GB2314674B - Optically operable semiconductor device - Google Patents

Optically operable semiconductor device

Info

Publication number
GB2314674B
GB2314674B GB9613494A GB9613494A GB2314674B GB 2314674 B GB2314674 B GB 2314674B GB 9613494 A GB9613494 A GB 9613494A GB 9613494 A GB9613494 A GB 9613494A GB 2314674 B GB2314674 B GB 2314674B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
operable semiconductor
optically operable
optically
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9613494A
Other versions
GB9613494D0 (en
GB2314674A (en
Inventor
Jeremy Henley Burroughes
Riichi Katoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Toshiba Corp
Original Assignee
Toshiba Cambridge Research Centre Ltd
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd, Toshiba Corp filed Critical Toshiba Cambridge Research Centre Ltd
Priority to GB9613494A priority Critical patent/GB2314674B/en
Publication of GB9613494D0 publication Critical patent/GB9613494D0/en
Priority to JP9023799A priority patent/JPH1022516A/en
Publication of GB2314674A publication Critical patent/GB2314674A/en
Application granted granted Critical
Publication of GB2314674B publication Critical patent/GB2314674B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9613494A 1996-06-27 1996-06-27 Optically operable semiconductor device Expired - Fee Related GB2314674B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9613494A GB2314674B (en) 1996-06-27 1996-06-27 Optically operable semiconductor device
JP9023799A JPH1022516A (en) 1996-06-27 1997-02-06 Optical element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9613494A GB2314674B (en) 1996-06-27 1996-06-27 Optically operable semiconductor device

Publications (3)

Publication Number Publication Date
GB9613494D0 GB9613494D0 (en) 1996-08-28
GB2314674A GB2314674A (en) 1998-01-07
GB2314674B true GB2314674B (en) 1998-09-16

Family

ID=10795989

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9613494A Expired - Fee Related GB2314674B (en) 1996-06-27 1996-06-27 Optically operable semiconductor device

Country Status (2)

Country Link
JP (1) JPH1022516A (en)
GB (1) GB2314674B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633286A (en) * 1984-04-05 1986-12-30 The United States Of America As Represented By The Secretary Of The Army Multiple gap optically activated switch
US5034794A (en) * 1989-05-30 1991-07-23 Mitsbuishi Denki Kabushiki Kaisha Infrared imaging device
US5115335A (en) * 1990-06-29 1992-05-19 The United States Of America As Represented By The Secretary Of The Air Force Electrooptic fabry-perot pixels for phase-dominant spatial light modulators
US5337474A (en) * 1991-05-31 1994-08-16 Fuji Xerox Co., Ltd. Process for fabricating electronic devices and image sensor
EP0626730A2 (en) * 1993-05-28 1994-11-30 Hitachi Europe Limited Nanofabricated semiconductor device
US5459333A (en) * 1993-08-11 1995-10-17 Daimler-Benz Aktiengesellschaft Semiconductor photodetector with potential barrier regions

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633286A (en) * 1984-04-05 1986-12-30 The United States Of America As Represented By The Secretary Of The Army Multiple gap optically activated switch
US5034794A (en) * 1989-05-30 1991-07-23 Mitsbuishi Denki Kabushiki Kaisha Infrared imaging device
US5115335A (en) * 1990-06-29 1992-05-19 The United States Of America As Represented By The Secretary Of The Air Force Electrooptic fabry-perot pixels for phase-dominant spatial light modulators
US5337474A (en) * 1991-05-31 1994-08-16 Fuji Xerox Co., Ltd. Process for fabricating electronic devices and image sensor
EP0626730A2 (en) * 1993-05-28 1994-11-30 Hitachi Europe Limited Nanofabricated semiconductor device
US5459333A (en) * 1993-08-11 1995-10-17 Daimler-Benz Aktiengesellschaft Semiconductor photodetector with potential barrier regions

Also Published As

Publication number Publication date
GB9613494D0 (en) 1996-08-28
GB2314674A (en) 1998-01-07
JPH1022516A (en) 1998-01-23

Similar Documents

Publication Publication Date Title
GB2309336B (en) Semiconductor device
GB2316208B (en) Semiconductor device
EP0951071A4 (en) Semiconductor device
GB2309589B (en) Semiconductor device
GB9616281D0 (en) Optical device
GB2316533B (en) Semiconductor device
SG63690A1 (en) Semiconductor device
GB2310758B (en) Semiconductor device
EP0836226A4 (en) Semiconductor device
GB2323968B (en) Semiconductor device
GB9600947D0 (en) Optical Device
SG54501A1 (en) Semiconductor device
GB9713846D0 (en) Semiconductor device
EP0855719A4 (en) Semiconductor device
GB2332301B (en) Semiconductor device
SG68622A1 (en) Semiconductor device
GB2355585B (en) Semiconductor device
GB2314674B (en) Optically operable semiconductor device
GB2310317B (en) Semiconductor device
EP0855740A4 (en) Semiconductor device
GB2314673B (en) Semiconductor device
GB2355328B (en) Semiconductor device
GB9623445D0 (en) Semiconductor device
GB9609834D0 (en) Semiconductor device
GB9610447D0 (en) Semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100627