JPS6482556A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6482556A JPS6482556A JP62238724A JP23872487A JPS6482556A JP S6482556 A JPS6482556 A JP S6482556A JP 62238724 A JP62238724 A JP 62238724A JP 23872487 A JP23872487 A JP 23872487A JP S6482556 A JPS6482556 A JP S6482556A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- analogue
- circuit
- constituted
- analogue circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters
Landscapes
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain a semiconductor device having a largecapacity memory in combination with an analogue circuit and still operable at high speed with low noise, by providing a memory consistuted by a MOS transistor and an analogue circuit within one chip. CONSTITUTION:A semiconductor chip 100 has a memory 10 constituted by a MOST and an analogue circuit 20 constituted by an analogue/digital converting circuit, an operational amplifier etc. Since the memory constituted by the MOST occupies a small area and exhibits low power consumption, the memory of large capacity can be mounted together with the analogue circuit on the same chip. Accordingly, length of interconnection connecting between the memory and the analogue cicuit can be shortened and parasitic capacity of the interconnection is decreased substantially. As a result, a number of interconnections can be decreased and noise caused upon simultaneous change of potential or current can be decreased. ln this manner, a semiconductor device having a large-capacity memory in combination with an analogue circuit and still operable at high speed with low noise can be obtained.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62238724A JP2656504B2 (en) | 1987-09-25 | 1987-09-25 | Semiconductor device |
DE3832456A DE3832456A1 (en) | 1987-09-25 | 1988-09-23 | Semiconductor device with a memory circuit and an analog circuit |
KR1019880012354A KR890005741A (en) | 1987-09-25 | 1988-09-23 | Semiconductor device having memory circuit and analog circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62238724A JP2656504B2 (en) | 1987-09-25 | 1987-09-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6482556A true JPS6482556A (en) | 1989-03-28 |
JP2656504B2 JP2656504B2 (en) | 1997-09-24 |
Family
ID=17034316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62238724A Expired - Fee Related JP2656504B2 (en) | 1987-09-25 | 1987-09-25 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2656504B2 (en) |
KR (1) | KR890005741A (en) |
DE (1) | DE3832456A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05243948A (en) * | 1992-02-27 | 1993-09-21 | Sanyo Electric Co Ltd | Photodetector |
JP2001515238A (en) * | 1997-08-28 | 2001-09-18 | シーメンス アクチエンゲゼルシヤフト | Interface circuit for full custom timing domain and semi-custom timing domain |
WO2012060032A1 (en) * | 2010-11-04 | 2012-05-10 | パナソニック株式会社 | Semiconductor integrated circuit |
CN113140543A (en) * | 2020-01-17 | 2021-07-20 | 爱思开海力士有限公司 | Semiconductor memory device and method of manufacturing the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1357557A1 (en) * | 2002-04-24 | 2003-10-29 | Excellatron Solid State, LLC | Systems and methods for reducing noise in mixed-mode integrated circuits |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57160215U (en) * | 1981-04-01 | 1982-10-07 | ||
JPS6177357A (en) * | 1984-09-25 | 1986-04-19 | Hitachi Ltd | Manufacture of semiconductor memory device and manufacture thereof |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5539073B2 (en) * | 1974-12-25 | 1980-10-08 |
-
1987
- 1987-09-25 JP JP62238724A patent/JP2656504B2/en not_active Expired - Fee Related
-
1988
- 1988-09-23 DE DE3832456A patent/DE3832456A1/en not_active Ceased
- 1988-09-23 KR KR1019880012354A patent/KR890005741A/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57160215U (en) * | 1981-04-01 | 1982-10-07 | ||
JPS6177357A (en) * | 1984-09-25 | 1986-04-19 | Hitachi Ltd | Manufacture of semiconductor memory device and manufacture thereof |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05243948A (en) * | 1992-02-27 | 1993-09-21 | Sanyo Electric Co Ltd | Photodetector |
JP2001515238A (en) * | 1997-08-28 | 2001-09-18 | シーメンス アクチエンゲゼルシヤフト | Interface circuit for full custom timing domain and semi-custom timing domain |
WO2012060032A1 (en) * | 2010-11-04 | 2012-05-10 | パナソニック株式会社 | Semiconductor integrated circuit |
US8791749B2 (en) | 2010-11-04 | 2014-07-29 | Panasonic Corporation | Semicondcutor integrated circuit including power generation block and power supply control block |
CN113140543A (en) * | 2020-01-17 | 2021-07-20 | 爱思开海力士有限公司 | Semiconductor memory device and method of manufacturing the same |
CN113140543B (en) * | 2020-01-17 | 2024-09-03 | 爱思开海力士有限公司 | Semiconductor memory device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
KR890005741A (en) | 1989-05-16 |
JP2656504B2 (en) | 1997-09-24 |
DE3832456A1 (en) | 1989-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |