DE69427617D1 - Im Nanometerbereich hergestellte Halbleiteranordnung - Google Patents

Im Nanometerbereich hergestellte Halbleiteranordnung

Info

Publication number
DE69427617D1
DE69427617D1 DE69427617T DE69427617T DE69427617D1 DE 69427617 D1 DE69427617 D1 DE 69427617D1 DE 69427617 T DE69427617 T DE 69427617T DE 69427617 T DE69427617 T DE 69427617T DE 69427617 D1 DE69427617 D1 DE 69427617D1
Authority
DE
Germany
Prior art keywords
semiconductor device
device manufactured
nanometer range
nanometer
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69427617T
Other languages
English (en)
Other versions
DE69427617T2 (de
Inventor
Kensuke Ogawa
Jeremy Allam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Europe Ltd
Original Assignee
Hitachi Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Europe Ltd filed Critical Hitachi Europe Ltd
Application granted granted Critical
Publication of DE69427617D1 publication Critical patent/DE69427617D1/de
Publication of DE69427617T2 publication Critical patent/DE69427617T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69427617T 1993-05-28 1994-04-29 Im Nanometerbereich hergestellte Halbleiteranordnung Expired - Fee Related DE69427617T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB939311111A GB9311111D0 (en) 1993-05-28 1993-05-28 Quantum structure devices

Publications (2)

Publication Number Publication Date
DE69427617D1 true DE69427617D1 (de) 2001-08-09
DE69427617T2 DE69427617T2 (de) 2002-05-08

Family

ID=10736327

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69427617T Expired - Fee Related DE69427617T2 (de) 1993-05-28 1994-04-29 Im Nanometerbereich hergestellte Halbleiteranordnung

Country Status (4)

Country Link
US (1) US5485018A (de)
EP (1) EP0626730B1 (de)
DE (1) DE69427617T2 (de)
GB (1) GB9311111D0 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100199024B1 (ko) * 1995-12-22 1999-06-15 정선종 두개의 비대칭 양자점을 갖는 평면 공명관통 트랜지스터
GB2314674B (en) * 1996-06-27 1998-09-16 Toshiba Cambridge Res Center Optically operable semiconductor device
GB2314673B (en) * 1996-06-27 1998-12-30 Toshiba Cambridge Res Center Semiconductor device
US5939764A (en) * 1997-04-23 1999-08-17 President And Fellows Of Harvard College Direct current voltage transformer
AU7271198A (en) * 1997-05-01 1998-11-24 Trustees Of The Stevens Institute Of Technology, The Method and apparatus for modulation of guided plasmons
US6541803B1 (en) * 2000-04-21 2003-04-01 The United States Of America As Represented By The Secretary Of The Army High-speed high electron mobility transistor photodetector using low temperature gallium arsenide
DE10042663A1 (de) * 2000-08-31 2002-03-14 Deutsche Telekom Ag Eletronenspektrometer
EP1187219A1 (de) * 2000-09-01 2002-03-13 Btg International Limited Ballistische elektronische Bauelemente
TW514968B (en) * 2000-09-01 2002-12-21 Btg Int Ltd Nanoelectronic devices, circuits including such devices and methods for achieving transistor action and rectifying an alternating voltage in such device
US6403990B1 (en) * 2001-03-27 2002-06-11 Agilent Technologies, Inc. Short turn-off time photoconductive switch
GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits
CN102176521B (zh) * 2010-12-08 2013-08-07 南京邮电大学 太赫兹表面等离子体波温度控制开关及其控制方法
KR101421075B1 (ko) * 2011-08-22 2014-07-18 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 정류 장치, 트랜지스터 및 정류 방법
US8907378B2 (en) * 2013-03-15 2014-12-09 Mitsubishi Electric Research Laboratories, Inc. High electron mobility transistor with multiple channels
US9991370B2 (en) * 2014-12-15 2018-06-05 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and systems for ultra-high quality gated hybrid devices and sensors
US11355624B2 (en) * 2019-04-05 2022-06-07 Stmicroelectronics S.R.L. Electrically confined ballistic devices and methods

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138408A (en) * 1988-04-15 1992-08-11 Nec Corporation Resonant tunneling hot carrier transistor
US4825872A (en) * 1988-08-05 1989-05-02 Critikon, Inc. Finger sensor for pulse oximetry system
EP0394757B1 (de) * 1989-04-27 1998-10-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
US5105232A (en) * 1989-09-26 1992-04-14 Massachusetts Institute Of Technology Quantum field-effect directional coupler
DE4020813A1 (de) * 1990-01-23 1991-07-25 Max Planck Gesellschaft Elektronenwellen-gekoppeltes halbleiter-schaltelement
US5051791A (en) * 1990-03-12 1991-09-24 At&T Bell Laboratories Apparatus comprising refractive means for elections
JPH0437069A (ja) * 1990-06-01 1992-02-07 Hitachi Ltd 共鳴トンネリング素子及びそれを用いた可変コンダクタンス回路
JP2973225B2 (ja) * 1990-09-17 1999-11-08 日本電気株式会社 半導体装置およびその製造方法
GB2256313B (en) * 1991-01-04 1995-03-29 Hitachi Europ Ltd Semiconductor device
EP0517647A3 (en) * 1991-06-04 1993-07-21 Fujitsu Limited Quantum semiconductor device that uses a quantum point contact for producing a quantum mechanical carrier wave with directivity
GB2261989B (en) * 1991-11-27 1995-07-12 Hitachi Europ Ltd Switching device
US5283445A (en) * 1991-11-29 1994-02-01 Fujitsu Limited Quantum semiconductor device employing quantum boxes for enabling compact size and high-speed operation
GB9125727D0 (en) * 1991-12-03 1992-01-29 Hitachi Europ Ltd Non-linear optical device
JP2701633B2 (ja) * 1991-12-09 1998-01-21 日本電気株式会社 半導体装置
GB9206149D0 (en) * 1992-03-19 1992-05-06 Hitachi Europ Ltd Charge carrier flow control device

Also Published As

Publication number Publication date
EP0626730A3 (de) 1995-06-21
EP0626730B1 (de) 2001-07-04
DE69427617T2 (de) 2002-05-08
GB9311111D0 (en) 1993-07-14
US5485018A (en) 1996-01-16
EP0626730A2 (de) 1994-11-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee