JPH1022516A - Optical element - Google Patents
Optical elementInfo
- Publication number
- JPH1022516A JPH1022516A JP9023799A JP2379997A JPH1022516A JP H1022516 A JPH1022516 A JP H1022516A JP 9023799 A JP9023799 A JP 9023799A JP 2379997 A JP2379997 A JP 2379997A JP H1022516 A JPH1022516 A JP H1022516A
- Authority
- JP
- Japan
- Prior art keywords
- optical element
- quantum bar
- potential
- predetermined
- carriers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 23
- 239000000969 carrier Substances 0.000 claims abstract description 24
- 230000001939 inductive effect Effects 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Junction Field-Effect Transistors (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、キャリアを所定領
域内に閉じ込める半導体素子を用いた光学素子に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical element using a semiconductor element for confining carriers in a predetermined area.
【０００２】[0002]
【従来の技術】例えば約１００個の電子で、独立したパ
ドル内にキャリアが捕獲される素子について多くの提案
が行われている。キャリアが、閉じ込め条件に応じて、
古典的又は量子力学的な振る舞いを示すことがあるが、
このようなパドルは通常「量子ドット」又は「量子箱」
と呼ばれる。量子ドットを分離するにはいくつかの方法
がある。一般的には、適当なゲート配置を使用して周辺
領域を空乏化することによって、二次元電子ガス（２Ｄ
ＥＧ）の独立した領域を分離することができる。2. Description of the Related Art Many proposals have been made for devices in which carriers are captured in independent paddles with, for example, about 100 electrons. The carrier, depending on the confinement conditions,
May exhibit classical or quantum mechanical behavior,
Such paddles are usually "quantum dots" or "quantum boxes".
Called. There are several ways to separate quantum dots. Generally, by depleting the peripheral region using a suitable gate arrangement, a two-dimensional electron gas (2D
EG) can be isolated.
【０００３】[0003]
【発明が解決しようとする課題及び課題を解決するため
の手段】本発明は、新規な構造を有する光学素子を提供
することを目的とする。本発明の光学素子は、入射電磁
波（入射光）に応じて１つ又は複数の所定領域内にフリ
ーキャリアが誘起されるような光学動作可能な素子であ
り、これらのフリーキャリアの分布は光学素子の入力部
に印加される電位に影響される。SUMMARY OF THE INVENTION An object of the present invention is to provide an optical element having a novel structure. The optical element of the present invention is an optically operable element in which free carriers are induced in one or a plurality of predetermined regions according to an incident electromagnetic wave (incident light), and the distribution of these free carriers is an optical element. Is affected by the potential applied to the input section of
【０００４】本発明の光学素子は、入射光に応じて第１
の領域と第２の領域とを含む少なくとも１つの所定領域
内にフリーキャリアを誘起する手段と、前記第２の領域
内のキャリアの数とは異なるキャリアの数を前記第１の
領域内に生じさせる入力手段と、前記第１の領域と前記
第２の領域とのキャリア数の差に従って電気的な出力を
生成する出力手段とを備えている。An optical element according to the present invention has a first
Means for inducing free carriers in at least one predetermined region including the first region and the second region, and generating a number of carriers in the first region different from the number of carriers in the second region. And input means for generating an electrical output in accordance with the difference in the number of carriers between the first area and the second area.
【０００５】上記の光学素子において、前記所定領域
は、それぞれが１つの光誘起されたキャリアのグループ
を分離するための第１及び第２の所定領域からなってい
てもよい。これらの所定領域の１つ（第１の所定領域）
の第１の領域と第２の領域とのキャリアの数の差を設定
するために、入力手段を配置することができ、それによ
って、隣接の他方の所定領域（第２の所定領域）の第１
の領域と第２の領域とのキャリアの数の差が生じること
になる。出力手段は、この他方の所定領域の第１の領域
と第２の領域とのキャリアの数の差に応答する。[0005] In the above optical element, the predetermined area may include first and second predetermined areas for separating one photo-induced carrier group. One of these predetermined areas (first predetermined area)
Input means can be arranged to set the difference in the number of carriers between the first and second areas of the first area and the second area, whereby the second predetermined area of the other adjacent predetermined area (second predetermined area) can be arranged. 1
And the second region have a difference in the number of carriers. The output means responds to the difference in the number of carriers between the first area and the second area of the other predetermined area.
【０００６】独立したキャリアのグループを分離する前
記第１及び第２の所定領域は細長い形状であることが好
ましい。そして、それらが互いに平行に配置されている
ことが好ましい。また、下記の実施態様においては、こ
れらの第１及び第２の所定領域のそれぞれは、有限長の
一次元量子細線である。いずれの場合にも、これらの捕
獲キャリアの領域対は「量子バー」であると考えること
ができる。Preferably, the first and second predetermined regions separating the independent carrier groups are elongated. And it is preferable that they are arranged in parallel with each other. In the following embodiments, each of these first and second predetermined regions is a finite-length one-dimensional quantum wire. In each case, these pairs of trapped carriers can be considered to be "quantum bars".
【０００７】所定領域内にフリーキャリアを誘起するた
めの手段は、２ＤＥＧの独立した分離領域からなってい
てもよい。先行技術として、所定の電子ガス閉じ込め領
域を有する素子を製造する数多くの方法が知られてい
る。例えば、独立した層が反対の導電型になるようにド
ーピングされたシリコン、ＧａＡｓ等のヘテロ構造体を
採用することもできる。あるいは、例えばＧａＡｓ／Ａ
ｌＧａＡｓのような、それぞれ異なる禁止帯幅を有する
半導体層を同じ目的で使用することもできる。本発明に
よる光学素子では、所定領域は、フリーキャリアをそれ
らの領域の内部に誘起することができるような光に照射
されるように構成されていることが必要である。[0007] The means for inducing free carriers in the predetermined region may be composed of a 2DEG independent separation region. Numerous methods are known in the prior art for producing devices having a defined electron gas confinement region. For example, a heterostructure such as silicon or GaAs in which the independent layers are doped to have the opposite conductivity type can be employed. Alternatively, for example, GaAs / A
Semiconductor layers having different band gaps, such as lGaAs, can also be used for the same purpose. In the optical element according to the present invention, the predetermined region needs to be configured to be irradiated with light capable of inducing free carriers inside the region.
【０００８】なお、本発明による光学素子は、適当な波
長の光によって動作可能ではあるが、原則的には、紫外
線、近、中、又は遠赤外線波長の範囲で動作可能な素子
に適用可能である。従って、ここで「光」と言う場合に
は、それに応じた解釈を行うものとする。Although the optical element according to the present invention can operate with light of an appropriate wavelength, it can be applied to an element which can operate in the ultraviolet, near, middle or far infrared wavelength range in principle. is there. Therefore, when "light" is used here, an interpretation corresponding to the light is performed.
【０００９】本発明の光学素子は、ウェハのそれぞれの
所定領域だけが光に照射され、残りの領域が光から遮へ
いされるように、それぞれ遮へい手段を備えていること
も好ましい。It is also preferred that the optical element of the present invention is provided with a shielding means so that only a predetermined area of the wafer is irradiated with light and the remaining area is shielded from the light.
【００１０】[0010]
【発明の実施の形態】図面を参照して本発明の実施の形
態を説明する。図１は、本発明による基本素子構造の概
要を示す図である。図１に示すように、本発明の光学素
子の基本素子構造体１は、互いに平行であり、相互に分
離された１対の第１及び第２量子バー３、５からなる。
第１入力端子７が第２量子バー５の第１端１１に隣接し
て配置されており、第２入力端子９が第２量子バー５の
第２端１３に隣接して配置されている。また、第１出力
端子１９が第１量子バー３の第１端１５に隣接して配置
されており、第２出力端子２１が第１量子バー３の第２
端１７に隣接して配置されている。図１の場合には、こ
の基本素子構造体１には光は照射されていないので、量
子バー３、５の中に電荷が誘起されていないので、出力
端子１９、２１にも電荷が誘起されることはない。従っ
て、出力端子から電気信号が出力されない。Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing an outline of a basic element structure according to the present invention. As shown in FIG. 1, the basic element structure 1 of the optical element of the present invention includes a pair of first and second quantum bars 3 and 5 which are parallel to each other and separated from each other.
The first input terminal 7 is arranged adjacent to the first end 11 of the second quantum bar 5, and the second input terminal 9 is arranged adjacent to the second end 13 of the second quantum bar 5. Further, the first output terminal 19 is arranged adjacent to the first end 15 of the first quantum bar 3, and the second output terminal 21 is connected to the second end of the first quantum bar 3.
It is located adjacent end 17. In the case of FIG. 1, since no light is applied to the basic element structure 1, no electric charge is induced in the quantum bars 3 and 5, and electric charges are also induced in the output terminals 19 and 21. Never. Therefore, no electric signal is output from the output terminal.
【００１１】図２は、図１の光学素子に光が照射された
場合の状況を示したものである。光照射により、フリー
キャリアが量子バーの中に誘起される。また、この誘起
されたフリーキャリアは、第１及び第２入力端子７、９
に印加される電位に影響を受ける。第１及び第２入力端
子７、９に印加される電位の電位差が、第１入力端子７
が正になり、第２入力端子９が負になるように、所定の
電位がそれぞれの入力端子７、９に印加される。第１及
び第２入力端子７、９は、各入力端子に印加された電位
に対応するそれとは反対の電荷を関連する第２量子バー
５の第１及び第２端１１、１３に誘起する。従って、第
２量子バー５の第１端１１の電位は相対的に負になり、
第２量子バー５の第２端１３の電位は相対的に正にな
る。この第２量子バー５に誘起された電荷によって、次
に、第１量子バー３に第２量子バー５に誘起された電荷
と反対の電荷が誘起される。従って、第１量子バー３の
第１端１５は相対的に正になり、第１量子バー３の第２
端１７は相対的に負になる。上記のように、第１量子バ
ー３に誘起された電荷は、極性が反対の状態で、第１及
び第２出力端子１９、２１に転送される。第１出力端子
１９は、第１量子バー３の第１端１５の相対的に正の電
荷に対応して、相対的に負になる。同様に、第２出力端
子２１は、第１量子バー３の第２端１７の相対的に負の
電荷に対応して、相対的に正になる。FIG. 2 shows a situation where light is applied to the optical element of FIG. Light irradiation induces free carriers in the quantum bar. Further, the induced free carriers are supplied to the first and second input terminals 7 and 9.
Is affected by the applied potential. The potential difference between the potentials applied to the first and second input terminals 7, 9 is
Becomes positive and the second input terminal 9 becomes negative, a predetermined potential is applied to the respective input terminals 7 and 9. The first and second input terminals 7, 9 induce opposite charges, corresponding to the potential applied to each input terminal, at the first and second ends 11, 13 of the associated second quantum bar 5. Therefore, the potential at the first end 11 of the second quantum bar 5 becomes relatively negative,
The potential at the second end 13 of the second quantum bar 5 becomes relatively positive. Next, the charge induced in the second quantum bar 5 induces a charge in the first quantum bar 3 opposite to the charge induced in the second quantum bar 5. Accordingly, the first end 15 of the first quantum bar 3 is relatively positive, and the second end 15 of the first quantum bar 3 is relatively positive.
End 17 is relatively negative. As described above, the electric charge induced in the first quantum bar 3 is transferred to the first and second output terminals 19 and 21 in a state where the polarities are opposite. The first output terminal 19 becomes relatively negative, corresponding to the relatively positive charge at the first end 15 of the first quantum bar 3. Similarly, the second output terminal 21 becomes relatively positive, corresponding to the relatively negative charge at the second end 17 of the first quantum bar 3.
【００１２】図３は、入力端子が短絡している場合を示
したものである。入力又は出力端子、あるいは量子バー
には、ゼロ実効電荷が保持される。従って、量子バーの
中のフリーキャリアは空乏化することになる。FIG. 3 shows a case where the input terminals are short-circuited. An input or output terminal or a quantum bar holds zero net charge. Therefore, free carriers in the quantum bar are depleted.
【００１３】図４は、図１〜図３に示した素子が光活性
化スイッチとしてどのように動作するのかを示したもの
である。図４において、論理パルス列Ｖdcが入力を表し
ている。出力信号（点線）が素子全域に転送されるの
は、図４に示すように、光パルスが印加された場合に限
られる。しかし、図３に示すように、入力端子を短絡さ
せることによって、クリアランス動作が行われる場合に
は、出力信号は出なくなる。FIG. 4 shows how the device shown in FIGS. 1-3 operates as a light-activated switch. In FIG. 4, a logic pulse train Vdc represents an input. The output signal (dotted line) is transferred to the entire area of the element only when an optical pulse is applied as shown in FIG. However, as shown in FIG. 3, when a clearance operation is performed by short-circuiting the input terminal, no output signal is output.
【００１４】なお、照射によって、基板自体が上記のよ
うな量子バーと同様に導電性になることがあるので、量
子バーだけに光を照射し、他の領域には光が照射されな
いように光を遮へいするような手段を設けることが好ま
しい。Since the substrate itself may become conductive as in the above-described quantum bar by irradiation, light is irradiated only to the quantum bar, and light is irradiated so that light is not irradiated to other regions. It is preferable to provide a means for shielding.
【００１５】さらに、光の照射による本発明の光学素子
の応答時間が、電子を伝導帯に励起させるのに要する時
間によって決められてしまうが、このことは、例えば、
下記の方法によって改善することができる。 （１） イオンインプランテーションなどによって、縮
退した準位を持った細い線を各量子バー３、５の中に含
めると、電子の励起源が供給される。 （２） 量子バーがＧａＡｓ層の中に形成される場合に
は、Ａｓが析出するように、その層を比較的低温で成長
させる。このようにして析出された析出物は低いバイア
ス電圧において効率的な再結合中心の役割を果たす。 本発明は、上記の発明の実施の形態に限定されるもので
はなく、本発明の要旨を変更しない範囲で種々変形して
実施できるのは勿論である。Furthermore, the response time of the optical element of the present invention due to light irradiation is determined by the time required to excite electrons to the conduction band.
It can be improved by the following method. (1) When a thin line having a degenerated level is included in each of the quantum bars 3 and 5 by ion implantation or the like, an electron excitation source is supplied. (2) If quantum bars are formed in the GaAs layer, grow the layer at a relatively low temperature so that As is deposited. The precipitate thus deposited acts as an efficient recombination center at a low bias voltage. The present invention is not limited to the above embodiments of the present invention, and it is needless to say that various modifications can be made without departing from the spirit of the present invention.
【００１６】[0016]
【発明の効果】本発明によれば次のような効果が得られ
る。本発明による光素子は、オン状態における入力電圧
が１Ｖ以下ですみ、なおかつ、定常電流が流れないた
め、きわめて低消費電力の光素子が、提供できる。ま
た、本発明による光素子は、きわめて構成が単純なた
め、小型化が容易であり、従って、集積化が容易であ
る。According to the present invention, the following effects can be obtained. The optical element according to the present invention requires an input voltage of 1 V or less in the ON state and does not allow a steady current to flow, so that an optical element with extremely low power consumption can be provided. Further, the optical device according to the present invention has a very simple structure, so that it can be easily miniaturized, and therefore can be easily integrated.
【図１】 本発明による基本素子構造の概要を示す図。FIG. 1 is a diagram showing an outline of a basic element structure according to the present invention.
【図２】 光に照射された状態で動作中の図１の素子構
造体。FIG. 2 shows the device structure of FIG. 1 operating under light irradiation.
【図３】 入力端子が短絡している場合の図１及び２の
素子構造体。FIG. 3 shows the element structure of FIGS. 1 and 2 when the input terminal is short-circuited.
【図４】 光活性化スイッチとして動作している状態の
図１〜図３に示したような素子の動作を示す図。FIG. 4 is a diagram showing the operation of the device as shown in FIGS. 1 to 3 in a state in which it operates as a light activation switch.
１…基本素子構造体、 ３…第１量子バー ５…第２量子バー ７…第１入力端子 ９…第２入力端子 １１…第２量子バーの第１端 １３…第２量子バーの第２端 １５…第１量子バーの第１端 １７…第１量子バーの第２端 １９…第１出力端子 ２１…第２出力端子 DESCRIPTION OF SYMBOLS 1 ... Basic element structure 3 ... 1st quantum bar 5 ... 2nd quantum bar 7 ... 1st input terminal 9 ... 2nd input terminal 11 ... 1st end of 2nd quantum bar 13 ... 2nd of 2nd quantum bar Terminal 15: First terminal of first quantum bar 17: Second terminal of first quantum bar 19: First output terminal 21: Second output terminal
Claims (4)
領域とを含む少なくとも１つの所定領域内にフリーキャ
リアを誘起する手段と、 前記第２の領域内のキャリアの数とは異なるキャリアの
数を前記第１の領域内に生じさせる入力手段と、 前記第１の領域と前記第２の領域とのキャリア数の差に
従って電気的な出力を生成する出力手段と、を具備する
ことを特徴とする光学素子。1. A means for inducing free carriers in at least one predetermined region including a first region and a second region in response to an incident electromagnetic wave, and the number of carriers in the second region is Input means for generating a different number of carriers in the first area, and output means for generating an electrical output according to a difference in the number of carriers between the first area and the second area. An optical element, characterized in that:
び第２の所定領域を含み、前記第１の所定領域は前記入
力手段に隣接して配置され、前記入力手段によって前記
第１の所定領域内の第１と第２の領域のキャリア数の差
が生じ、第２の所定領域は前記第１の所定領域及び前記
出力手段との間に配置され、キャリアを分離する手段を
有することを特徴とする請求項１記載の光学素子。2. The at least one predetermined area includes a first and a second predetermined area, wherein the first predetermined area is disposed adjacent to the input means, and the first predetermined area is arranged by the input means. A difference in the number of carriers between the first and second regions occurs, wherein the second predetermined region is disposed between the first predetermined region and the output means, and has means for separating carriers. The optical element according to claim 1, wherein
細長い形状であることを特徴とする請求項２記載の光学
素子。3. The optical element according to claim 2, wherein each of the first and second predetermined regions has an elongated shape.
１次元配線であることを特徴とする請求項３記載の光学
素子。4. The optical element according to claim 3, wherein the first and second predetermined regions are one-dimensional wiring having a finite length.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9613494.5 | 1996-06-27 | ||
| GB9613494A GB2314674B (en) | 1996-06-27 | 1996-06-27 | Optically operable semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1022516A true JPH1022516A (en) | 1998-01-23 |
Family
ID=10795989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9023799A Pending JPH1022516A (en) | 1996-06-27 | 1997-02-06 | Optical element |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH1022516A (en) |
| GB (1) | GB2314674B (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4633286A (en) * | 1984-04-05 | 1986-12-30 | The United States Of America As Represented By The Secretary Of The Army | Multiple gap optically activated switch |
| JPH081949B2 (en) * | 1989-05-30 | 1996-01-10 | 三菱電機株式会社 | Infrared imaging device and manufacturing method thereof |
| US5115335A (en) * | 1990-06-29 | 1992-05-19 | The United States Of America As Represented By The Secretary Of The Air Force | Electrooptic fabry-perot pixels for phase-dominant spatial light modulators |
| JP2707871B2 (en) * | 1991-05-31 | 1998-02-04 | 富士ゼロックス株式会社 | Electronic device and manufacturing method thereof |
| GB9311111D0 (en) * | 1993-05-28 | 1993-07-14 | Hitachi Europ Ltd | Quantum structure devices |
| DE4326754A1 (en) * | 1993-08-11 | 1995-02-16 | Daimler Benz Ag | Semiconductor photodetector |
-
1996
- 1996-06-27 GB GB9613494A patent/GB2314674B/en not_active Expired - Fee Related
-
1997
- 1997-02-06 JP JP9023799A patent/JPH1022516A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2314674B (en) | 1998-09-16 |
| GB2314674A (en) | 1998-01-07 |
| GB9613494D0 (en) | 1996-08-28 |
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