KR910007146A - T형의 반도체 돌출부를 가지는 mosfet와 그 제조방법 - Google Patents

T형의 반도체 돌출부를 가지는 mosfet와 그 제조방법

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Publication number
KR910007146A
KR910007146A KR1019900015247A KR900015247A KR910007146A KR 910007146 A KR910007146 A KR 910007146A KR 1019900015247 A KR1019900015247 A KR 1019900015247A KR 900015247 A KR900015247 A KR 900015247A KR 910007146 A KR910007146 A KR 910007146A
Authority
KR
South Korea
Prior art keywords
mosfet
manufacturing
type semiconductor
semiconductor protrusion
protrusion
Prior art date
Application number
KR1019900015247A
Other languages
English (en)
Other versions
KR100217495B1 (ko
Inventor
이또 마사히로
Original Assignee
오끼덴끼 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오끼덴끼 고오교 가부시끼가이샤 filed Critical 오끼덴끼 고오교 가부시끼가이샤
Publication of KR910007146A publication Critical patent/KR910007146A/ko
Application granted granted Critical
Publication of KR100217495B1 publication Critical patent/KR100217495B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1019900015247A 1989-09-28 1990-09-26 T형의 반도체 돌출부를 가지는 mosfet와 그 제조방법 KR100217495B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-250779 1989-09-28
JP1250779A JP2804539B2 (ja) 1989-09-28 1989-09-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR910007146A true KR910007146A (ko) 1991-04-30
KR100217495B1 KR100217495B1 (ko) 1999-09-01

Family

ID=17212921

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900015247A KR100217495B1 (ko) 1989-09-28 1990-09-26 T형의 반도체 돌출부를 가지는 mosfet와 그 제조방법

Country Status (3)

Country Link
US (1) US5136350A (ko)
JP (1) JP2804539B2 (ko)
KR (1) KR100217495B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101128244B1 (ko) * 2007-12-12 2012-03-23 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 장치
KR101160104B1 (ko) * 2008-01-29 2012-06-26 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 장치 및 그 제조방법

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214301A (en) * 1991-09-30 1993-05-25 Motorola, Inc. Field effect transistor having control and current electrodes positioned at a planar elevated surface
US5324673A (en) * 1992-11-19 1994-06-28 Motorola, Inc. Method of formation of vertical transistor
US5430315A (en) * 1993-07-22 1995-07-04 Rumennik; Vladimir Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
DE4327132C2 (de) * 1993-08-12 1997-01-23 Siemens Ag Dünnfilmtransistor und Verfahren zu dessen Herstellung
JP3745392B2 (ja) * 1994-05-26 2006-02-15 株式会社ルネサステクノロジ 半導体装置
US5705405A (en) * 1994-09-30 1998-01-06 Sgs-Thomson Microelectronics, Inc. Method of making the film transistor with all-around gate electrode
US5689127A (en) * 1996-03-05 1997-11-18 International Business Machines Corporation Vertical double-gate field effect transistor
US5949700A (en) * 1998-05-26 1999-09-07 International Business Machines Corporation Five square vertical dynamic random access memory cell
US6197641B1 (en) * 1998-08-28 2001-03-06 Lucent Technologies Inc. Process for fabricating vertical transistors
US6518622B1 (en) * 2000-03-20 2003-02-11 Agere Systems Inc. Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture therefor
FR2810792B1 (fr) * 2000-06-22 2003-07-04 Commissariat Energie Atomique Transistor mos vertical a grille enterree et procede de fabrication de celui-ci
US7388258B2 (en) * 2003-12-10 2008-06-17 International Business Machines Corporation Sectional field effect devices
JP4768557B2 (ja) 2006-09-15 2011-09-07 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US8896056B2 (en) 2007-12-05 2014-11-25 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor semiconductor device
US20100187601A1 (en) * 2007-12-12 2010-07-29 Fujio Masuoka Semiconductor device
KR100994710B1 (ko) * 2007-12-21 2010-11-17 주식회사 하이닉스반도체 수직채널트랜지스터의 제조 방법
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP5317343B2 (ja) * 2009-04-28 2013-10-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US8188537B2 (en) 2008-01-29 2012-05-29 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP5087655B2 (ja) 2010-06-15 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9257347B2 (en) * 2012-08-30 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for a field-effect transistor with a raised drain structure
CN104157686B (zh) * 2014-08-11 2017-02-15 北京大学 一种环栅场效应晶体管及其制备方法
CN104201195B (zh) * 2014-08-27 2017-02-15 北京大学 一种无结场效应晶体管及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4625388A (en) * 1982-04-26 1986-12-02 Acrian, Inc. Method of fabricating mesa MOSFET using overhang mask and resulting structure
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
JPS60128654A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路
US4568958A (en) * 1984-01-03 1986-02-04 General Electric Company Inversion-mode insulated-gate gallium arsenide field-effect transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101128244B1 (ko) * 2007-12-12 2012-03-23 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 장치
KR101160104B1 (ko) * 2008-01-29 2012-06-26 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
JP2804539B2 (ja) 1998-09-30
KR100217495B1 (ko) 1999-09-01
US5136350A (en) 1992-08-04
JPH03114233A (ja) 1991-05-15

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