IT1244239B - Terminazione dello stadio di potenza di un dispositivo monolitico a semicondutture e relativo processo di fabbricazione - Google Patents

Terminazione dello stadio di potenza di un dispositivo monolitico a semicondutture e relativo processo di fabbricazione

Info

Publication number
IT1244239B
IT1244239B IT00661090A IT661090A IT1244239B IT 1244239 B IT1244239 B IT 1244239B IT 00661090 A IT00661090 A IT 00661090A IT 661090 A IT661090 A IT 661090A IT 1244239 B IT1244239 B IT 1244239B
Authority
IT
Italy
Prior art keywords
semiconducture
monolithic
termination
manufacturing process
power stage
Prior art date
Application number
IT00661090A
Other languages
English (en)
Other versions
IT9006610A0 (it
IT9006610A1 (it
Inventor
Raffaele Zambrano
Antonio Grimaldi
Original Assignee
Sgs Thomson Microelectronics
Cons Ric Microelettronica
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics, Cons Ric Microelettronica filed Critical Sgs Thomson Microelectronics
Priority to IT00661090A priority Critical patent/IT1244239B/it
Publication of IT9006610A0 publication Critical patent/IT9006610A0/it
Priority to EP91201245A priority patent/EP0459578B1/en
Priority to DE69124289T priority patent/DE69124289T2/de
Priority to JP3150929A priority patent/JP3002016B2/ja
Priority to US07/706,751 priority patent/US5317182A/en
Publication of IT9006610A1 publication Critical patent/IT9006610A1/it
Application granted granted Critical
Publication of IT1244239B publication Critical patent/IT1244239B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
IT00661090A 1990-05-31 1990-05-31 Terminazione dello stadio di potenza di un dispositivo monolitico a semicondutture e relativo processo di fabbricazione IT1244239B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT00661090A IT1244239B (it) 1990-05-31 1990-05-31 Terminazione dello stadio di potenza di un dispositivo monolitico a semicondutture e relativo processo di fabbricazione
EP91201245A EP0459578B1 (en) 1990-05-31 1991-05-25 A monolithic semiconductor device and associated manufacturing process
DE69124289T DE69124289T2 (de) 1990-05-31 1991-05-25 Monolithische Halbleiteranordnung und entsprechendes Herstellungsverfahren
JP3150929A JP3002016B2 (ja) 1990-05-31 1991-05-28 モノリシック半導体装置の電力段の終末部及び関連する製造過程
US07/706,751 US5317182A (en) 1990-05-31 1991-05-29 Termination of the power stage of a monolithic semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT00661090A IT1244239B (it) 1990-05-31 1990-05-31 Terminazione dello stadio di potenza di un dispositivo monolitico a semicondutture e relativo processo di fabbricazione

Publications (3)

Publication Number Publication Date
IT9006610A0 IT9006610A0 (it) 1990-05-31
IT9006610A1 IT9006610A1 (it) 1991-12-01
IT1244239B true IT1244239B (it) 1994-07-08

Family

ID=11121378

Family Applications (1)

Application Number Title Priority Date Filing Date
IT00661090A IT1244239B (it) 1990-05-31 1990-05-31 Terminazione dello stadio di potenza di un dispositivo monolitico a semicondutture e relativo processo di fabbricazione

Country Status (5)

Country Link
US (1) US5317182A (it)
EP (1) EP0459578B1 (it)
JP (1) JP3002016B2 (it)
DE (1) DE69124289T2 (it)
IT (1) IT1244239B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795597B2 (ja) * 1990-08-18 1995-10-11 三菱電機株式会社 サイリスタおよびその製造方法
EP0646965B1 (en) * 1993-09-17 1999-01-07 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno An integrated device with a bipolar transistor and a MOSFET transistor in an emitter switching configuration
US5777362A (en) * 1995-06-07 1998-07-07 Harris Corporation High efficiency quasi-vertical DMOS in CMOS or BICMOS process
US5629543A (en) * 1995-08-21 1997-05-13 Siliconix Incorporated Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
EP1161767B1 (de) * 1999-03-04 2011-05-18 Infineon Technologies AG Verfahren zur Herstellung einer vertikalen MOS-Transistoranordnung
JP5048242B2 (ja) * 2005-11-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP5739657B2 (ja) * 2010-12-24 2015-06-24 新電元工業株式会社 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480036A1 (fr) * 1980-04-04 1981-10-09 Thomson Csf Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
JPS57162359A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
JPS63198367A (ja) * 1987-02-13 1988-08-17 Toshiba Corp 半導体装置
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
IT1241050B (it) * 1990-04-20 1993-12-29 Cons Ric Microelettronica Processo di formazione di una regione sepolta di drain o di collettore in dispositivi monolitici a semiconduttore.

Also Published As

Publication number Publication date
IT9006610A0 (it) 1990-05-31
JP3002016B2 (ja) 2000-01-24
US5317182A (en) 1994-05-31
EP0459578B1 (en) 1997-01-22
DE69124289D1 (de) 1997-03-06
IT9006610A1 (it) 1991-12-01
EP0459578A2 (en) 1991-12-04
EP0459578A3 (en) 1992-07-08
DE69124289T2 (de) 1997-06-19
JPH0653510A (ja) 1994-02-25

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970530