FR2586862B1 - Dispositif a semiconducteur en particulier du type mosfet. - Google Patents

Dispositif a semiconducteur en particulier du type mosfet.

Info

Publication number
FR2586862B1
FR2586862B1 FR868612130A FR8612130A FR2586862B1 FR 2586862 B1 FR2586862 B1 FR 2586862B1 FR 868612130 A FR868612130 A FR 868612130A FR 8612130 A FR8612130 A FR 8612130A FR 2586862 B1 FR2586862 B1 FR 2586862B1
Authority
FR
France
Prior art keywords
semiconductor device
mosfet type
mosfet
type
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR868612130A
Other languages
English (en)
Other versions
FR2586862A1 (fr
Inventor
Gourab Majumdar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19073585A external-priority patent/JPS6248073A/ja
Priority claimed from JP60190734A external-priority patent/JPH0715998B2/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2586862A1 publication Critical patent/FR2586862A1/fr
Application granted granted Critical
Publication of FR2586862B1 publication Critical patent/FR2586862B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR868612130A 1985-08-27 1986-08-27 Dispositif a semiconducteur en particulier du type mosfet. Expired - Fee Related FR2586862B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19073585A JPS6248073A (ja) 1985-08-27 1985-08-27 半導体装置
JP60190734A JPH0715998B2 (ja) 1985-08-27 1985-08-27 半導体装置

Publications (2)

Publication Number Publication Date
FR2586862A1 FR2586862A1 (fr) 1987-03-06
FR2586862B1 true FR2586862B1 (fr) 1991-04-19

Family

ID=26506271

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868612130A Expired - Fee Related FR2586862B1 (fr) 1985-08-27 1986-08-27 Dispositif a semiconducteur en particulier du type mosfet.

Country Status (3)

Country Link
US (1) US4841345A (fr)
DE (1) DE3628857A1 (fr)
FR (1) FR2586862B1 (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680832B2 (ja) * 1987-09-30 1994-10-12 日本電気株式会社 半導体装置
DE3856173D1 (de) * 1987-10-21 1998-06-10 Siemens Ag Verfahren zum Herstellen eines Bipolartransistors mit isolierter Gateelektrode
JPH07109882B2 (ja) * 1988-02-26 1995-11-22 三菱電機株式会社 バイポーラ型半導体スイッチング装置
US5159425A (en) * 1988-06-08 1992-10-27 Ixys Corporation Insulated gate device with current mirror having bi-directional capability
EP0366916B1 (fr) * 1988-10-04 1995-06-14 Kabushiki Kaisha Toshiba Dispositif semi-conducteur à anode court-circuitée et méthodes de fabrication
DE68926384T2 (de) * 1988-11-29 1996-10-10 Toshiba Kawasaki Kk Lateraler Leitfähigkeitsmodulations-MOSFET
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
EP0409010A1 (fr) * 1989-07-19 1991-01-23 Asea Brown Boveri Ag Dispositif semi-conducteur de puissance, à extinction
JPH03155677A (ja) * 1989-08-19 1991-07-03 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP2663679B2 (ja) * 1990-04-20 1997-10-15 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
DE4114349C2 (de) * 1990-05-10 2001-05-31 Fuji Electric Co Ltd Bipolartransistor mit isoliertem Gate (IGBT)
US5291050A (en) * 1990-10-31 1994-03-01 Fuji Electric Co., Ltd. MOS device having reduced gate-to-drain capacitance
US5141889A (en) * 1990-11-30 1992-08-25 Motorola, Inc. Method of making enhanced insulated gate bipolar transistor
JP2782638B2 (ja) * 1990-12-28 1998-08-06 富士電機株式会社 Ｍｏｓコントロールサイリスタ
US5475243A (en) * 1991-07-02 1995-12-12 Fuji Electric Co., Ltd. Semiconductor device including an IGBT and a current-regenerative diode
DE4125074A1 (de) * 1991-07-29 1993-02-11 Siemens Ag Durch feldeffekt steuerbares halbleiterbauelement
JPH05114737A (ja) * 1991-10-24 1993-05-07 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP2810821B2 (ja) * 1992-03-30 1998-10-15 三菱電機株式会社 半導体装置及びその製造方法
US5349212A (en) * 1992-06-01 1994-09-20 Fuji Electric Co., Ltd. Semiconductor device having thyristor structure
FR2700418B1 (fr) * 1993-01-12 1995-04-07 France Telecom Composant électronique capable de résistance dynamique négative et procédé de fabrication correspondant.
JP2011023527A (ja) * 2009-07-15 2011-02-03 Toshiba Corp 半導体装置
TWI404205B (zh) * 2009-10-06 2013-08-01 Anpec Electronics Corp 絕緣閘雙極電晶體與快速逆向恢復時間整流器之整合結構及其製作方法
JP2013235890A (ja) * 2012-05-07 2013-11-21 Denso Corp 半導体装置
CN112310207A (zh) * 2019-08-01 2021-02-02 广东美的白色家电技术创新中心有限公司 绝缘栅双极型晶体管及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE643783A (fr) * 1963-02-19 1964-05-29 Forges Et Ateliers De Constructions Electriques De Jeumont Dispositif de commutation de puissance à semi-conducteur
GB1558840A (en) * 1977-02-07 1980-01-09 Rca Corp Gate controlled semiconductor device
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
GB2050694B (en) * 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
SE8107136L (sv) * 1980-12-02 1982-06-03 Gen Electric Styrelektrodforsedd likriktaranordning
IE53895B1 (en) * 1981-11-23 1989-04-12 Gen Electric Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
JPS594077A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 電界効果トランジスタ
JPS605568A (ja) * 1983-06-23 1985-01-12 Sanken Electric Co Ltd 縦型絶縁ゲ−ト電界効果トランジスタ
GB2150753B (en) * 1983-11-30 1987-04-01 Toshiba Kk Semiconductor device

Also Published As

Publication number Publication date
DE3628857C2 (fr) 1992-02-13
FR2586862A1 (fr) 1987-03-06
DE3628857A1 (de) 1987-03-12
US4841345A (en) 1989-06-20

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Legal Events

Date Code Title Description
ST Notification of lapse