JPS57122561A - Insulative semiconductor substrate and manufacture thereof - Google Patents
Insulative semiconductor substrate and manufacture thereofInfo
- Publication number
- JPS57122561A JPS57122561A JP56008334A JP833481A JPS57122561A JP S57122561 A JPS57122561 A JP S57122561A JP 56008334 A JP56008334 A JP 56008334A JP 833481 A JP833481 A JP 833481A JP S57122561 A JPS57122561 A JP S57122561A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- semi
- insulating layer
- composition ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 7
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To preferably prepare a C-MOS forming substrate by forming by an ion implantation an insulating layer having stoichoimetric composition ratio to retain a part of a semiconductor on the surface side of the substrate, and injecting a semiconductor forming element in the layer to convert a part into semi-insulating property. CONSTITUTION:O ions 11 are, for example, implanted in an Si substrate 10, and an insulating layer (SiO2)12 which can sufficiently satisfy the stoichiometric composition ratio is buried in the substrate. Then, Si ions 14 are implanted in the layer 12, and the layer 12 is partly converted into a semi-insulating layer 15. At this time the composition ratio of the layer 12 contacted with a semiconductor layer 13 at the surface side is set so as not to be changed. Subsequently, an epitaxial layer is accumulated on the layer 13, and MOSFETs 8, 9 are formed by an ordinary method. The strain of a depletion layer which deteriorates the withstand voltage can be corrected by an electrostatic shielding effect due to the conductivity of the semi-insulating layer to convert the FET into high dielectric strength. Further, since the potential variation of the substrate 10 can be absorbed, the substrate effect is reduced by applying to a complementary element, thereby stabilizing the characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56008334A JPS57122561A (en) | 1981-01-22 | 1981-01-22 | Insulative semiconductor substrate and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56008334A JPS57122561A (en) | 1981-01-22 | 1981-01-22 | Insulative semiconductor substrate and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57122561A true JPS57122561A (en) | 1982-07-30 |
Family
ID=11690287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56008334A Pending JPS57122561A (en) | 1981-01-22 | 1981-01-22 | Insulative semiconductor substrate and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57122561A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4843590A (en) * | 1986-05-29 | 1989-06-27 | Hewlett-Packard Company | History stack |
| EP0364393A2 (en) * | 1988-10-12 | 1990-04-18 | Nippon Telegraph And Telephone Corporation | Power semiconductor device |
-
1981
- 1981-01-22 JP JP56008334A patent/JPS57122561A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4843590A (en) * | 1986-05-29 | 1989-06-27 | Hewlett-Packard Company | History stack |
| EP0364393A2 (en) * | 1988-10-12 | 1990-04-18 | Nippon Telegraph And Telephone Corporation | Power semiconductor device |
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