DE3860836D1 - Bipolarer transistor mit heterouebergang. - Google Patents

Bipolarer transistor mit heterouebergang.

Info

Publication number
DE3860836D1
DE3860836D1 DE8888101567T DE3860836T DE3860836D1 DE 3860836 D1 DE3860836 D1 DE 3860836D1 DE 8888101567 T DE8888101567 T DE 8888101567T DE 3860836 T DE3860836 T DE 3860836T DE 3860836 D1 DE3860836 D1 DE 3860836D1
Authority
DE
Germany
Prior art keywords
heterou
transition
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888101567T
Other languages
English (en)
Inventor
Tadao Nippon Telegr Ishibashi
Yoshiki Nippon Telegr Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3860836D1 publication Critical patent/DE3860836D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE8888101567T 1987-02-06 1988-02-04 Bipolarer transistor mit heterouebergang. Expired - Lifetime DE3860836D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2476187 1987-02-06
JP12574887 1987-05-25

Publications (1)

Publication Number Publication Date
DE3860836D1 true DE3860836D1 (de) 1990-11-29

Family

ID=26362340

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888101567T Expired - Lifetime DE3860836D1 (de) 1987-02-06 1988-02-04 Bipolarer transistor mit heterouebergang.

Country Status (5)

Country Link
US (1) US5019890A (de)
EP (1) EP0278386B1 (de)
JP (1) JPH0658918B2 (de)
CA (1) CA1299771C (de)
DE (1) DE3860836D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150185A (en) * 1990-04-18 1992-09-22 Fujitsu Limited Semiconductor device
US5150186A (en) * 1991-03-06 1992-09-22 Micron Technology, Inc. CMOS output pull-up driver
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
EP0520482A3 (en) * 1991-06-28 1994-06-22 Texas Instruments Inc Multiple layer collector structure for bipolar transistors
US5171697A (en) * 1991-06-28 1992-12-15 Texas Instruments Incorporated Method of forming multiple layer collector structure for bipolar transistors
JPH05109753A (ja) * 1991-08-16 1993-04-30 Toshiba Corp バイポーラトランジスタ
US5298438A (en) * 1992-08-31 1994-03-29 Texas Instruments Incorporated Method of reducing extrinsic base-collector capacitance in bipolar transistors
JPH0815214B2 (ja) * 1993-03-12 1996-02-14 日本電気株式会社 量子細線構造
JP3292894B2 (ja) * 1993-05-12 2002-06-17 日本電信電話株式会社 集積化受光回路
JP3463892B2 (ja) * 1994-07-13 2003-11-05 本田技研工業株式会社 車両用エアクリーナ
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
JP6247300B2 (ja) * 2012-08-28 2017-12-13 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． ３端子ｐｉｎダイオード
CN112071904B (zh) * 2020-08-11 2024-01-30 陕西炬脉瑞丰科技有限公司 一种高压雪崩晶体管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59211267A (ja) * 1983-05-17 1984-11-30 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ
US4672413A (en) * 1984-04-16 1987-06-09 Trw Inc. Barrier emitter transistor
EP0206787B1 (de) * 1985-06-21 1991-12-18 Matsushita Electric Industrial Co., Ltd. Bipolarer Transistor mit Heteroübergang und Verfahren zu seiner Herstellung
JPH07107902B2 (ja) * 1985-07-10 1995-11-15 富士通株式会社 半導体装置
JPH0656851B2 (ja) * 1985-08-07 1994-07-27 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
EP0278386A2 (de) 1988-08-17
JPH0658918B2 (ja) 1994-08-03
EP0278386A3 (en) 1989-05-03
US5019890A (en) 1991-05-28
JPS6453453A (en) 1989-03-01
CA1299771C (en) 1992-04-28
EP0278386B1 (de) 1990-10-24

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Legal Events

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