DE3851991D1 - Bipolartransistoren. - Google Patents
Bipolartransistoren.Info
- Publication number
- DE3851991D1 DE3851991D1 DE3851991T DE3851991T DE3851991D1 DE 3851991 D1 DE3851991 D1 DE 3851991D1 DE 3851991 T DE3851991 T DE 3851991T DE 3851991 T DE3851991 T DE 3851991T DE 3851991 D1 DE3851991 D1 DE 3851991D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistors
- bipolar
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62199006A JP2615646B2 (ja) | 1987-08-11 | 1987-08-11 | バイポーラトランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3851991D1 true DE3851991D1 (de) | 1994-12-08 |
DE3851991T2 DE3851991T2 (de) | 1995-04-20 |
Family
ID=16400538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3851991T Expired - Fee Related DE3851991T2 (de) | 1987-08-11 | 1988-08-08 | Bipolartransistoren. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0303435B1 (de) |
JP (1) | JP2615646B2 (de) |
KR (1) | KR0122736B1 (de) |
CA (1) | CA1309191C (de) |
DE (1) | DE3851991T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9013926D0 (en) * | 1990-06-22 | 1990-08-15 | Gen Electric Co Plc | A vertical pnp transistor |
FR2672733B1 (fr) * | 1991-02-13 | 1997-08-22 | France Telecom | Perfectionnement au collecteur d'un transistor bipolaire compatible avec la technologie mos. |
US5389553A (en) * | 1993-06-30 | 1995-02-14 | National Semiconductor Corporation | Methods for fabrication of transistors |
JP2708027B2 (ja) * | 1995-10-05 | 1998-02-04 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6121102A (en) * | 1997-03-18 | 2000-09-19 | Telfonaktiebolaget Lm Ericsson | Method of electrical connection through an isolation trench to form trench-isolated bipolar devices |
EP1021828B1 (de) * | 1997-07-11 | 2010-01-06 | Infineon Technologies AG | Ein herstellungsverfahren für hochfrequenz-ic-komponenten |
KR100761561B1 (ko) * | 2000-07-03 | 2007-09-27 | 엔엑스피 비 브이 | 반도체 디바이스 제조 방법 |
EP3214036A1 (de) * | 2016-03-02 | 2017-09-06 | Anheuser-Busch InBev S.A. | Getränkezapfhahn mit herausnehmbarem schlauch und ventil |
CN110010677B (zh) * | 2019-04-25 | 2024-02-13 | 江苏新顺微电子股份有限公司 | 一种改善结终端延伸结构三极管可靠性的器件结构及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3534234A (en) * | 1966-12-15 | 1970-10-13 | Texas Instruments Inc | Modified planar process for making semiconductor devices having ultrafine mesa type geometry |
FR2352403A1 (fr) * | 1976-05-20 | 1977-12-16 | Comp Generale Electricite | Circuit integre rapide |
US4252581A (en) * | 1979-10-01 | 1981-02-24 | International Business Machines Corporation | Selective epitaxy method for making filamentary pedestal transistor |
JPS59217364A (ja) * | 1983-05-26 | 1984-12-07 | Sony Corp | 半導体装置の製法 |
JPS60214563A (ja) * | 1984-04-09 | 1985-10-26 | Mitsubishi Electric Corp | バイポ−ラトランジスタの製造方法 |
JPS60253267A (ja) * | 1984-05-29 | 1985-12-13 | Toshiba Corp | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
DE3564518D1 (en) * | 1984-09-29 | 1988-09-22 | Toshiba Kk | Heterojunction bipolar transistor and method of manufacturing the same |
JPS61265867A (ja) * | 1985-05-20 | 1986-11-25 | Nec Corp | 半導体装置 |
-
1987
- 1987-08-11 JP JP62199006A patent/JP2615646B2/ja not_active Expired - Fee Related
-
1988
- 1988-07-28 CA CA000573242A patent/CA1309191C/en not_active Expired - Lifetime
- 1988-08-05 KR KR1019880010002A patent/KR0122736B1/ko not_active IP Right Cessation
- 1988-08-08 DE DE3851991T patent/DE3851991T2/de not_active Expired - Fee Related
- 1988-08-08 EP EP88307335A patent/EP0303435B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6442859A (en) | 1989-02-15 |
KR0122736B1 (ko) | 1997-11-26 |
JP2615646B2 (ja) | 1997-06-04 |
EP0303435B1 (de) | 1994-11-02 |
DE3851991T2 (de) | 1995-04-20 |
EP0303435A3 (en) | 1990-01-03 |
KR890004439A (ko) | 1989-04-22 |
EP0303435A2 (de) | 1989-02-15 |
CA1309191C (en) | 1992-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FI892558A0 (fi) | I laoga temperaturer haerdbar cementkomposition. | |
FI883521A0 (fi) | Polykarbonatjalusidoerr i horisontala sektioner. | |
DE3751972D1 (de) | Bipolarer Transistor | |
DE3768854D1 (de) | Lateraltransistor. | |
DE3788525D1 (de) | Feldeffekttransistoranordnungen. | |
DE3854677D1 (de) | Komplementäre Feldeffekttransistorstruktur. | |
DE3751098D1 (de) | Feldeffekttransistor. | |
FI880917A0 (fi) | Luftstyrningsdysa foer torkpartiet i en snabbgaoende pappersmaskin. | |
FI880065A0 (fi) | Foerfarande foer konferensfoerbindningar i datamaskinstyrda digitala telefonfoermedlingsanordningar. | |
DE3887716D1 (de) | Transistor. | |
FI884635A (fi) | En trappformig stoet-oeverlappsfog i en kaerna. | |
DE3860836D1 (de) | Bipolarer transistor mit heterouebergang. | |
DE3788500D1 (de) | Bipolarer Halbleitertransistor. | |
FI880853A0 (fi) | Tappningsraenna foer sodasmaelta i en sodapanna. | |
DE3851991D1 (de) | Bipolartransistoren. | |
DE3882565D1 (de) | Bipolartransistor. | |
DE3773276D1 (de) | Transistoranordnung. | |
DE3880443D1 (de) | Feldeffekttransistor. | |
DE68909977D1 (de) | Bipolartransistor. | |
FI872717A0 (fi) | Maetanordning foer radongas i jordmaon. | |
FI871493A0 (fi) | Banfoering i gruppmellanrummen i en maongcylindertork i en pappersmaskin. | |
DE3874949D1 (de) | Heterouebergang-bipolartransistor. | |
DE3854098D1 (de) | Feldeffekttransistor. | |
FI883353A0 (fi) | Faeltavlaenkningskrets i en bilddisplayanordning. | |
FI885350A (fi) | Mjukloedbart tunnskikt i en- eller flerskiktig metallisering. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |