JP5048242B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 319
- 239000000758 substrate Substances 0.000 claims description 73
- 239000012535 impurity Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 24
- 230000000630 rising effect Effects 0.000 claims description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 235000004097 Rosa arvensis Nutrition 0.000 claims 1
- 238000005304 joining Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 3
- 229910018520 Al—Si Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
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Description
2 縦型NPNトランジスタ
3 P型の単結晶シリコン基板
4 N型のエピタキシャル層
6 P型の埋込拡散層
7 P型の埋込拡散層
6 P型の埋込拡散層
9 N型の埋込拡散層
Claims (8)
- 一導電型の半導体基板と、
前記半導体基板上に形成された逆導電型のエピタキシャル層と、
前記半導体基板と前記エピタキシャル層とに渡り形成され、コレクタ領域として用いられる一導電型の第1の埋込拡散層と、
前記半導体基板と前記エピタキシャル層とに渡り形成され、前記半導体基板と前記一導電型の第1の埋込拡散層とを接合分離する逆導電型の第1の埋込拡散層と、
前記一導電型の第1の埋込拡散層とその形成領域を重畳させ、少なくとも前記一導電型の第1の埋込拡散層の上面から這い上がる逆導電型の第2の埋込拡散層と、
前記エピタキシャル層表面から形成され、前記逆導電型の第2の埋込拡散層上方に配置されたベース領域として用いられる逆導電型の拡散層と、
前記エピタキシャル層表面から形成され、コレクタ領域として用いられる一導電型の第1の拡散層と、
前記逆導電型の拡散層に形成され、エミッタ領域として用いられる一導電型の第2の拡散層とを有し、
前記一導電型の第1の埋込拡散層は、前記逆導電型の第2の埋込拡散層の周囲にて這い上がり、前記這い上がった領域にて前記一導電型の第1の拡散層と連結することを特徴とする半導体装置。 - 前記逆導電型の第2の埋込拡散層は、前記一導電型の第1の埋込拡散層より内側に形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記一導電型の第1の埋込拡散層の這い上がった領域には、一導電型の第2の埋込拡散層が重畳して形成されていることを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記一導電型の第1の埋込拡散層を構成する不純物はホウ素であり、前記逆導電型の第2の埋込拡散層を構成する不純物はリンであることを特徴とする請求項1に記載の半導体装置。
- 一導電型の半導体基板を準備し、前記半導体基板に逆導電型の第1の埋込拡散層を形成した後、前記逆導電型の第1の埋込拡散層により前記半導体基板と接合分離するように、前記半導体基板に一導電型の第1の埋込拡散層を形成する工程と、
前記半導体基板に対し熱酸化工程を行った後、前記一導電型の第1の埋込拡散層が形成された領域に逆導電型の不純物をイオン注入し、逆導電型の第2の埋込拡散層を形成する工程と、
前記半導体基板上に逆導電型のエピタキシャル層を形成し、前記エピタキシャル層表面からコレクタ領域として用いる一導電型の第1の拡散層と、前記逆導電型の第2の埋込拡散層上方に配置されたベース領域として用いる逆導電型の拡散層と、エミッタ領域として用いる一導電型の第2の拡散層とを形成する工程とを有し、
前記一導電型の第1の埋込拡散層は、前記逆導電型の第2の埋込拡散層の周囲にて這い上がり、前記這い上がった領域にて前記一導電型の第1の拡散層と連結することを特徴とする半導体装置の製造方法。 - 前記半導体基板表面に酸化膜を形成し、前記熱酸化工程を行った後、前記酸化膜を除去することを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記一導電型の第1の埋込拡散層を形成する不純物はホウ素であることを特徴とする請求項5または請求項6に記載の半導体装置の製造方法。
- 前記熱酸化工程と前記逆導電型の第2の埋込拡散層を形成する不純物をイオン注入する工程との間には、非酸化性雰囲気中での熱処理工程を行わないことを特徴とする請求項5に記載の半導体装置の製造方法。
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JP2005345504A JP5048242B2 (ja) | 2005-11-30 | 2005-11-30 | 半導体装置及びその製造方法 |
TW095141088A TWI335671B (en) | 2005-11-30 | 2006-11-07 | Semiconductor device and method for manufacturing thereof |
US11/562,107 US7619299B2 (en) | 2005-11-30 | 2006-11-21 | Semiconductor device and method of manufacturing the same |
KR1020060116219A KR100787287B1 (ko) | 2005-11-30 | 2006-11-23 | 반도체 장치 및 그 제조 방법 |
CNB2006101625424A CN100530683C (zh) | 2005-11-30 | 2006-11-27 | 半导体装置及其制造方法 |
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JP (1) | JP5048242B2 (ja) |
KR (1) | KR100787287B1 (ja) |
CN (1) | CN100530683C (ja) |
TW (1) | TWI335671B (ja) |
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JP2007180472A (ja) * | 2005-11-30 | 2007-07-12 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US7932580B2 (en) * | 2006-12-21 | 2011-04-26 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
US9214457B2 (en) | 2011-09-20 | 2015-12-15 | Alpha & Omega Semiconductor Incorporated | Method of integrating high voltage devices |
JP6070333B2 (ja) * | 2013-03-25 | 2017-02-01 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2020009790A (ja) * | 2016-11-09 | 2020-01-16 | シャープ株式会社 | アバランシェフォトダイオード |
EP4053889A1 (en) * | 2021-03-03 | 2022-09-07 | Nxp B.V. | Isolated wells for improved noise performance |
CN114628498B (zh) * | 2022-05-16 | 2022-08-26 | 绍兴中芯集成电路制造股份有限公司 | 半导体器件 |
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US20070123006A1 (en) | 2007-05-31 |
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JP2007150160A (ja) | 2007-06-14 |
KR20070056957A (ko) | 2007-06-04 |
KR100787287B1 (ko) | 2007-12-20 |
TWI335671B (en) | 2011-01-01 |
CN100530683C (zh) | 2009-08-19 |
US7619299B2 (en) | 2009-11-17 |
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