IT8421688A0 - Procedimento e dispositivo per diffondere una o una pluralita' di impurita' in un corpo di semiconduttore. - Google Patents

Procedimento e dispositivo per diffondere una o una pluralita' di impurita' in un corpo di semiconduttore.

Info

Publication number
IT8421688A0
IT8421688A0 IT8421688A IT2168884A IT8421688A0 IT 8421688 A0 IT8421688 A0 IT 8421688A0 IT 8421688 A IT8421688 A IT 8421688A IT 2168884 A IT2168884 A IT 2168884A IT 8421688 A0 IT8421688 A0 IT 8421688A0
Authority
IT
Italy
Prior art keywords
diffusing
impurities
procedure
semiconductor body
semiconductor
Prior art date
Application number
IT8421688A
Other languages
English (en)
Other versions
IT1234946B (it
Inventor
Laszlo Szolgyemy
Original Assignee
Mitel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Corp filed Critical Mitel Corp
Publication of IT8421688A0 publication Critical patent/IT8421688A0/it
Application granted granted Critical
Publication of IT1234946B publication Critical patent/IT1234946B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
IT8421688A 1984-05-18 1984-06-29 Procedimento e dispositivo per diffondere una o una pluralita' di impurita' in un corpo di semiconduttore. IT1234946B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000454727A CA1203921A (en) 1984-05-18 1984-05-18 Diffusion method to produce semiconductor devices

Publications (2)

Publication Number Publication Date
IT8421688A0 true IT8421688A0 (it) 1984-06-29
IT1234946B IT1234946B (it) 1992-06-02

Family

ID=4127900

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8421688A IT1234946B (it) 1984-05-18 1984-06-29 Procedimento e dispositivo per diffondere una o una pluralita' di impurita' in un corpo di semiconduttore.

Country Status (7)

Country Link
US (1) US4939103A (it)
JP (1) JPS60245218A (it)
CA (1) CA1203921A (it)
DE (1) DE3430009C2 (it)
FR (1) FR2565734A1 (it)
GB (1) GB2158992B (it)
IT (1) IT1234946B (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239939A (ja) * 1987-03-27 1988-10-05 Toshiba Corp 半導体基体内への不純物導入方法及び装置
EP0417456A3 (en) * 1989-08-11 1991-07-03 Seiko Instruments Inc. Method of producing semiconductor device
JP3079575B2 (ja) * 1990-12-20 2000-08-21 株式会社日立製作所 半導体装置の製造方法
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
US5188986A (en) * 1991-05-17 1993-02-23 United Microelectronics Corporation Hydrogen peroxide in basic solution to clean polycrystalline silicon after phosphorous diffusion
US5324684A (en) * 1992-02-25 1994-06-28 Ag Processing Technologies, Inc. Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure
US5242859A (en) * 1992-07-14 1993-09-07 International Business Machines Corporation Highly doped semiconductor material and method of fabrication thereof
US5599735A (en) * 1994-08-01 1997-02-04 Texas Instruments Incorporated Method for doped shallow junction formation using direct gas-phase doping
JP4655321B2 (ja) * 1999-08-27 2011-03-23 東京エレクトロン株式会社 熱処理方法
JP4812147B2 (ja) * 1999-09-07 2011-11-09 株式会社日立製作所 太陽電池の製造方法
JP3706811B2 (ja) * 2000-06-14 2005-10-19 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、及び半導体製造装置
US6413844B1 (en) * 2001-01-10 2002-07-02 Asm International N.V. Safe arsenic gas phase doping
US6815736B2 (en) 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
FR2824663B1 (fr) * 2001-05-14 2004-10-01 Semco Sa Procede et dispositif de dopage, diffusion et oxydation pyrolithique de plaquettes de silicium a pression reduite
US6615615B2 (en) 2001-06-29 2003-09-09 Lightwave Microsystems Corporation GePSG core for a planar lightwave circuit
US6750482B2 (en) 2002-04-30 2004-06-15 Rf Micro Devices, Inc. Highly conductive semiconductor layer having two or more impurities
CN102074448B (zh) * 2009-11-20 2014-09-24 同方威视技术股份有限公司 离子迁移谱仪以及提高其检测灵敏度的方法
CA2813812C (en) 2010-03-08 2016-08-23 Alliance For Sustainable Energy, Llc Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3753809A (en) * 1970-01-09 1973-08-21 Ibm Method for obtaining optimum phosphorous concentration in semiconductor wafers
US3829382A (en) * 1970-09-02 1974-08-13 Monsanto Co Doping control for semiconductor materials
US3916034A (en) * 1971-05-21 1975-10-28 Hitachi Ltd Method of transporting substances in a plasma stream to and depositing it on a target
US3764414A (en) * 1972-05-01 1973-10-09 Ibm Open tube diffusion in iii-v compunds
US3949119A (en) * 1972-05-04 1976-04-06 Atomic Energy Of Canada Limited Method of gas doping of vacuum evaporated epitaxial silicon films
JPS49114355A (it) * 1973-02-28 1974-10-31
JPS50102261A (it) * 1974-01-09 1975-08-13
JPS5236820A (en) * 1975-09-16 1977-03-22 Ouchi Nobutoshi Method of making granular glass wall
US4204893A (en) * 1979-02-16 1980-05-27 Bell Telephone Laboratories, Incorporated Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source
US4233093A (en) * 1979-04-12 1980-11-11 Pel Chow Process for the manufacture of PNP transistors high power
JPS577131A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of p-n junction
JPS5737824A (en) * 1980-08-20 1982-03-02 Seiko Epson Corp Method and device for impurity diffusion
DE3267491D1 (en) * 1981-03-02 1986-01-02 Bbc Brown Boveri & Cie Process for doping semiconductor bodies for the production of semiconductor devices
US4618381A (en) * 1983-05-26 1986-10-21 Fuji Electric Corporate Research And Development Ltd. Method for adding impurities to semiconductor base material

Also Published As

Publication number Publication date
CA1203921A (en) 1986-04-29
FR2565734A1 (fr) 1985-12-13
US4939103A (en) 1990-07-03
GB8426023D0 (en) 1984-11-21
JPS60245218A (ja) 1985-12-05
IT1234946B (it) 1992-06-02
DE3430009A1 (de) 1985-11-21
GB2158992B (en) 1987-09-30
GB2158992A (en) 1985-11-20
DE3430009C2 (de) 1994-01-20

Similar Documents

Publication Publication Date Title
IT8421688A0 (it) Procedimento e dispositivo per diffondere una o una pluralita' di impurita' in un corpo di semiconduttore.
DE3585309D1 (de) "chip-on-chip" halbleitergeraet.
DE3773624D1 (de) Geraet sowie anschlussteil dafuer.
IT1153379B (it) Procedimento per la formazione di caratteristiche d'ordine sub-micron in dispositivi a semiconduttori
IT8222292A0 (it) Dispositivo per la rivelazione di radiazioni e dispositivo semiconduttore per l'impiego in tale dispositivo.
FR2586862B1 (fr) Dispositif a semiconducteur en particulier du type mosfet.
IT1225624B (it) Procedimento per formare contatti metallo-semiconduttore autoallineatiin dispositivi integrati contenenti strutture misfet
DE68921368D1 (de) Gate-Abschalthalbleitereinrichtung.
DE3584799D1 (de) Halbleitervorrichtung.
EP0431971A3 (en) Photosensitive composition and resin-encapsulated semiconductor device
EP0166112A3 (en) Semiconductor device with bonding pads surrounded by source and/or drain regions
DE69009626T2 (de) Masterslice-Halbleitervorrichtung.
IT8421623A0 (it) Dispositivo per la protezione di una superficie, durante il trattamento chimico dell'opposta superficie, di elementi lenticolari in genere e di fette di silicio in particolare.
GB2168846B (en) Semiconductor device having multi-thickness metallization and process for the fabrication thereof
DE3586568T2 (de) Halbleitereinrichtung.
IT8921898A0 (it) Procedimento e dispositivo per l'applicazione di fascette su confezioni.
NL193883B (nl) Geïntegreerde halfgeleiderinrichting.
EP0361283A3 (en) Resin-sealed type semiconductor device and method for manufacturing the same
IT1163326B (it) Dispositivo d'azionamento di valvola
ES511412A0 (es) "perfeccionamientos en aparatos elevadores".
KR890013797A (ko) 반도체장치와 그 사용방법
IT8547677A1 (it) Dispositivo e semiconduttore in particolare circuito darlington bipolare -mos integrato
IT8520173A0 (it) Dispositivo per l'elaborazione disegnali elettrooculografici.
IT8806627A0 (it) Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti
DE3579235D1 (de) Halbleiteranordnung und einrichtung.