DE69408248D1 - Bipolares Halbleiterbauelement und Herstellungsverfahren - Google Patents

Bipolares Halbleiterbauelement und Herstellungsverfahren

Info

Publication number
DE69408248D1
DE69408248D1 DE69408248T DE69408248T DE69408248D1 DE 69408248 D1 DE69408248 D1 DE 69408248D1 DE 69408248 T DE69408248 T DE 69408248T DE 69408248 T DE69408248 T DE 69408248T DE 69408248 D1 DE69408248 D1 DE 69408248D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
bipolar semiconductor
bipolar
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69408248T
Other languages
English (en)
Other versions
DE69408248T2 (de
Inventor
Yoshiyuki Ishigaki
Hiroki Honda
Kimiharu Uga
Masahiro Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69408248D1 publication Critical patent/DE69408248D1/de
Publication of DE69408248T2 publication Critical patent/DE69408248T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE69408248T 1993-10-04 1994-09-20 Bipolares Halbleiterbauelement und Herstellungsverfahren Expired - Fee Related DE69408248T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5248355A JPH07106452A (ja) 1993-10-04 1993-10-04 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69408248D1 true DE69408248D1 (de) 1998-03-05
DE69408248T2 DE69408248T2 (de) 1998-07-09

Family

ID=17176874

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69408248T Expired - Fee Related DE69408248T2 (de) 1993-10-04 1994-09-20 Bipolares Halbleiterbauelement und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5471085A (de)
EP (1) EP0646952B1 (de)
JP (1) JPH07106452A (de)
KR (1) KR0172985B1 (de)
DE (1) DE69408248T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2756103B1 (fr) * 1996-11-19 1999-05-14 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos et d'un condensateur
FR2756101B1 (fr) * 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Procede de fabrication d'un transistor npn dans une technologie bicmos
FR2756100B1 (fr) 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
JP2001127174A (ja) 1999-10-25 2001-05-11 Mitsubishi Electric Corp 半導体装置
JP3528756B2 (ja) 2000-05-12 2004-05-24 松下電器産業株式会社 半導体装置
US6653708B2 (en) 2000-08-08 2003-11-25 Intersil Americas Inc. Complementary metal oxide semiconductor with improved single event performance
US6656809B2 (en) 2002-01-15 2003-12-02 International Business Machines Corporation Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics
DE10231407B4 (de) * 2002-07-11 2007-01-11 Infineon Technologies Ag Bipolartransistor
JP4786126B2 (ja) * 2003-06-04 2011-10-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7190033B2 (en) * 2004-04-15 2007-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS device and method of manufacture
JP4668764B2 (ja) * 2005-10-25 2011-04-13 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
KR100935269B1 (ko) * 2007-12-27 2010-01-06 주식회사 동부하이텍 이미지 센서 및 그 제조방법
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
US11552169B2 (en) * 2019-03-27 2023-01-10 Intel Corporation Source or drain structures with phosphorous and arsenic co-dopants

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4299024A (en) * 1980-02-25 1981-11-10 Harris Corporation Fabrication of complementary bipolar transistors and CMOS devices with poly gates
IE52791B1 (en) * 1980-11-05 1988-03-02 Fujitsu Ltd Semiconductor devices
JPH0628296B2 (ja) * 1985-10-17 1994-04-13 日本電気株式会社 半導体装置の製造方法
EP0255882A3 (de) * 1986-08-07 1990-05-30 Siemens Aktiengesellschaft npn-Bipolartransistor mit extrem flachen Emitter/Basis-Strukturen und Verfahren zu seiner Herstellung
US5258644A (en) * 1988-02-24 1993-11-02 Hitachi, Ltd. Semiconductor device and method of manufacture thereof
JPH02105464A (ja) * 1988-10-13 1990-04-18 Nec Corp 半導体装置の製造方法
US5150184A (en) * 1989-02-03 1992-09-22 Texas Instruments Incorporated Method for forming emitters in a BiCMOS process
JP2937338B2 (ja) * 1989-02-10 1999-08-23 株式会社東芝 半導体装置
JPH03201528A (ja) * 1989-12-28 1991-09-03 Toshiba Corp 半導体装置及びその製造方法
JPH04152531A (ja) * 1990-10-16 1992-05-26 Fujitsu Ltd 半導体装置の製造方法
KR940003589B1 (ko) * 1991-02-25 1994-04-25 삼성전자 주식회사 BiCMOS 소자의 제조 방법

Also Published As

Publication number Publication date
EP0646952A2 (de) 1995-04-05
DE69408248T2 (de) 1998-07-09
JPH07106452A (ja) 1995-04-21
KR0172985B1 (ko) 1999-02-01
EP0646952B1 (de) 1998-01-28
US5471085A (en) 1995-11-28
EP0646952A3 (de) 1995-12-27
KR950012749A (ko) 1995-05-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee