KR890017810A - 낮은 내부동작전압을 갖는 반도체장치 - Google Patents
낮은 내부동작전압을 갖는 반도체장치Info
- Publication number
- KR890017810A KR890017810A KR1019890003381A KR890003381A KR890017810A KR 890017810 A KR890017810 A KR 890017810A KR 1019890003381 A KR1019890003381 A KR 1019890003381A KR 890003381 A KR890003381 A KR 890003381A KR 890017810 A KR890017810 A KR 890017810A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- operating voltage
- low internal
- internal operating
- low
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-125742 | 1988-05-25 | ||
| JP63125742A JPH01296491A (ja) | 1988-05-25 | 1988-05-25 | 基準電圧発生回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR890017810A true KR890017810A (ko) | 1989-12-18 |
| KR0132431B1 KR0132431B1 (ko) | 1998-04-11 |
Family
ID=14917669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890003381A KR0132431B1 (ko) | 1988-05-25 | 1989-03-18 | 낮은 내부동작전압을 갖는 반도체장치 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH01296491A (ko) |
| KR (1) | KR0132431B1 (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218606A (ja) * | 1988-07-06 | 1990-01-22 | Nec Ic Microcomput Syst Ltd | 定電流回路 |
| KR920004587B1 (ko) * | 1989-10-24 | 1992-06-11 | 삼성전자 주식회사 | 메모리장치의 기준전압 안정화회로 |
| JP2682725B2 (ja) * | 1990-06-04 | 1997-11-26 | 松下電器産業株式会社 | 半導体装置 |
| KR940017214A (ko) * | 1992-12-24 | 1994-07-26 | 가나이 쓰토무 | 기준전압 발생회로 |
| JP3139542B2 (ja) | 1998-01-28 | 2001-03-05 | 日本電気株式会社 | 参照電圧発生回路 |
| JP3202196B2 (ja) | 1998-08-25 | 2001-08-27 | 沖電気工業株式会社 | 出力回路と入力回路 |
| JP4919776B2 (ja) * | 2006-11-17 | 2012-04-18 | 新日本無線株式会社 | 基準電圧回路 |
| JP2008197994A (ja) * | 2007-02-14 | 2008-08-28 | Oki Electric Ind Co Ltd | 起動回路 |
| JP4837111B2 (ja) * | 2009-03-02 | 2011-12-14 | 株式会社半導体理工学研究センター | 基準電流源回路 |
| JP6688648B2 (ja) * | 2016-03-25 | 2020-04-28 | エイブリック株式会社 | 電流検出回路 |
| JP6854942B2 (ja) * | 2020-04-03 | 2021-04-07 | エイブリック株式会社 | 電流検出回路 |
-
1988
- 1988-05-25 JP JP63125742A patent/JPH01296491A/ja active Pending
-
1989
- 1989-03-18 KR KR1019890003381A patent/KR0132431B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0132431B1 (ko) | 1998-04-11 |
| JPH01296491A (ja) | 1989-11-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20111118 Year of fee payment: 15 |
|
| EXPY | Expiration of term |