DE68928312T2 - Leistungshalbleitervorrichtung - Google Patents

Leistungshalbleitervorrichtung

Info

Publication number
DE68928312T2
DE68928312T2 DE68928312T DE68928312T DE68928312T2 DE 68928312 T2 DE68928312 T2 DE 68928312T2 DE 68928312 T DE68928312 T DE 68928312T DE 68928312 T DE68928312 T DE 68928312T DE 68928312 T2 DE68928312 T2 DE 68928312T2
Authority
DE
Germany
Prior art keywords
semiconductor device
power semiconductor
power
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928312T
Other languages
English (en)
Other versions
DE68928312D1 (de
Inventor
Terukazu Ohno
Katutoshi Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE68928312D1 publication Critical patent/DE68928312D1/de
Application granted granted Critical
Publication of DE68928312T2 publication Critical patent/DE68928312T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
DE68928312T 1988-10-12 1989-10-11 Leistungshalbleitervorrichtung Expired - Fee Related DE68928312T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63256851A JPH02102569A (ja) 1988-10-12 1988-10-12 半導体装置

Publications (2)

Publication Number Publication Date
DE68928312D1 DE68928312D1 (de) 1997-10-16
DE68928312T2 true DE68928312T2 (de) 1998-04-16

Family

ID=17298295

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928312T Expired - Fee Related DE68928312T2 (de) 1988-10-12 1989-10-11 Leistungshalbleitervorrichtung

Country Status (5)

Country Link
US (1) US5040043A (de)
EP (1) EP0364393B1 (de)
JP (1) JPH02102569A (de)
KR (1) KR920009752B1 (de)
DE (1) DE68928312T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198379A (en) * 1990-04-27 1993-03-30 Sharp Kabushiki Kaisha Method of making a MOS thin film transistor with self-aligned asymmetrical structure
JP3190057B2 (ja) * 1990-07-02 2001-07-16 株式会社東芝 複合集積回路装置
JP2672184B2 (ja) * 1990-08-27 1997-11-05 シャープ株式会社 半導体装置の製造方法
KR940009357B1 (ko) * 1991-04-09 1994-10-07 삼성전자주식회사 반도체 장치 및 그 제조방법
JP2690412B2 (ja) * 1991-06-11 1997-12-10 ローム株式会社 絶縁層の上に成長層を有する半導体装置の製造方法
JP2785919B2 (ja) * 1991-07-26 1998-08-13 ローム株式会社 絶縁層の上に成長層を有する半導体装置の製造方法
DE4233773C2 (de) * 1992-10-07 1996-09-19 Daimler Benz Ag Halbleiterstruktur für Halbleiterbauelemente mit hoher Durchbruchspannung
JPH06151573A (ja) * 1992-11-06 1994-05-31 Hitachi Ltd 半導体集積回路装置
DE4242669C2 (de) * 1992-12-17 2001-09-13 Hanning Electronic Gmbh & Co Halbleiteranordnung mit einem vertikalen Halbleiterleistungsschalter und einer integrierten Schaltung
US5406096A (en) * 1993-02-22 1995-04-11 Texas Instruments Incorporated Device and method for high performance high voltage operation
JPH0832040A (ja) * 1994-07-14 1996-02-02 Nec Corp 半導体装置
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
US7361534B2 (en) 2005-05-11 2008-04-22 Advanced Micro Devices, Inc. Method for fabricating SOI device
JP2007019170A (ja) * 2005-07-06 2007-01-25 Fuji Electric Holdings Co Ltd 部分ｓｏｉ基板、部分ｓｏｉ基板の製造方法、及び、ｓｏｉ基板
JP4644577B2 (ja) * 2005-09-30 2011-03-02 セイコーエプソン株式会社 半導体装置および半導体装置の製造方法
JP2006310882A (ja) * 2006-06-26 2006-11-09 Toshiba Corp 半導体装置の製造方法
JP4983333B2 (ja) * 2007-03-27 2012-07-25 株式会社デンソー 半導体装置
JP2008091935A (ja) * 2007-11-02 2008-04-17 Seiko Instruments Inc 集積回路
KR102285503B1 (ko) * 2021-04-01 2021-08-02 이한수 모래 주입 장치

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718341B2 (de) * 1974-12-11 1982-04-16
JPS57122561A (en) * 1981-01-22 1982-07-30 Nippon Telegr & Teleph Corp <Ntt> Insulative semiconductor substrate and manufacture thereof
JPS60100469A (ja) * 1983-11-05 1985-06-04 Nissan Motor Co Ltd 半導体装置
JPS60113455A (ja) * 1983-11-24 1985-06-19 Hitachi Ltd 半導体集積回路装置
JPS60225469A (ja) * 1984-04-23 1985-11-09 Toshiba Corp 絶縁基板上ｍｏｓ形電界効果トランジスタ
JPS6146042A (ja) * 1984-08-10 1986-03-06 Nec Corp 半導体装置
JPS6167269A (ja) * 1984-09-07 1986-04-07 Sharp Corp 半導体素子
JPS6167253A (ja) * 1984-09-10 1986-04-07 Sharp Corp 半導体装置
JPH0622276B2 (ja) * 1984-10-18 1994-03-23 日本テキサス・インスツルメンツ株式会社 半導体装置
US4593458A (en) * 1984-11-02 1986-06-10 General Electric Company Fabrication of integrated circuit with complementary, dielectrically-isolated, high voltage semiconductor devices
JPS61137365A (ja) * 1984-12-08 1986-06-25 Semiconductor Res Found 光トリガ・光クエンチ静電誘導サイリスタ
JPS61184862A (ja) * 1985-02-13 1986-08-18 Nec Corp 集積回路
JPS61230333A (ja) * 1985-04-05 1986-10-14 Nec Corp 集積回路
JPH0770686B2 (ja) * 1985-06-19 1995-07-31 日本電信電話株式会社 相補形ｍｉｓ半導体集積回路装置
US4685198A (en) * 1985-07-25 1987-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing isolated semiconductor devices
JPH0680799B2 (ja) * 1985-11-18 1994-10-12 富士通株式会社 相補形ｍｏｓ集積回路
JPS62213272A (ja) * 1986-03-14 1987-09-19 Nissan Motor Co Ltd 半導体装置
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
JP2515745B2 (ja) * 1986-07-14 1996-07-10 株式会社日立製作所 半導体装置の製造方法
JPS63142851A (ja) * 1986-12-05 1988-06-15 Matsushita Electronics Corp 半導体装置
JPS63199454A (ja) * 1987-02-16 1988-08-17 Nec Corp 半導体装置

Also Published As

Publication number Publication date
KR900007114A (ko) 1990-05-09
DE68928312D1 (de) 1997-10-16
KR920009752B1 (ko) 1992-10-22
US5040043A (en) 1991-08-13
EP0364393A2 (de) 1990-04-18
EP0364393B1 (de) 1997-09-10
JPH02102569A (ja) 1990-04-16
EP0364393A3 (de) 1990-06-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee