A (de)
DE (1) DE3880443T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1300763C (en) * 1988-09-29 1992-05-12 Masanori Nishiguchi Semiconductor device radiation hardened mesfet
CA1301955C (en) * 1988-09-30 1992-05-26 Masanori Nishiguchi Semiconductor device mesfet with upper and lower layers
AU643781B2 (en) * 1989-09-26 1993-11-25 Sumitomo Electric Industries, Ltd. A semiconductor device
AU643780B2 (en) * 1991-04-29 1993-11-25 Sumitomo Electric Industries, Ltd. A semiconductor device
JP2000091348A (ja) * 1998-09-09 2000-03-31 Sanyo Electric Co Ltd 電界効果型半導体装置及びその製造方法
JP5130641B2 (ja) * 2006-03-31 2013-01-30 サンケン電気株式会社 複合半導体装置
JP2008306130A (ja) * 2007-06-11 2008-12-18 Sanken Electric Co Ltd 電界効果型半導体装置及びその製造方法
US10811527B2 (en) * 2018-09-06 2020-10-20 Semiconductor Components Industries, Llc Electronic device including high electron mobility transistors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728322A (en) * 1980-07-28 1982-02-16 Fujitsu Ltd Formation of semiconductor single crystal layer
GB2090053B (en) * 1980-12-19 1984-09-19 Philips Electronic Associated Mesfet
JPS59207667A (ja) * 1983-05-11 1984-11-24 Hitachi Ltd 半導体装置
JPS60189268A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
JPH0815205B2 (ja) * 1985-01-23 1996-02-14 株式会社日立製作所 半導体装置
JPH088350B2 (ja) * 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
US4616242A (en) * 1985-05-08 1986-10-07 International Business Machines Corporation Enhancement and depletion mode selection layer for field effect transistor
JPH084138B2 (ja) * 1986-05-23 1996-01-17 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
JPH01132170A (ja) 1989-05-24
EP0317345B1 (de) 1993-04-21
US5047811A (en) 1991-09-10
DE3880443T2 (de) 1993-09-30
EP0317345A1 (de) 1989-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)