IT1234252B - Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione - Google Patents

Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione

Info

Publication number
IT1234252B
IT1234252B IT8906610A IT661089A IT1234252B IT 1234252 B IT1234252 B IT 1234252B IT 8906610 A IT8906610 A IT 8906610A IT 661089 A IT661089 A IT 661089A IT 1234252 B IT1234252 B IT 1234252B
Authority
IT
Italy
Prior art keywords
control circuit
semiconductor device
manufacturing process
device including
current flow
Prior art date
Application number
IT8906610A
Other languages
English (en)
Other versions
IT8906610A0 (it
Inventor
Zambrano Raffaele
Musumeci Salvatore
Raciti Salvatore
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8906610A priority Critical patent/IT1234252B/it
Publication of IT8906610A0 publication Critical patent/IT8906610A0/it
Priority to EP90201505A priority patent/EP0403016B1/en
Priority to DE69031610T priority patent/DE69031610T2/de
Priority to JP02154121A priority patent/JP3083831B2/ja
Priority to US07/537,940 priority patent/US5119161A/en
Priority to US07/805,048 priority patent/US5246871A/en
Application granted granted Critical
Publication of IT1234252B publication Critical patent/IT1234252B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
IT8906610A 1989-06-16 1989-06-16 Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione IT1234252B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT8906610A IT1234252B (it) 1989-06-16 1989-06-16 Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione
EP90201505A EP0403016B1 (en) 1989-06-16 1990-06-12 Semiconductor device comprising a control circuit and a power stage with vertical current flow, integrated in monolithic form in the same chip, and related manufacturing process
DE69031610T DE69031610T2 (de) 1989-06-16 1990-06-12 Monolitisch integrierte Halbleitervorrichtung, die eine Kontrollschaltung und einen Leistungsteil mit vertikalem Stromfluss umfasst, und Verfahren zu ihrer Herstellung
JP02154121A JP3083831B2 (ja) 1989-06-16 1990-06-14 半導体装置及びその製造方法
US07/537,940 US5119161A (en) 1989-06-16 1990-06-14 Semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip
US07/805,048 US5246871A (en) 1989-06-16 1991-12-11 Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8906610A IT1234252B (it) 1989-06-16 1989-06-16 Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione

Publications (2)

Publication Number Publication Date
IT8906610A0 IT8906610A0 (it) 1989-06-16
IT1234252B true IT1234252B (it) 1992-05-14

Family

ID=11121377

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8906610A IT1234252B (it) 1989-06-16 1989-06-16 Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione

Country Status (5)

Country Link
US (1) US5119161A (it)
EP (1) EP0403016B1 (it)
JP (1) JP3083831B2 (it)
DE (1) DE69031610T2 (it)
IT (1) IT1234252B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
IT1246759B (it) * 1990-12-31 1994-11-26 Sgs Thomson Microelectronics Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.
EP0683521B1 (en) * 1994-05-19 2002-08-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power integrated circuit ("PIC") structure, and manufacturing process thereof
EP0751573A1 (en) * 1995-06-30 1997-01-02 STMicroelectronics S.r.l. Integrated power circuit and corresponding manufacturing process
DE69931890T2 (de) 1999-04-06 2007-01-11 Stmicroelectronics S.R.L., Agrate Brianza Integrierter Leistungsschaltkreis mit vertikalem Stromfluss und dessen Herstellungsverfahren
JP5048242B2 (ja) * 2005-11-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1592856A (en) * 1976-11-27 1981-07-08 Ferranti Ltd Semiconductor devices
US4641172A (en) * 1982-08-26 1987-02-03 Mitsubishi Denki Kabushiki Kaisha Buried PN junction isolation regions for high power semiconductor devices
JPS60117765A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
JPS63204640A (ja) * 1987-02-20 1988-08-24 Hitachi Ltd 半導体装置とその製造方法
US4734382A (en) * 1987-02-20 1988-03-29 Fairchild Semiconductor Corporation BiCMOS process having narrow bipolar emitter and implanted aluminum isolation
IT1221587B (it) * 1987-09-07 1990-07-12 S G S Microelettronics Spa Procedimento di fabbricazione di un dispositivo integrato monolitico a semiconduttore avente strati epitas siali a bassa concentrazione di impurita'
IT1217322B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina

Also Published As

Publication number Publication date
EP0403016A3 (en) 1991-12-04
US5119161A (en) 1992-06-02
EP0403016A2 (en) 1990-12-19
JPH0342866A (ja) 1991-02-25
EP0403016B1 (en) 1997-10-22
DE69031610T2 (de) 1998-03-12
JP3083831B2 (ja) 2000-09-04
DE69031610D1 (de) 1997-11-27
IT8906610A0 (it) 1989-06-16

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628