IT1213490B - Dispositivo a semiconduttori avente una struttura di contatti apressione per l'impiego in applicazioni di alta potenza. - Google Patents

Dispositivo a semiconduttori avente una struttura di contatti apressione per l'impiego in applicazioni di alta potenza.

Info

Publication number
IT1213490B
IT1213490B IT2165586A IT2165586A IT1213490B IT 1213490 B IT1213490 B IT 1213490B IT 2165586 A IT2165586 A IT 2165586A IT 2165586 A IT2165586 A IT 2165586A IT 1213490 B IT1213490 B IT 1213490B
Authority
IT
Italy
Prior art keywords
semiconductor device
high power
power applications
contacts opening
contacts
Prior art date
Application number
IT2165586A
Other languages
English (en)
Other versions
IT8621655A0 (it
Inventor
Hiroyasu Hagino
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of IT8621655A0 publication Critical patent/IT8621655A0/it
Application granted granted Critical
Publication of IT1213490B publication Critical patent/IT1213490B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
  • Thyristors (AREA)
IT2165586A 1985-09-20 1986-09-09 Dispositivo a semiconduttori avente una struttura di contatti apressione per l'impiego in applicazioni di alta potenza. IT1213490B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20940785A JPH079919B2 (ja) 1985-09-20 1985-09-20 半導体装置

Publications (2)

Publication Number Publication Date
IT8621655A0 IT8621655A0 (it) 1986-09-09
IT1213490B true IT1213490B (it) 1989-12-20

Family

ID=16572372

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2165586A IT1213490B (it) 1985-09-20 1986-09-09 Dispositivo a semiconduttori avente una struttura di contatti apressione per l'impiego in applicazioni di alta potenza.

Country Status (4)

Country Link
EP (1) EP0238665A1 (it)
JP (1) JPH079919B2 (it)
IT (1) IT1213490B (it)
WO (1) WO1987001866A1 (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040051A (en) * 1988-12-05 1991-08-13 Sundstrand Corporation Hydrostatic clamp and method for compression type power semiconductors
DE58905844D1 (de) * 1989-02-02 1993-11-11 Asea Brown Boveri Druckkontaktiertes Halbleiterbauelement.
JPH0744264B2 (ja) * 1989-10-31 1995-05-15 株式会社東芝 圧接型半導体装置
US5210601A (en) * 1989-10-31 1993-05-11 Kabushiki Kaisha Toshiba Compression contacted semiconductor device and method for making of the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099201A (en) * 1977-04-11 1978-07-04 General Electric Company Semiconductor rectifier assembly having an insulating material therein that evolves gases when exposed to an arc
JPS56153767A (en) * 1980-04-28 1981-11-27 Mitsubishi Electric Corp Manufacture of planar type thyristor
JPS5778178A (en) * 1980-11-04 1982-05-15 Toshiba Corp Input protective circuit
FR2517471B1 (fr) * 1981-12-02 1985-08-02 Silicium Semiconducteur Ssc Montage en boitier presse de composants de puissance a structure d'electrodes ramifiee
JPS59218774A (ja) * 1983-05-26 1984-12-10 Nec Corp サイリスタ

Also Published As

Publication number Publication date
JPH079919B2 (ja) 1995-02-01
WO1987001866A1 (en) 1987-03-26
IT8621655A0 (it) 1986-09-09
EP0238665A1 (en) 1987-09-30
JPS6269522A (ja) 1987-03-30

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929