DE68925116D1 - In gemischter Technologie hergestellte integrierte Schaltung mit CMOS-Strukturen und leistungsfähigen lateralen Bipolartransistoren mit erhöhter Early-Spannung und Herstellungsverfahren dafür - Google Patents

In gemischter Technologie hergestellte integrierte Schaltung mit CMOS-Strukturen und leistungsfähigen lateralen Bipolartransistoren mit erhöhter Early-Spannung und Herstellungsverfahren dafür

Info

Publication number
DE68925116D1
DE68925116D1 DE68925116T DE68925116T DE68925116D1 DE 68925116 D1 DE68925116 D1 DE 68925116D1 DE 68925116 T DE68925116 T DE 68925116T DE 68925116 T DE68925116 T DE 68925116T DE 68925116 D1 DE68925116 D1 DE 68925116D1
Authority
DE
Germany
Prior art keywords
integrated circuit
manufacturing process
bipolar transistors
lateral bipolar
process therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925116T
Other languages
English (en)
Other versions
DE68925116T2 (de
Inventor
Claudio Contiero
Paola Galbiati
Lucia Zullino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE68925116D1 publication Critical patent/DE68925116D1/de
Application granted granted Critical
Publication of DE68925116T2 publication Critical patent/DE68925116T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE68925116T 1989-06-28 1989-06-28 In gemischter Technologie hergestellte integrierte Schaltung mit CMOS-Strukturen und leistungsfähigen lateralen Bipolartransistoren mit erhöhter Early-Spannung und Herstellungsverfahren dafür Expired - Fee Related DE68925116T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89830298A EP0405045B1 (de) 1989-06-28 1989-06-28 In gemischter Technologie hergestellte integrierte Schaltung mit CMOS-Strukturen und leistungsfähigen lateralen Bipolartransistoren mit erhöhter Early-Spannung und Herstellungsverfahren dafür

Publications (2)

Publication Number Publication Date
DE68925116D1 true DE68925116D1 (de) 1996-01-25
DE68925116T2 DE68925116T2 (de) 1996-05-09

Family

ID=8203230

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925116T Expired - Fee Related DE68925116T2 (de) 1989-06-28 1989-06-28 In gemischter Technologie hergestellte integrierte Schaltung mit CMOS-Strukturen und leistungsfähigen lateralen Bipolartransistoren mit erhöhter Early-Spannung und Herstellungsverfahren dafür

Country Status (4)

Country Link
US (1) US5081517A (de)
EP (1) EP0405045B1 (de)
JP (1) JPH0354855A (de)
DE (1) DE68925116T2 (de)

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* Cited by examiner, † Cited by third party
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USRE35442E (en) * 1990-07-06 1997-02-04 Sgs-Thomson Microelectronics, S.R.L. Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof
JP2859760B2 (ja) * 1991-07-26 1999-02-24 ローム株式会社 ラテラルトランジスタおよびその製法
JP3798808B2 (ja) * 1991-09-27 2006-07-19 ハリス・コーポレーション 高いアーリー電壓，高周波性能及び高降伏電壓特性を具備した相補型バイポーラトランジスター及びその製造方法
EP0562217B1 (de) * 1992-03-27 1997-05-28 STMicroelectronics S.r.l. Lateraler Bipolartransistor mit niedrigem Leckstrom zum Substrat, entsprechende integrierte Schaltung und Verfahren zur Herstellung einer solchen integrierten Schaltung
GB9207472D0 (en) * 1992-04-06 1992-05-20 Phoenix Vlsi Consultants Ltd High performance process technology
US5453713A (en) * 1992-07-06 1995-09-26 Digital Equipment Corporation Noise-free analog islands in digital integrated circuits
US5365082A (en) * 1992-09-30 1994-11-15 Texas Instruments Incorporated MOSFET cell array
US5717241A (en) * 1993-12-09 1998-02-10 Northern Telecom Limited Gate controlled lateral bipolar junction transistor
US5422502A (en) * 1993-12-09 1995-06-06 Northern Telecom Limited Lateral bipolar transistor
US5444004A (en) * 1994-04-13 1995-08-22 Winbond Electronics Corporation CMOS process compatible self-alignment lateral bipolar junction transistor
JP3325396B2 (ja) * 1994-08-19 2002-09-17 株式会社東芝 半導体集積回路
US5581112A (en) * 1995-10-23 1996-12-03 Northern Telecom Limited Lateral bipolar transistor having buried base contact
US5786722A (en) * 1996-11-12 1998-07-28 Xerox Corporation Integrated RF switching cell built in CMOS technology and utilizing a high voltage integrated circuit diode with a charge injecting node
DE19709724A1 (de) 1997-03-10 1998-09-24 Siemens Ag Verfahren zur Erzeugung einer Transistorstruktur
KR100235628B1 (ko) * 1997-06-25 1999-12-15 김영환 반도체 소자의 제조방법
US6320245B1 (en) * 1998-05-19 2001-11-20 Nec Corporation Radiation-hardened semiconductor device
US6611044B2 (en) * 1998-09-11 2003-08-26 Koninklijke Philips Electronics N.V. Lateral bipolar transistor and method of making same
DE19943146C1 (de) * 1999-09-09 2001-01-25 Infineon Technologies Ag Brückenschaltung zum Schalten hoher Ströme
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
CN102142456B (zh) * 2010-02-02 2013-02-06 旺宏电子股份有限公司 高增益常数β双极性接合晶体管及其制造方法
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
CN103606537A (zh) * 2013-12-06 2014-02-26 中国电子科技集团公司第四十七研究所 Bicmos集成电路中双极器件的制造方法
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
GB2561391B (en) * 2017-04-13 2020-03-11 Raytheon Systems Ltd Silicon carbide transistor with UV Sensitivity
GB2561388B (en) 2017-04-13 2019-11-06 Raytheon Systems Ltd Silicon carbide integrated circuit
GB2561390B (en) 2017-04-13 2020-03-11 Raytheon Systems Ltd Silicon carbide transistor
US10546852B2 (en) * 2018-05-03 2020-01-28 Qualcomm Incorporated Integrated semiconductor devices and method of fabricating the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
US4812891A (en) * 1987-12-17 1989-03-14 Maxim Integrated Products Bipolar lateral pass-transistor for CMOS circuits

Also Published As

Publication number Publication date
EP0405045B1 (de) 1995-12-13
DE68925116T2 (de) 1996-05-09
US5081517A (en) 1992-01-14
JPH0354855A (ja) 1991-03-08
EP0405045A1 (de) 1991-01-02

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