IT1246759B - Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione. - Google Patents

Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.

Info

Publication number
IT1246759B
IT1246759B IT02257790A IT2257790A IT1246759B IT 1246759 B IT1246759 B IT 1246759B IT 02257790 A IT02257790 A IT 02257790A IT 2257790 A IT2257790 A IT 2257790A IT 1246759 B IT1246759 B IT 1246759B
Authority
IT
Italy
Prior art keywords
transistor
bridge
semi
configurations
low voltage
Prior art date
Application number
IT02257790A
Other languages
English (en)
Other versions
IT9022577A1 (it
IT9022577A0 (it
Inventor
Santo Puzzolo
Raffaele Zambrano
Mario Paparo
Original Assignee
Sgs Thomson Microelectronics
Cons Ric Microelettronica
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics, Cons Ric Microelettronica filed Critical Sgs Thomson Microelectronics
Priority to IT02257790A priority Critical patent/IT1246759B/it
Publication of IT9022577A0 publication Critical patent/IT9022577A0/it
Priority to JP30482391A priority patent/JP3166980B2/ja
Priority to EP91203337A priority patent/EP0493854B1/en
Priority to DE69122598T priority patent/DE69122598T2/de
Priority to US07/812,704 priority patent/US5376821A/en
Publication of IT9022577A1 publication Critical patent/IT9022577A1/it
Priority to US08/273,589 priority patent/US5500551A/en
Application granted granted Critical
Publication of IT1246759B publication Critical patent/IT1246759B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT02257790A 1990-12-31 1990-12-31 Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione. IT1246759B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT02257790A IT1246759B (it) 1990-12-31 1990-12-31 Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.
JP30482391A JP3166980B2 (ja) 1990-12-31 1991-11-20 集積構造及びその製造方法
EP91203337A EP0493854B1 (en) 1990-12-31 1991-12-18 Integrated structure of a bipolar power transistor and a low voltage bipolar transistor in the emitter switching or semibridge configurations and associated manufacturing processes
DE69122598T DE69122598T2 (de) 1990-12-31 1991-12-18 Integrierte Struktur eines bipolaren Leistungstransistors und eines Wiederspannungsbipolartransistors in Emittorschaltungs- oder Halbbrückenanordnung und dies bezügliche Herstellungsverfahren
US07/812,704 US5376821A (en) 1990-12-31 1991-12-23 Integrated emitter switching configuration using bipolar transistors
US08/273,589 US5500551A (en) 1990-12-31 1994-07-11 Integrated emitter switching configuration using bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02257790A IT1246759B (it) 1990-12-31 1990-12-31 Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.

Publications (3)

Publication Number Publication Date
IT9022577A0 IT9022577A0 (it) 1990-12-31
IT9022577A1 IT9022577A1 (it) 1992-07-01
IT1246759B true IT1246759B (it) 1994-11-26

Family

ID=11198032

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02257790A IT1246759B (it) 1990-12-31 1990-12-31 Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.

Country Status (5)

Country Link
US (2) US5376821A (it)
EP (1) EP0493854B1 (it)
JP (1) JP3166980B2 (it)
DE (1) DE69122598T2 (it)
IT (1) IT1246759B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5866461A (en) * 1990-12-30 1999-02-02 Stmicroelectronics S.R.L. Method for forming an integrated emitter switching configuration using bipolar transistors
DE69315813T2 (de) * 1992-12-28 1998-06-10 Koninkl Philips Electronics Nv Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss
EP0810662A1 (en) * 1996-05-29 1997-12-03 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno An integrated device in an "emitter switching" configuration and with a cellular structure
EP0977264B1 (en) * 1998-07-31 2006-04-26 Freescale Semiconductor, Inc. Semiconductor structure for driver circuits with level shifting
KR100922423B1 (ko) * 2002-09-06 2009-10-16 페어차일드코리아반도체 주식회사 바이폴라 트랜지스터 및 그 제조방법
EP1654768A1 (de) * 2003-08-13 2006-05-10 ATMEL Germany GmbH Verfahren zur verbesserung elektrischer eigenschaften aktiver bipolarbauelemente
DE102004037186B4 (de) * 2003-08-13 2010-04-15 Atmel Automotive Gmbh Bipolares Halbleiterbauelement mit Kaskodenstruktur und Verfahren zur Herstellung desselben
JP4775683B2 (ja) * 2003-09-29 2011-09-21 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路装置
DE102004037252A1 (de) 2004-07-31 2006-03-23 Atmel Germany Gmbh Verfahren zur Integration von drei Bipolartransistoren in einem Halbleiterkörper, Mehrschichtbauelement und Halbleiteranordnung
DE102004044835B4 (de) 2004-09-14 2008-12-11 Atmel Germany Gmbh Integrierte Halbleiter-Kaskodenschaltung für Hochfrequenzanwendungen
DE102005009725A1 (de) 2005-03-03 2006-09-07 Atmel Germany Gmbh Verfahren zur Integration von zwei Bipolartransistoren in einen Halbleiterkörper, Halbleiteranordnung in einem Halbleiterkörper und Kaskodenschaltung
FR2919896B1 (fr) * 2007-08-07 2009-10-30 Snecma Sa Turboreacteur comprenant un generateur de courant monte dans la soufflante et un procede de montage dudit generateur dans la soufflante
US8598008B2 (en) * 2010-10-20 2013-12-03 Texas Instruments Incorporated Stacked ESD clamp with reduced variation in clamp voltage
CN109459915B (zh) * 2018-11-06 2022-02-01 恒科科技产业有限公司 一种打印机墨粉耗材制作加工设备及墨粉耗材制作工艺
CN116153992B (zh) * 2023-04-21 2023-06-23 上海陆芯电子科技有限公司 一种逆导型绝缘栅双极型晶体管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4458158A (en) * 1979-03-12 1984-07-03 Sprague Electric Company IC Including small signal and power devices
IT1217322B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
EP0347550A3 (en) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors
IT1234252B (it) * 1989-06-16 1992-05-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione

Also Published As

Publication number Publication date
IT9022577A1 (it) 1992-07-01
EP0493854A1 (en) 1992-07-08
EP0493854B1 (en) 1996-10-09
JPH0613556A (ja) 1994-01-21
DE69122598T2 (de) 1997-03-06
JP3166980B2 (ja) 2001-05-14
US5500551A (en) 1996-03-19
US5376821A (en) 1994-12-27
DE69122598D1 (de) 1996-11-14
IT9022577A0 (it) 1990-12-31

Similar Documents

Publication Publication Date Title
IT1246759B (it) Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.
IT1217323B (it) Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
EP0279403A3 (en) Vertical mos field effect transistor having a high withstand voltage and a high switching speed
IT1235843B (it) Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.
MA22296A1 (fr) Compositions detergentes contenant des tensioactifs amide d'acide gras polyhydroxyle et alkylestersulfonate
BR9909129A (pt) Conjugados de proteases
IT8621817A1 (it) Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
IT1251787B (it) Dispositivo semiconduttore e metodo per la sua fabbricazione
IT1201848B (it) Circuito di interfaccia logica ad alta stabilita' e bassa corrente di riposo
EP0166581A3 (en) Cmos circuit overvoltage protection
DE68923017D1 (de) Bipolar- und CMOS-Transistoren verwendende integrierte Halbleiterschaltung.
DE69019274D1 (de) Herstellung von aus polykristallinem Silizium bestehenden Dünnschichten und damit hergestellte Transistoren.
ITMI911994A0 (it) Circuito integrato regolatore di tensione ad elevata stabilita' e basso consumo di corrente
DE69320033D1 (de) Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors
ITTO910205A0 (it) Produzione di fibra poliestere di elevata tenacita' e basso restringi-mento.
IT1219511B (it) Dispositivo per il sostegno senza palo centrale e l'aperatura ad arganetto di grandi ombrelloni da sole e simili
DE69421491D1 (de) Mit Bipolar- und Feldeffekt-Transistoren implementierte integrierte Halbleiterschaltung mit einem stabilen Abfühlverstärker
ITMI910836A0 (it) Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione.
IT8683611A0 (it) Struttura npn equivalente con tensione di rottura maggiorata rispetto alla tensione di rottura intrinseca dell'npn.
JPS5640272A (en) Semiconductor integrated circuit
ATE81134T1 (de) Peptide.
DE69027463D1 (de) MOS-Feldeffekttransistor mit hoher Durchbruchsspannung
IT1213490B (it) Dispositivo a semiconduttori avente una struttura di contatti apressione per l'impiego in applicazioni di alta potenza.
JPS6482556A (en) Semiconductor device
JPS5640279A (en) Semiconductor integrated circuit

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227