DE3860836D1 - Bipolarer transistor mit heterouebergang. - Google Patents
Bipolarer transistor mit heterouebergang.Info
- Publication number
- DE3860836D1 DE3860836D1 DE8888101567T DE3860836T DE3860836D1 DE 3860836 D1 DE3860836 D1 DE 3860836D1 DE 8888101567 T DE8888101567 T DE 8888101567T DE 3860836 T DE3860836 T DE 3860836T DE 3860836 D1 DE3860836 D1 DE 3860836D1
- Authority
- DE
- Germany
- Prior art keywords
- heterou
- transition
- bipolar transistor
- bipolar
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2476187 | 1987-02-06 | ||
JP12574887 | 1987-05-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3860836D1 true DE3860836D1 (de) | 1990-11-29 |
Family
ID=26362340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888101567T Expired - Lifetime DE3860836D1 (de) | 1987-02-06 | 1988-02-04 | Bipolarer transistor mit heterouebergang. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5019890A (de) |
EP (1) | EP0278386B1 (de) |
JP (1) | JPH0658918B2 (de) |
CA (1) | CA1299771C (de) |
DE (1) | DE3860836D1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5150185A (en) * | 1990-04-18 | 1992-09-22 | Fujitsu Limited | Semiconductor device |
US5150186A (en) * | 1991-03-06 | 1992-09-22 | Micron Technology, Inc. | CMOS output pull-up driver |
US5270223A (en) * | 1991-06-28 | 1993-12-14 | Texas Instruments Incorporated | Multiple layer wide bandgap collector structure for bipolar transistors |
EP0520482A3 (en) * | 1991-06-28 | 1994-06-22 | Texas Instruments Inc | Multiple layer collector structure for bipolar transistors |
US5171697A (en) * | 1991-06-28 | 1992-12-15 | Texas Instruments Incorporated | Method of forming multiple layer collector structure for bipolar transistors |
JPH05109753A (ja) * | 1991-08-16 | 1993-04-30 | Toshiba Corp | バイポーラトランジスタ |
US5298438A (en) * | 1992-08-31 | 1994-03-29 | Texas Instruments Incorporated | Method of reducing extrinsic base-collector capacitance in bipolar transistors |
JPH0815214B2 (ja) * | 1993-03-12 | 1996-02-14 | 日本電気株式会社 | 量子細線構造 |
JP3292894B2 (ja) * | 1993-05-12 | 2002-06-17 | 日本電信電話株式会社 | 集積化受光回路 |
JP3463892B2 (ja) * | 1994-07-13 | 2003-11-05 | 本田技研工業株式会社 | 車両用エアクリーナ |
US5631477A (en) * | 1995-06-02 | 1997-05-20 | Trw Inc. | Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor |
JP6247300B2 (ja) * | 2012-08-28 | 2017-12-13 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッドAdvanced Energy Industries, Inc. | 3端子pinダイオード |
CN112071904B (zh) * | 2020-08-11 | 2024-01-30 | 陕西炬脉瑞丰科技有限公司 | 一种高压雪崩晶体管 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59211267A (ja) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | ヘテロ接合バイポ−ラトランジスタ |
US4672413A (en) * | 1984-04-16 | 1987-06-09 | Trw Inc. | Barrier emitter transistor |
EP0206787B1 (de) * | 1985-06-21 | 1991-12-18 | Matsushita Electric Industrial Co., Ltd. | Bipolarer Transistor mit Heteroübergang und Verfahren zu seiner Herstellung |
JPH07107902B2 (ja) * | 1985-07-10 | 1995-11-15 | 富士通株式会社 | 半導体装置 |
JPH0656851B2 (ja) * | 1985-08-07 | 1994-07-27 | 日本電気株式会社 | 半導体装置 |
-
1988
- 1988-02-03 CA CA000558076A patent/CA1299771C/en not_active Expired - Lifetime
- 1988-02-04 EP EP88101567A patent/EP0278386B1/de not_active Expired
- 1988-02-04 DE DE8888101567T patent/DE3860836D1/de not_active Expired - Lifetime
- 1988-02-05 JP JP63023941A patent/JPH0658918B2/ja not_active Expired - Lifetime
-
1990
- 1990-09-14 US US07/587,451 patent/US5019890A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0278386A2 (de) | 1988-08-17 |
JPH0658918B2 (ja) | 1994-08-03 |
EP0278386A3 (en) | 1989-05-03 |
US5019890A (en) | 1991-05-28 |
JPS6453453A (en) | 1989-03-01 |
CA1299771C (en) | 1992-04-28 |
EP0278386B1 (de) | 1990-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |