DE3874949T2 - Heterouebergang-bipolartransistor. - Google Patents

Heterouebergang-bipolartransistor.

Info

Publication number
DE3874949T2
DE3874949T2 DE8888303920T DE3874949T DE3874949T2 DE 3874949 T2 DE3874949 T2 DE 3874949T2 DE 8888303920 T DE8888303920 T DE 8888303920T DE 3874949 T DE3874949 T DE 3874949T DE 3874949 T2 DE3874949 T2 DE 3874949T2
Authority
DE
Germany
Prior art keywords
heterouis
transition
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888303920T
Other languages
English (en)
Other versions
DE3874949D1 (de
Inventor
Hiroji C O Patents Divis Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3874949D1 publication Critical patent/DE3874949D1/de
Application granted granted Critical
Publication of DE3874949T2 publication Critical patent/DE3874949T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
DE8888303920T 1987-04-30 1988-04-29 Heterouebergang-bipolartransistor. Expired - Fee Related DE3874949T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62107352A JP2581071B2 (ja) 1987-04-30 1987-04-30 ヘテロ接合型バイポーラトランジスタ及びその製造方法並びにそれを用いたメモリセル

Publications (2)

Publication Number Publication Date
DE3874949D1 DE3874949D1 (de) 1992-11-05
DE3874949T2 true DE3874949T2 (de) 1993-04-01

Family

ID=14456880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888303920T Expired - Fee Related DE3874949T2 (de) 1987-04-30 1988-04-29 Heterouebergang-bipolartransistor.

Country Status (5)

Country Link
EP (1) EP0289343B1 (de)
JP (1) JP2581071B2 (de)
KR (1) KR0120927B1 (de)
CA (1) CA1315017C (de)
DE (1) DE3874949T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159423A (en) * 1988-11-02 1992-10-27 Hughes Aircraft Company Self-aligned, planar heterojunction bipolar transistor
GB2243716B (en) * 1988-11-02 1993-05-05 Hughes Aircraft Co Self-aligned,planar heterojunction bipolar transistor and method of forming the same
US5068756A (en) * 1989-02-16 1991-11-26 Texas Instruments Incorporated Integrated circuit composed of group III-V compound field effect and bipolar semiconductors
DE4000599A1 (de) * 1990-01-11 1991-07-18 Standard Elektrik Lorenz Ag Heterobipolar-transistor mit reduzierter basis-kollektor-kapazitaet
FR2726125A1 (fr) * 1994-10-25 1996-04-26 Thomson Csf Composant semiconducteur a transistors bipolaires, stabilises thermiquement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268355A (de) * 1961-08-17
DE3016553A1 (de) * 1980-04-29 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Planartransistor, insbesondere fuer i(pfeil hoch)2(pfeil hoch) l-strukturen
EP0197052B1 (de) * 1984-09-21 1989-08-30 AT&T Corp. Eine neue halbleiteranordnung
JPS61187271A (ja) * 1985-02-14 1986-08-20 Sony Corp ヘテロ接合型バイポ−ラトランジスタ

Also Published As

Publication number Publication date
EP0289343B1 (de) 1992-09-30
DE3874949D1 (de) 1992-11-05
CA1315017C (en) 1993-03-23
KR0120927B1 (ko) 1997-10-20
EP0289343A1 (de) 1988-11-02
KR880013256A (ko) 1988-11-30
JP2581071B2 (ja) 1997-02-12
JPS63272076A (ja) 1988-11-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee