DE3884665D1 - Hochleistungstransistor mit Seitenwandemitter. - Google Patents
Hochleistungstransistor mit Seitenwandemitter.Info
- Publication number
- DE3884665D1 DE3884665D1 DE88104842T DE3884665T DE3884665D1 DE 3884665 D1 DE3884665 D1 DE 3884665D1 DE 88104842 T DE88104842 T DE 88104842T DE 3884665 T DE3884665 T DE 3884665T DE 3884665 D1 DE3884665 D1 DE 3884665D1
- Authority
- DE
- Germany
- Prior art keywords
- high power
- power transistor
- emitter
- sidewall
- sidewall emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/048,346 US4847670A (en) | 1987-05-11 | 1987-05-11 | High performance sidewall emitter transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3884665D1 true DE3884665D1 (de) | 1993-11-11 |
DE3884665T2 DE3884665T2 (de) | 1994-05-11 |
Family
ID=21954085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88104842T Expired - Fee Related DE3884665T2 (de) | 1987-05-11 | 1988-03-25 | Hochleistungstransistor mit Seitenwandemitter. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4847670A (de) |
EP (1) | EP0290763B1 (de) |
JP (1) | JPH0646638B2 (de) |
AU (1) | AU601575B2 (de) |
BR (1) | BR8801815A (de) |
CA (1) | CA1277780C (de) |
DE (1) | DE3884665T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4980738A (en) * | 1988-06-29 | 1990-12-25 | Texas Instruments Incorporated | Single polysilicon layer transistor with reduced emitter and base resistance |
JPH06101473B2 (ja) * | 1988-12-05 | 1994-12-12 | 日本電気株式会社 | 半導体装置 |
US5001538A (en) * | 1988-12-28 | 1991-03-19 | Synergy Semiconductor Corporation | Bipolar sinker structure and process for forming same |
US4994400A (en) * | 1989-01-27 | 1991-02-19 | Tektronix, Inc. | Method of fabricating a semiconductor device using a tri-layer structure and conductive sidewalls |
US5144403A (en) * | 1989-02-07 | 1992-09-01 | Hewlett-Packard Company | Bipolar transistor with trench-isolated emitter |
US5008210A (en) * | 1989-02-07 | 1991-04-16 | Hewlett-Packard Company | Process of making a bipolar transistor with a trench-isolated emitter |
US4902639A (en) * | 1989-08-03 | 1990-02-20 | Motorola, Inc. | Process for making BiCMOS integrated circuit having a shallow trench bipolar transistor with vertical base contacts |
US5306649A (en) * | 1991-07-26 | 1994-04-26 | Avantek, Inc. | Method for producing a fully walled emitter-base structure in a bipolar transistor |
US5194926A (en) * | 1991-10-03 | 1993-03-16 | Motorola Inc. | Semiconductor device having an inverse-T bipolar transistor |
JPH0758120A (ja) * | 1993-08-11 | 1995-03-03 | Nec Corp | 半導体装置及びその製造方法 |
US6501134B1 (en) * | 2001-01-09 | 2002-12-31 | Advanced Micro Devices, Inc. | Ultra thin SOI devices with improved short-channel control |
US6803642B2 (en) | 2001-12-06 | 2004-10-12 | International Business Machines Corporation | Bipolar device having non-uniform depth base-emitter junction |
US7372091B2 (en) * | 2004-01-27 | 2008-05-13 | Micron Technology, Inc. | Selective epitaxy vertical integrated circuit components |
US7504685B2 (en) | 2005-06-28 | 2009-03-17 | Micron Technology, Inc. | Oxide epitaxial isolation |
US7335927B2 (en) * | 2006-01-30 | 2008-02-26 | Internatioanl Business Machines Corporation | Lateral silicided diodes |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
US4234357A (en) * | 1979-07-16 | 1980-11-18 | Trw Inc. | Process for manufacturing emitters by diffusion from polysilicon |
US4252581A (en) * | 1979-10-01 | 1981-02-24 | International Business Machines Corporation | Selective epitaxy method for making filamentary pedestal transistor |
US4338138A (en) * | 1980-03-03 | 1982-07-06 | International Business Machines Corporation | Process for fabricating a bipolar transistor |
US4381953A (en) * | 1980-03-24 | 1983-05-03 | International Business Machines Corporation | Polysilicon-base self-aligned bipolar transistor process |
US4319932A (en) * | 1980-03-24 | 1982-03-16 | International Business Machines Corporation | Method of making high performance bipolar transistor with polysilicon base contacts |
US4484211A (en) * | 1981-02-04 | 1984-11-20 | Matsushita Electric Industrial Co., Ltd. | Oxide walled emitter |
US4539742A (en) * | 1981-06-22 | 1985-09-10 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
NL8105920A (nl) * | 1981-12-31 | 1983-07-18 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
US4507171A (en) * | 1982-08-06 | 1985-03-26 | International Business Machines Corporation | Method for contacting a narrow width PN junction region |
JPS5934660A (ja) * | 1982-08-21 | 1984-02-25 | Mitsubishi Electric Corp | 半導体装置 |
US4521952A (en) * | 1982-12-02 | 1985-06-11 | International Business Machines Corporation | Method of making integrated circuits using metal silicide contacts |
NL8402859A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen. |
JPS61187365A (ja) * | 1985-02-15 | 1986-08-21 | Fujitsu Ltd | 半導体装置の製造方法 |
EP0239652B1 (de) * | 1986-03-22 | 1991-07-24 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem bipolaren Planartransistor |
-
1987
- 1987-05-11 US US07/048,346 patent/US4847670A/en not_active Expired - Fee Related
-
1988
- 1988-03-25 DE DE88104842T patent/DE3884665T2/de not_active Expired - Fee Related
- 1988-03-25 EP EP88104842A patent/EP0290763B1/de not_active Expired - Lifetime
- 1988-04-11 JP JP63087422A patent/JPH0646638B2/ja not_active Expired - Lifetime
- 1988-04-15 BR BR8801815A patent/BR8801815A/pt unknown
- 1988-04-19 CA CA000564542A patent/CA1277780C/en not_active Expired - Fee Related
- 1988-05-06 AU AU15667/88A patent/AU601575B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CA1277780C (en) | 1990-12-11 |
EP0290763A1 (de) | 1988-11-17 |
EP0290763B1 (de) | 1993-10-06 |
AU1566788A (en) | 1988-11-17 |
JPS63292674A (ja) | 1988-11-29 |
AU601575B2 (en) | 1990-09-13 |
JPH0646638B2 (ja) | 1994-06-15 |
DE3884665T2 (de) | 1994-05-11 |
BR8801815A (pt) | 1988-11-29 |
US4847670A (en) | 1989-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |