DE69030710T2 - Kryogene Leistungshalbleitervorrichtung - Google Patents

Kryogene Leistungshalbleitervorrichtung

Info

Publication number
DE69030710T2
DE69030710T2 DE69030710T DE69030710T DE69030710T2 DE 69030710 T2 DE69030710 T2 DE 69030710T2 DE 69030710 T DE69030710 T DE 69030710T DE 69030710 T DE69030710 T DE 69030710T DE 69030710 T2 DE69030710 T2 DE 69030710T2
Authority
DE
Germany
Prior art keywords
semiconductor device
power semiconductor
cryogenic power
cryogenic
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030710T
Other languages
English (en)
Other versions
DE69030710D1 (de
Inventor
Otward Maria Mueller
Lowell Scott Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE69030710D1 publication Critical patent/DE69030710D1/de
Application granted granted Critical
Publication of DE69030710T2 publication Critical patent/DE69030710T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
    • H01L23/445—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air the fluid being a liquefied gas, e.g. in a cryogenic vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69030710T 1989-10-31 1990-10-25 Kryogene Leistungshalbleitervorrichtung Expired - Fee Related DE69030710T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/429,532 US5126830A (en) 1989-10-31 1989-10-31 Cryogenic semiconductor power devices

Publications (2)

Publication Number Publication Date
DE69030710D1 DE69030710D1 (de) 1997-06-19
DE69030710T2 true DE69030710T2 (de) 1997-12-11

Family

ID=23703655

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030710T Expired - Fee Related DE69030710T2 (de) 1989-10-31 1990-10-25 Kryogene Leistungshalbleitervorrichtung

Country Status (6)

Country Link
US (1) US5126830A (de)
EP (1) EP0426371B1 (de)
JP (1) JPH0671056B2 (de)
CA (1) CA2021606A1 (de)
DE (1) DE69030710T2 (de)
IL (1) IL96051A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323293A (en) * 1992-12-18 1994-06-21 International Business Machines Corporation Arrangement for placing central processors and memory in a cryo cooled chamber
DE4320803C2 (de) * 1993-06-23 2001-06-28 Inst Luft & Kaeltetechnik Ggmbh Lageunabhängiges Sensor-Kühlsystem
DE4332156A1 (de) * 1993-09-22 1995-03-30 Inst Luft Kaeltetech Gem Gmbh Einrichtung zur autarken Kühlung hochtemperatursupraleitender Bauteile, vorzugsweise Sensoren
US5625548A (en) * 1994-08-10 1997-04-29 American Superconductor Corporation Control circuit for cryogenically-cooled power electronics employed in power conversion systems
US6163064A (en) * 1996-08-16 2000-12-19 American Superconductor Corporation Apparatus for improved operation of MOSFET devices in cryogenic environments
US6172550B1 (en) * 1996-08-16 2001-01-09 American Superconducting Corporation Cryogenically-cooled switching circuit
US6798083B2 (en) * 2000-03-15 2004-09-28 Otward M. Mueller Cryogenic power conversion for fuel cell systems especially for vehicles
JP3813098B2 (ja) * 2002-02-14 2006-08-23 三菱電機株式会社 電力用半導体モジュール
US11917794B2 (en) * 2020-10-30 2024-02-27 Advanced Micro Devices, Inc. Separating temperature domains in cooled systems

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL191525C (nl) * 1977-02-02 1995-08-21 Shinkokai Zaidan Hojin Handot Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype.
JPS53127272A (en) * 1977-04-13 1978-11-07 Semiconductor Res Found Electrostatic induction transistor
US4472727A (en) * 1983-08-12 1984-09-18 At&T Bell Laboratories Carrier freezeout field-effect device
JPS62216255A (ja) * 1986-03-17 1987-09-22 Fujitsu Ltd 浸漬沸騰冷却モジユ−ル
JPH0797615B2 (ja) * 1986-08-20 1995-10-18 株式会社東芝 超低温冷却用容器
US4734820A (en) * 1987-04-16 1988-03-29 Ncr Corporation Cryogenic packaging scheme
JPS63289974A (ja) * 1987-05-22 1988-11-28 Hitachi Ltd 低温保冷装置
US4965659A (en) * 1987-06-30 1990-10-23 Sumitomo Electric Industries, Ltd. Member for a semiconductor structure
JPS6439047A (en) * 1987-08-05 1989-02-09 Agency Ind Science Techn Semiconductor device
JP2681288B2 (ja) * 1988-11-02 1997-11-26 富士通株式会社 超伝導素子用パッケージ

Also Published As

Publication number Publication date
IL96051A (en) 1993-08-18
EP0426371B1 (de) 1997-05-14
JPH0671056B2 (ja) 1994-09-07
JPH03184364A (ja) 1991-08-12
DE69030710D1 (de) 1997-06-19
US5126830A (en) 1992-06-30
CA2021606A1 (en) 1991-05-01
IL96051A0 (en) 1991-07-18
EP0426371A1 (de) 1991-05-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee