DE69125390T2 - Laterale Bipolartransistorstruktur mit integriertem Kontrollschaltkreis und integriertem Leistungstransistor und deren Herstellungsprozess - Google Patents

Laterale Bipolartransistorstruktur mit integriertem Kontrollschaltkreis und integriertem Leistungstransistor und deren Herstellungsprozess

Info

Publication number
DE69125390T2
DE69125390T2 DE69125390T DE69125390T DE69125390T2 DE 69125390 T2 DE69125390 T2 DE 69125390T2 DE 69125390 T DE69125390 T DE 69125390T DE 69125390 T DE69125390 T DE 69125390T DE 69125390 T2 DE69125390 T2 DE 69125390T2
Authority
DE
Germany
Prior art keywords
control circuit
manufacturing process
integrated
lateral bipolar
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125390T
Other languages
English (en)
Other versions
DE69125390D1 (de
Inventor
Raffaele Zambrano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Publication of DE69125390D1 publication Critical patent/DE69125390D1/de
Application granted granted Critical
Publication of DE69125390T2 publication Critical patent/DE69125390T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor
DE69125390T 1991-07-03 1991-07-03 Laterale Bipolartransistorstruktur mit integriertem Kontrollschaltkreis und integriertem Leistungstransistor und deren Herstellungsprozess Expired - Fee Related DE69125390T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP91830294A EP0555496B1 (de) 1991-07-03 1991-07-03 Laterale Bipolartransistorstruktur mit integriertem Kontrollschaltkreis und integriertem Leistungstransistor und deren Herstellungsprozess

Publications (2)

Publication Number Publication Date
DE69125390D1 DE69125390D1 (de) 1997-04-30
DE69125390T2 true DE69125390T2 (de) 1997-08-28

Family

ID=8208962

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125390T Expired - Fee Related DE69125390T2 (de) 1991-07-03 1991-07-03 Laterale Bipolartransistorstruktur mit integriertem Kontrollschaltkreis und integriertem Leistungstransistor und deren Herstellungsprozess

Country Status (4)

Country Link
US (2) US5565701A (de)
EP (1) EP0555496B1 (de)
JP (1) JPH06151723A (de)
DE (1) DE69125390T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994755A (en) * 1991-10-30 1999-11-30 Intersil Corporation Analog-to-digital converter and method of fabrication
EP0685891B1 (de) * 1994-05-31 2001-08-08 STMicroelectronics S.r.l. Integrierte Halbleiterdiode
US5698877A (en) * 1995-10-31 1997-12-16 Gonzalez; Fernando Charge-pumping to increase electron collection efficiency
EP0859456A1 (de) * 1997-02-14 1998-08-19 Koninklijke Philips Electronics N.V. Steuerschaltung für einen Elektromotor
JP3393544B2 (ja) * 1997-02-26 2003-04-07 シャープ株式会社 半導体装置の製造方法
US5965930A (en) * 1997-11-04 1999-10-12 Motorola, Inc. High frequency bipolar transistor and method of forming the same
US6225181B1 (en) 1999-04-19 2001-05-01 National Semiconductor Corp. Trench isolated bipolar transistor structure integrated with CMOS technology
US6383885B1 (en) * 1999-10-27 2002-05-07 Motorola, Inc. Bipolar transistor with improved reverse breakdown characteristics
US6472279B1 (en) * 2001-11-05 2002-10-29 Agere Systems Inc. Method of manufacturing a channel stop implant in a semiconductor device
US6747294B1 (en) 2002-09-25 2004-06-08 Polarfab Llc Guard ring structure for reducing crosstalk and latch-up in integrated circuits
US7138701B2 (en) * 2003-10-02 2006-11-21 International Business Machines Corporation Electrostatic discharge protection networks for triple well semiconductor devices
US20060176638A1 (en) * 2005-02-10 2006-08-10 Fultec Semiconductors, Inc. Minimized wire bonds in transient blocking unit packaging
US7221036B1 (en) * 2005-05-16 2007-05-22 National Semiconductor Corporation BJT with ESD self protection
JP2007158188A (ja) * 2005-12-07 2007-06-21 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5261640B2 (ja) * 2005-12-09 2013-08-14 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置の製造方法
JP2007165370A (ja) * 2005-12-09 2007-06-28 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5766462B2 (ja) * 2011-02-24 2015-08-19 ローム株式会社 半導体装置およびその製造方法
US9281245B2 (en) * 2012-12-28 2016-03-08 Texas Instruments Incorporated Latchup reduction by grown orthogonal substrates
US8999804B2 (en) 2013-05-06 2015-04-07 International Business Machines Corporation Methods for fabricating a bipolar junction transistor with self-aligned terminals
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base
CN105336715B (zh) * 2014-08-12 2018-03-30 中芯国际集成电路制造(上海)有限公司 Pmu泵浦结构及其形成方法
JP6641958B2 (ja) 2015-12-11 2020-02-05 セイコーエプソン株式会社 半導体装置及びその製造方法
JP6679908B2 (ja) * 2015-12-11 2020-04-15 セイコーエプソン株式会社 半導体装置及びその製造方法
CN114628498B (zh) * 2022-05-16 2022-08-26 绍兴中芯集成电路制造股份有限公司 半导体器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR351331A (fr) * 1905-02-01 1905-07-11 Joseph Thau Appareil pour améliorer la combustion dans les foyers
US4110126A (en) * 1977-08-31 1978-08-29 International Business Machines Corporation NPN/PNP Fabrication process with improved alignment
JPS6188561A (ja) * 1984-10-05 1986-05-06 Rohm Co Ltd トランジスタ
IT1214808B (it) * 1984-12-20 1990-01-18 Ates Componenti Elettron Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli
IT1217322B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
FR2634321B1 (fr) * 1988-07-13 1992-04-10 Sgs Thomson Microelectronics Structure de circuit integre ameliorant l'isolement entre composants
US5246871A (en) * 1989-06-16 1993-09-21 Sgs-Thomson Microelectronics S.R.L. Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip

Also Published As

Publication number Publication date
EP0555496B1 (de) 1997-03-26
EP0555496A1 (de) 1993-08-18
US5679587A (en) 1997-10-21
DE69125390D1 (de) 1997-04-30
JPH06151723A (ja) 1994-05-31
US5565701A (en) 1996-10-15

Similar Documents

Publication Publication Date Title
DE69125390D1 (de) Laterale Bipolartransistorstruktur mit integriertem Kontrollschaltkreis und integriertem Leistungstransistor und deren Herstellungsprozess
DE69132570D1 (de) Selbstjustierte Bipolartransistorstruktur und deren Herstellungsprozess
DE69331915D1 (de) MIS-Feldeffekttransistor mit hoher Spannungsfestigkeit und integrierte Halbleiterschaltung
DE68925116D1 (de) In gemischter Technologie hergestellte integrierte Schaltung mit CMOS-Strukturen und leistungsfähigen lateralen Bipolartransistoren mit erhöhter Early-Spannung und Herstellungsverfahren dafür
DE69228408D1 (de) Computer und Speichereinrichtung mit gesteuerter Energiesparschaltung
DE69402221T2 (de) Bipolartransistoren und deren Herstellungsverfahren
EP0504875A3 (en) Bipolar transistor and method of fabricating the same
DE3855603D1 (de) Integrierter bipolarer Hochspannungsleistungstransistor und Niederspannungs-MOS-Transistorstruktur in Emitterumschaltkonfiguration und Herstellungsverfahren
DE69231858T2 (de) Antischmelzsicherungsstruktur mit Seitenwand und Herstellungsverfahren
DE69517140D1 (de) Halbleiterbauelement mit Bipolartransistor mit isolierter Gateelektrode und dessen Herstellungsverfahren
DE69221966D1 (de) Halbleiteranordnung mit verschmolzenen bipolaren und MOS-Transistoren und Herstellungsverfahren
DE69222380T2 (de) Lateraler, bipolarer Transistor mit isolierter Steuerelektrode und entsprechende Mehrfachanordnung
DE69122598D1 (de) Integrierte Struktur eines bipolaren Leistungstransistors und eines Wiederspannungsbipolartransistors in Emittorschaltungs- oder Halbbrückenanordnung und dies bezügliche Herstellungsverfahren
DE69022864T2 (de) Komplementäre Transistorstruktur und deren Herstellungsverfahren.
DE69408248D1 (de) Bipolares Halbleiterbauelement und Herstellungsverfahren
KR910002005A (ko) 바이폴라트랜지스터와 그 제조방법
DE68926387D1 (de) Wärmebeständige Kunststoffpaste sowie damit hergestellte integrierte Schaltungsanordnung
DE3672032D1 (de) Halbleitervorrichtung mit verringerter kapazitiver belastung und deren herstellungsverfahren.
DE69421491T2 (de) Mit Bipolar- und Feldeffekt-Transistoren implementierte integrierte Halbleiterschaltung mit einem stabilen Abfühlverstärker
DE69231543D1 (de) Mikrowellenbipolartransistor mit Heteroübergang, und entsprechende integrierete Schaltung und Herstellungsverfahren
DE69315813T2 (de) Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss
DE69207410D1 (de) Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren
DE69225355D1 (de) Transistor mit einer vorbestimmten Stromverstärkung in einer integrierten Bipolarschaltung
DE69310559D1 (de) Schaltungs-Halbleiterbauteil mit Gate
DE69116471D1 (de) Aktive Einrichtung mit oxydischem Supraleiter und deren Herstellungsprozess

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee