DE69427617D1 - Semiconductor device manufactured in the nanometer range - Google Patents
Semiconductor device manufactured in the nanometer rangeInfo
- Publication number
- DE69427617D1 DE69427617D1 DE69427617T DE69427617T DE69427617D1 DE 69427617 D1 DE69427617 D1 DE 69427617D1 DE 69427617 T DE69427617 T DE 69427617T DE 69427617 T DE69427617 T DE 69427617T DE 69427617 D1 DE69427617 D1 DE 69427617D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- device manufactured
- nanometer range
- nanometer
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB939311111A GB9311111D0 (en) | 1993-05-28 | 1993-05-28 | Quantum structure devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69427617D1 true DE69427617D1 (en) | 2001-08-09 |
DE69427617T2 DE69427617T2 (en) | 2002-05-08 |
Family
ID=10736327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69427617T Expired - Fee Related DE69427617T2 (en) | 1993-05-28 | 1994-04-29 | Semiconductor device manufactured in the nanometer range |
Country Status (4)
Country | Link |
---|---|
US (1) | US5485018A (en) |
EP (1) | EP0626730B1 (en) |
DE (1) | DE69427617T2 (en) |
GB (1) | GB9311111D0 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100199024B1 (en) * | 1995-12-22 | 1999-06-15 | 정선종 | Resonant penetrating transistor with two asymmetric quantum dot |
GB2314673B (en) * | 1996-06-27 | 1998-12-30 | Toshiba Cambridge Res Center | Semiconductor device |
GB2314674B (en) * | 1996-06-27 | 1998-09-16 | Toshiba Cambridge Res Center | Optically operable semiconductor device |
US5939764A (en) * | 1997-04-23 | 1999-08-17 | President And Fellows Of Harvard College | Direct current voltage transformer |
WO1998049587A1 (en) * | 1997-05-01 | 1998-11-05 | Trustees Of The Stevens Institute Of Technology | Method and apparatus for modulation of guided plasmons |
US6541803B1 (en) * | 2000-04-21 | 2003-04-01 | The United States Of America As Represented By The Secretary Of The Army | High-speed high electron mobility transistor photodetector using low temperature gallium arsenide |
DE10042663A1 (en) * | 2000-08-31 | 2002-03-14 | Deutsche Telekom Ag | Eletronenspektrometer |
EP1187219A1 (en) * | 2000-09-01 | 2002-03-13 | Btg International Limited | Ballistic electronic devices |
TW514968B (en) * | 2000-09-01 | 2002-12-21 | Btg Int Ltd | Nanoelectronic devices, circuits including such devices and methods for achieving transistor action and rectifying an alternating voltage in such device |
US6403990B1 (en) * | 2001-03-27 | 2002-06-11 | Agilent Technologies, Inc. | Short turn-off time photoconductive switch |
GB0109782D0 (en) * | 2001-04-20 | 2001-06-13 | Btg Int Ltd | Nanoelectronic devices and circuits |
CN102176521B (en) * | 2010-12-08 | 2013-08-07 | 南京邮电大学 | Terahertz surface plasma wave temperature control switch and control method thereof |
KR101421075B1 (en) * | 2011-08-22 | 2014-07-18 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Rectifying device, transistor, and rectifying method |
US8907378B2 (en) * | 2013-03-15 | 2014-12-09 | Mitsubishi Electric Research Laboratories, Inc. | High electron mobility transistor with multiple channels |
US9991370B2 (en) * | 2014-12-15 | 2018-06-05 | The Royal Institution For The Advancement Of Learning/Mcgill University | Methods and systems for ultra-high quality gated hybrid devices and sensors |
US11355624B2 (en) * | 2019-04-05 | 2022-06-07 | Stmicroelectronics S.R.L. | Electrically confined ballistic devices and methods |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5138408A (en) * | 1988-04-15 | 1992-08-11 | Nec Corporation | Resonant tunneling hot carrier transistor |
US4825872A (en) * | 1988-08-05 | 1989-05-02 | Critikon, Inc. | Finger sensor for pulse oximetry system |
EP0394757B1 (en) * | 1989-04-27 | 1998-10-07 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Semiconductor structure with a 2D-charge carrier layer and fabrication method |
US5105232A (en) * | 1989-09-26 | 1992-04-14 | Massachusetts Institute Of Technology | Quantum field-effect directional coupler |
DE4020813A1 (en) * | 1990-01-23 | 1991-07-25 | Max Planck Gesellschaft | ELECTRONIC SHAFT COUPLED SEMICONDUCTOR SWITCHING ELEMENT |
US5051791A (en) * | 1990-03-12 | 1991-09-24 | At&T Bell Laboratories | Apparatus comprising refractive means for elections |
JPH0437069A (en) * | 1990-06-01 | 1992-02-07 | Hitachi Ltd | Resonance tunneling element and variable conductance circuit using same |
JP2973225B2 (en) * | 1990-09-17 | 1999-11-08 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
GB2256313B (en) * | 1991-01-04 | 1995-03-29 | Hitachi Europ Ltd | Semiconductor device |
EP0517647A3 (en) * | 1991-06-04 | 1993-07-21 | Fujitsu Limited | Quantum semiconductor device that uses a quantum point contact for producing a quantum mechanical carrier wave with directivity |
GB2261989B (en) * | 1991-11-27 | 1995-07-12 | Hitachi Europ Ltd | Switching device |
US5283445A (en) * | 1991-11-29 | 1994-02-01 | Fujitsu Limited | Quantum semiconductor device employing quantum boxes for enabling compact size and high-speed operation |
GB9125727D0 (en) * | 1991-12-03 | 1992-01-29 | Hitachi Europ Ltd | Non-linear optical device |
JP2701633B2 (en) * | 1991-12-09 | 1998-01-21 | 日本電気株式会社 | Semiconductor device |
GB9206149D0 (en) * | 1992-03-19 | 1992-05-06 | Hitachi Europ Ltd | Charge carrier flow control device |
-
1993
- 1993-05-28 GB GB939311111A patent/GB9311111D0/en active Pending
-
1994
- 1994-04-29 EP EP94303174A patent/EP0626730B1/en not_active Expired - Lifetime
- 1994-04-29 DE DE69427617T patent/DE69427617T2/en not_active Expired - Fee Related
- 1994-05-27 US US08/250,262 patent/US5485018A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5485018A (en) | 1996-01-16 |
EP0626730B1 (en) | 2001-07-04 |
DE69427617T2 (en) | 2002-05-08 |
EP0626730A2 (en) | 1994-11-30 |
GB9311111D0 (en) | 1993-07-14 |
EP0626730A3 (en) | 1995-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |