DE69122598D1 - Integrierte Struktur eines bipolaren Leistungstransistors und eines Wiederspannungsbipolartransistors in Emittorschaltungs- oder Halbbrückenanordnung und dies bezügliche Herstellungsverfahren - Google Patents

Integrierte Struktur eines bipolaren Leistungstransistors und eines Wiederspannungsbipolartransistors in Emittorschaltungs- oder Halbbrückenanordnung und dies bezügliche Herstellungsverfahren

Info

Publication number
DE69122598D1
DE69122598D1 DE69122598T DE69122598T DE69122598D1 DE 69122598 D1 DE69122598 D1 DE 69122598D1 DE 69122598 T DE69122598 T DE 69122598T DE 69122598 T DE69122598 T DE 69122598T DE 69122598 D1 DE69122598 D1 DE 69122598D1
Authority
DE
Germany
Prior art keywords
transistor
bipolar
integrated structure
emitter circuit
bridge arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69122598T
Other languages
English (en)
Other versions
DE69122598T2 (de
Inventor
Santo Puzzolo
Raffaele Zambrano
Mario Paparo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno, SGS Thomson Microelectronics SRL filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Publication of DE69122598D1 publication Critical patent/DE69122598D1/de
Application granted granted Critical
Publication of DE69122598T2 publication Critical patent/DE69122598T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69122598T 1990-12-31 1991-12-18 Integrierte Struktur eines bipolaren Leistungstransistors und eines Wiederspannungsbipolartransistors in Emittorschaltungs- oder Halbbrückenanordnung und dies bezügliche Herstellungsverfahren Expired - Fee Related DE69122598T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02257790A IT1246759B (it) 1990-12-31 1990-12-31 Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.

Publications (2)

Publication Number Publication Date
DE69122598D1 true DE69122598D1 (de) 1996-11-14
DE69122598T2 DE69122598T2 (de) 1997-03-06

Family

ID=11198032

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69122598T Expired - Fee Related DE69122598T2 (de) 1990-12-31 1991-12-18 Integrierte Struktur eines bipolaren Leistungstransistors und eines Wiederspannungsbipolartransistors in Emittorschaltungs- oder Halbbrückenanordnung und dies bezügliche Herstellungsverfahren

Country Status (5)

Country Link
US (2) US5376821A (de)
EP (1) EP0493854B1 (de)
JP (1) JP3166980B2 (de)
DE (1) DE69122598T2 (de)
IT (1) IT1246759B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5866461A (en) * 1990-12-30 1999-02-02 Stmicroelectronics S.R.L. Method for forming an integrated emitter switching configuration using bipolar transistors
DE69315813T2 (de) * 1992-12-28 1998-06-10 Koninkl Philips Electronics Nv Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss
EP0810662A1 (de) * 1996-05-29 1997-12-03 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integriertes Bauteil in Emitterschalteranordnung und mit einer zellularen Struktur
EP0977264B1 (de) * 1998-07-31 2006-04-26 Freescale Semiconductor, Inc. Halbleiterstruktur für Treiberschaltkreise mit Pegelverschiebung
KR100922423B1 (ko) * 2002-09-06 2009-10-16 페어차일드코리아반도체 주식회사 바이폴라 트랜지스터 및 그 제조방법
WO2005020330A1 (de) * 2003-08-13 2005-03-03 Atmel Germany Gmbh Verfahren zur verbesserung elektrischer eigenschaften aktiver bipolarbauelemente
DE102004037186B4 (de) * 2003-08-13 2010-04-15 Atmel Automotive Gmbh Bipolares Halbleiterbauelement mit Kaskodenstruktur und Verfahren zur Herstellung desselben
JP4775683B2 (ja) * 2003-09-29 2011-09-21 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路装置
DE102004037252A1 (de) 2004-07-31 2006-03-23 Atmel Germany Gmbh Verfahren zur Integration von drei Bipolartransistoren in einem Halbleiterkörper, Mehrschichtbauelement und Halbleiteranordnung
DE102004044835B4 (de) 2004-09-14 2008-12-11 Atmel Germany Gmbh Integrierte Halbleiter-Kaskodenschaltung für Hochfrequenzanwendungen
DE102005009725A1 (de) * 2005-03-03 2006-09-07 Atmel Germany Gmbh Verfahren zur Integration von zwei Bipolartransistoren in einen Halbleiterkörper, Halbleiteranordnung in einem Halbleiterkörper und Kaskodenschaltung
FR2919896B1 (fr) * 2007-08-07 2009-10-30 Snecma Sa Turboreacteur comprenant un generateur de courant monte dans la soufflante et un procede de montage dudit generateur dans la soufflante
US8598008B2 (en) * 2010-10-20 2013-12-03 Texas Instruments Incorporated Stacked ESD clamp with reduced variation in clamp voltage
CN109459915B (zh) * 2018-11-06 2022-02-01 恒科科技产业有限公司 一种打印机墨粉耗材制作加工设备及墨粉耗材制作工艺
CN116153992B (zh) * 2023-04-21 2023-06-23 上海陆芯电子科技有限公司 一种逆导型绝缘栅双极型晶体管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4458158A (en) * 1979-03-12 1984-07-03 Sprague Electric Company IC Including small signal and power devices
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
IT1217322B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
EP0347550A3 (de) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Verfahren zur Herstellung von isolierten vertikalen und superverstärkenden Bipolar-Transistoren
IT1234252B (it) * 1989-06-16 1992-05-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione

Also Published As

Publication number Publication date
JPH0613556A (ja) 1994-01-21
JP3166980B2 (ja) 2001-05-14
EP0493854A1 (de) 1992-07-08
EP0493854B1 (de) 1996-10-09
IT9022577A1 (it) 1992-07-01
US5376821A (en) 1994-12-27
IT1246759B (it) 1994-11-26
US5500551A (en) 1996-03-19
IT9022577A0 (it) 1990-12-31
DE69122598T2 (de) 1997-03-06

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